Parallel-Coupled Quantum Dots in InAs Nanowires

We use crystal-phase tuning during epitaxial growth of InAs nanowires to create quantum dots with very strong confinement. A set of gate electrodes are used to reproducibly split the quantum dots into even smaller pairs for which we can control the populations down to the last electron. The double quantum dots, which are parallel-coupled to source and drain, show clear and stable odd-even level pairing due to spin degeneracy and the strong confinement. The combination of hard-wall barriers to source and drain, shallow interdot tunnel barriers, and very high single-particle excitation energies allow an order of magnitude tuning of the strength for the first intramolecular bond. We show examples for nanowires with different facet orientations, and suggest possible mechanisms behind the reproducible double-dot formation

Defect characterization studies on 60Co gamma-irradiated p-type Si diodes

Trabajo presentado al 40th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, celebrado del 21 al 24 de junio de 2022 en el CERN (Zurich).Boron-doped silicon devices used in high radiation environment like the HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect is known as the so-called Acceptor Removal Effect and depends on particle type, energy and radiation dose. Here we present defect characterization studies using TSC (thermally stimulated current technique) and DLTS (Deep Level Transient Spectroscopy) to correlate radiation induced changes in the macroscopic device properties with the formation of microscopic defects. The defect spectroscopy techniques provide us information about defect characteristics such as activation energy, capture cross section and defect concentrations, and were performed on 60Co gamma-irradiated B-doped silicon EPI-diodes of different resistivity.Peer reviewe

GEANT4-based calibration of an organic liquid scintillator

A light-yield calibration of an NE 213A organic liquid scintillator detector has been performed using bothmonoenergetic and polyenergetic gamma-ray sources. Scintillation light was detected in a photomultipliertube, and the corresponding pulses were subjected to waveform digitization on an event-by-event basis. Theresulting Compton edges have been analyzed using a GEANT4 simulation of the detector which models boththe interactions of the ionizing radiation as well as the transport of scintillation photons. The simulation is calibrated and also compared to well-established prescriptions used to determine the Compton edges,resulting ultimately in light-yield calibration functions. In the process, the simulation-based method produced information on the gain and intrinsic pulse-height resolution of the detector. It also facilitated a previously inaccessible understanding of the systematic uncertainties associated with the calibration of the scintillation-light yield. The simulation-based method was also compared to well-established numerical prescriptions for locating the Compton edges. Ultimately, the simulation predicted as much as 17% lower light-yield calibrations than the prescriptions. These calibrations indicate that approximately 35% of the scintillation light associated with a given gamma-ray reaches the photocathode. It is remarkable how well two 50 year old prescriptions for calibrating scintillation-light yield in organic scintillators have stood the test of time

Extension of the R&D Programme on Technologies for Future Experiments

we have conceived an extension of the R&D programme covering the period 2024 to 2028, i.e. again a 5-year period, however with 2024 as overlap year. This step was encouraged by the success of the current programme but also by the Europe-wide efforts to launch new Detector R&D collaborations in the framework of the ECFA Detector R&D Roadmap. We propose to continue our R&D programme with the main activities in essentially the same areas. All activities are fully aligned with the ECFA Roadmap and in most cases will be carried out under the umbrella of one of the new DRD collaborations. The program is a mix of natural continuations of the current activities and a couple of very innovative new developments, such as a radiation hard embedded FPGA implemented in an ASIC based on System-on-Chip technology. A special and urgent topic is the fabrication of Al-reinforced super-conducting cables. Such cables are a core ingredient of any new superconducting magnet such as BabyIAXO, PANDA, EIC, ALICE-3 etc. Production volumes are small and demands come in irregular intervals. Industry (world-wide) is no longer able and willing to fabricate such cables. The most effective approach (technically and financially) may be to re-invent the process at CERN, together with interested partners, and offer this service to the community