LTA structures and materials technology

The state-of-the-art concerning structures and materials technology is reviewed. It is shown that many present materials developments resulting from balloon and aircraft research programs can be applied to new concepts in LTA vehicles. Both buoyant and semi-buoyant vehicles utilize similar approaches to solving structural problems and could involve pressurized non-rigid and unpressurized rigid structures. System designs common to both and vital to structural integrity include much of the past technology as well. Further research is needed in determination of structural loads, especially in future design concepts

Donor behavior in indium-alloyed silicon

The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ~ 10^19 cm^–3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n-type conductivity. When the In was contacted only by quartz freshly etched in HF, the n-type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In

XPS study of the chemical structure of the nickel/silicon interface

The chemical nature of the Ni/Si, Ni/Ni_(2)Si and Si/Ni_(2)Si interfaces have been investigated using x‐ray photoelectron spectroscopy. Peak position, line shapes, and envelope intensities are used to probe the compositional structure of these systems. Two approaches have been employed: one approach examines the advancing planar silicide front by dynamically monitoring the in situ formation of Ni_(2)Si. This has the advantage of allowing examination of a realistic interface which is bounded on either side by an extended solid. The second approach follows the development of the Si/Ni interface using UHV depositions of thin layers of Ni on Si . ^(4)He^+ backscattering is used to follow the progression of the thin film reaction and to provide quantitative information on atomic composition. These experiments demonstrate that the Ni/Ni_(2)Si interface consists of a Ni‐rich silicide transitional phase while the Si/Ni_(2)Si interface shows a transitional structure which is correspondingly Si‐rich. Intensity analysis indicates that these interfacial regions are at least 22 Å wide for α‐Si substrates and 9–14 Å wide for crystalline Si. The as‐deposited Ni/Si interface cannot be described as a unique single‐phase, but rather as a chemically graded transitional region showing a composition which varies from Si‐rich to Ni‐rich silicides

Understanding recent trends in house prices and homeownership: commentary

Housing ; Housing - Prices

Three thousand hour electrical test of an alumina trilayer at 1325 K

Prolonged electrical test of bonded alumina trilayer at 1325 K in vacuum environmen

Commentary on two papers on the affordability of housing for young and poor families

Housing - Finance ; Income

Does location matter?

Wages

Current developments lighter than air systems

Lighter than air aircraft (LTA) developments and research in the United States and other countries are reviewed. The emphasis in the U.S. is on VTOL airships capable of heavy lift, and on long endurance types for coastal maritime patrol. Design concepts include hybrids which combine heavier than air and LTA components and characteristics. Research programs are concentrated on aerodynamics, flight dynamics, and control of hybrid types