Characterization of the Nanoporous Template Using Anodic Alumina Method

Porous anodic aluminum oxide (AAO) is deposited on a 5 cm × 5 cm tin-doped indium oxide (ITO)/glass substrate, and the AAO/ITO/glass structure thus formed is used to reduce the amount of unreacted Al inside the AAO template, thereby reducing the transmittance of the AAO/glass structure. The enhancement of transmittance is achieved by modulating the diameter of the pores and varying the applied bias. The proposed AAO can be used at a high applied bias (up to 120 V) to improve the uniformity of the current density. Following pore-widening treatment and posttreatment annealing, the morphologies and transmittance of the AAO/ITO/glass structure were also investigated

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV

Characterization of the Nanoporous Template Using Anodic Alumina Method

Porous anodic aluminum oxide (AAO) is deposited on a 5 cm × 5 cm tin-doped indium oxide (ITO)/glass substrate, and the AAO/ITO/glass structure thus formed is used to reduce the amount of unreacted Al inside the AAO template, thereby reducing the transmittance of the AAO/glass structure. The enhancement of transmittance is achieved by modulating the diameter of the pores and varying the applied bias. The proposed AAO can be used at a high applied bias (up to 120 V) to improve the uniformity of the current density. Following pore-widening treatment and posttreatment annealing, the morphologies and transmittance of the AAO/ITO/glass structure were also investigated

Improvement of Short-Circuit Current Density in p- N

This study confirms that the surface texturation of window layer (Al-Y codoped ZnO) etched by diluted HCl effectively increases conversion efficiency of p-Ni1−xO:Li/n-Si heterojunction solar cells. The results show that the short circuit current density (Jsc ) of cell etched at 10 s increases about 8.5% compared to unetched cell, which also corresponds to the increase of efficient photoelectric conversion in NIR region as shown in external quantum efficiency spectra. It is attributed to the increase of light transmittance of AZOY thin films in the NIR region and the effective light path of the NIR wavelength, which results in increasing of light absorption in the base layer