Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

We report the characteristics of the strained In0.65Ga0.35As triple quantum well (QW) diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched substrates such as GaAs or Si, by utilizing InP metamorphic buffer layers (MBLs) in conjunction with InAs nanostructure-based dislocation filters. As the lattice-mismatch between the substrate and InP MBL increases, higher threshold current densities and lower slope efficiencies were observed, together with higher temperature sensitivities for the threshold current and slope efficiency. Structural analysis performed by both high-resolution X-ray diffraction (HR-XRD) and transmission electron microscopy indicates graded and/or rougher QW interfaces within the active region grown on the mismatched substrate, which accounts for the observed devices characteristics

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices

Utilizing antiguided structures in VCSEL-based 2-D active photonic lattices enables single-mode operation with larger apertures

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Phase-locked laser arrays revisited

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Semiconductor Laser Arrays Grown by Metalorganic Chemical Vapor Deposition

133 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The metalorganic chemical vapor deposition system (MOCVD) allows for the growth of ultrathin epitaxial layers of III-V semiconductor compounds. This vapor deposition process is well suited for the growth of high performance semiconductor laser structures. Experimental data have been collected on a variety of MOCVD grown laser structures and are presented along with device design criteria.An important objective of this work has been to develop laser structures which can easily be designed to operate at a specified wavelength, and at the same time exhibit low threshold current, efficient operation. Two basic laser structures have been studied for these purposes, the alloy active layer double heterostructure laser and the graded barrier quantum-well laser. The optimization and characterization of these structures are discussed in depth. Very low threshold, high efficiency, high T(,0) laser devices have been obtained with the graded barrier quantum-well structure. In addition, several types of anomalous behavior have been observed in this structure, which do not occur in thicker active layer devices.A large fraction of this work is concerned with the design of laser structures which have desirable and controllable optical mode properties. Data is presented on both gain-guided and index-guided devices. High performance index-guided lasers have been developed using a new complementary self-aligned growth technique. In contrast with conventional self-aligned lasers, the complementary self-aligned laser is easy to fabricate and more versatile from the standpoint of the type of underlying laser structure which can be utilized. Low threshold current index-guided complementary self-aligned lasers have been fabricated using the graded barrier quantum-well active layer. These devices have stabilized fundamental lateral and transverse mode operations, and single longitudinal mode operation under cw conditions, with emission wavelengths ranging from 0.82 (mu)m to 0.695 (mu)m.In order to obtain higher output power levels, while maintaining stabilized optical modes, multiple emitter array structures have been studied. Experimental data on both gain-guided and index-guided array structures are presented.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

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Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

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