44,484 research outputs found

    Union Security and the Taft-Hartley Act

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    On the inspiral of Massive Black Holes in gas-rich galaxy mergers

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    We present a study on the dynamics of massive BHs in galaxy mergers, obtained from a series of high-resolution N-Body/SPH simulations. The presence of a gaseous component is essential for the rapid formation of an eccentric (Keplerian) BH binary, that resides at the center of a massive (~10^9 Msun) turbulent nuclear disc. Using physically and/or numerically motivated recipes, we follow the accretion history of the BHs during the merger. The mass of the BHs increases as large central inflows of gas occur inside each galaxy, and their mass ratio varies with time. Given the encountered strong degeneracy between numerical resolution and physical assumptions, we suggest here three possible paths followed by the galaxies and the BHs during a merger in order to fulfill the M-sigma relation : Adjustment, Symbiosis, and BH Dominance. In an extremely high resolution run, we resolved the turbulent gas pattern down to parsec scales, and found that BH feedback is expected to be effective near the end of the merger. We then trace the BH binary orbit down to a scale of 0.1 pc modeling the nuclear disc as an equilibrium Mestel disc composed either of gas, gas and stars, or just stars. Under the action of dynamical friction against the rotating gaseous and/or stellar background the orbit circularizes. When this occurs, each BH is endowed with its own small-size (~0.01 pc) accretion disc comprising a few percent of the BH mass. Double AGN activity is expected to occur on an estimated timescale of ~10 Myrs, comparable to the inspiral time. The double nuclear point--like sources that may appear have typical separations of ~10 pc, and are likely to be embedded in the still ongoing starburst.Comment: 10 pages, 5 figures, Proceedings of the Conference "The Multicoloured Landscape of Compact Objects and their Explosive Origins", Cefalu` 200

    Regulation of T cell expansion by antigen presentation dynamics

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    An essential feature of the adaptive immune system is the proliferation of antigen-specific lymphocytes during an immune reaction to form a large pool of effector cells. This proliferation must be regulated to ensure an effective response to infection while avoiding immunopathology. Recent experiments in mice have demonstrated that the expansion of a specific clone of T cells in response to cognate antigen obeys a striking inverse power law with respect to the initial number of T cells. Here, we show that such a relationship arises naturally from a model in which T cell expansion is limited by decaying levels of presented antigen. The same model also accounts for the observed dependence of T cell expansion on affinity for antigen and on the kinetics of antigen administration. Extending the model to address expansion of multiple T cell clones competing for antigen, we find that higher affinity clones can suppress the proliferation of lower affinity clones, thereby promoting the specificity of the response. Employing the model to derive optimal vaccination protocols, we find that exponentially increasing antigen doses can achieve a nearly optimized response. We thus conclude that the dynamics of presented antigen is a key regulator of both the size and specificity of the adaptive immune response

    Dynamics of structural defects and plasticity: models and numerical implementation for dynamical problems

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    We report the plasticity model with explicit description of kinetics of the material defects (dislocations, grain boundaries). This method becomes especially effective for computation of the dynamical deformation of materials at high strain rates because it allows for a simple accounting of the strain rate effects. The equation system is written out and discussed; its implementation is demonstrated for the problem of the plastic flow localization

    Research accomplished at the Knowledge Based Systems Lab: IDEF3, version 1.0

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    An overview is presented of the foundations and content of the evolving IDEF3 process flow and object state description capture method. This method is currently in beta test. Ongoing efforts in the formulation of formal semantics models for descriptions captured in the outlined form and in the actual application of this method can be expected to cause an evolution in the method language. A language is described for the representation of process and object state centered system description. IDEF3 is a scenario driven process flow modeling methodology created specifically for these types of descriptive activities

    Sequence of phase formation in planar metal-Si reaction couples

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    A correlation is found between the sequence of phase formation in thin-film metal-Si interactions and the bulk equilibrium phase diagram. After formation of the first silicide phase, which generally follows the rule proposed by Walser and Bené, the next phase formed at the interface between the first phase and the remaining element (Si or metal) is the nearest congruently melting compound richer in the unreacted element. If the compounds between the first phase and the remaining element are all noncongruently melting compounds (such as peritectic or peritectoid phases), the next phase formed is that with the smallest temperature difference between the liquidus curve and the peritectic (or peritectoid) point

    Ti and V layers retard interaction between Al films and polycrystalline Si

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    Fine-grained polycrystalline Si (poly Si) in contact with Al films recrystallizes at temperatures well below the Si-Al eutectic (577 °C). We show that this interaction can be deferred or suppressed by placing a buffer layer of Ti or V between the Al film and the poly Si. During annealing, Ti or V form TiAl3 or Val3 at the buffer-layer–Al-film interface, but do not react with the poly Si so that the integrity of the poly Si is preserved as long as some unreacted Ti or V remains. The reaction between the Ti or V layer and the Al film is transport limited ([proportional]t^1/2) and characterized by the diffusion constants 1.5×10^15 exp(–1.8eV/kT) Å^2/sec or 8.4×10^12 exp(–1.7eV/kT) Å^2/sec, respectively
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