Etude et caractérisation d'un capteur en silicium amorphe hydrogéné déposé sur circuit intégré pour la détection de particules et de rayonnements

Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor â chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application

High Spatial Resolution of Thin-Film-on-ASIC Particle Detectors

Thin-film-on-ASIC (TFA) detectors are monolithic pixel devices that consist of amorphous silicon detecting diodes directly deposited on readout electronics. This paper presents a characterization of the TFA spatial resolution using the electron-beam-induced current (EBIC) technique, in which pixel pads patterned in microstrips were swept by the beam. We measured the spatial resolution for different configurations and thicknesses of the TFA active layer with different beam energies, currents and sweep speeds. We observed that the generated electron-hole pairs are collected most efficiently when the beam is over the microstrips. This better collection efficiency gives a larger signal than off the strips, and thereby enabled us to distinguish strips as small as 0.6 wide which are spaced by 1.4 gaps. This high spatial resolution was obtained even though microvoids in the amorphous silicon layer—induced by an ASIC morphology as rough as 2 —were observed in the detector cross section, thus demonstrating the potential of the TFA architecture even with non-planar readout electronics

Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures

In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematicallyimproves solar cell efficiency in the case of devices using intrinsic and p-type layers with optimal thickness, this treatment leads to performance degradation for devices with an insufficiently thick (p) layer on the light-incoming side. Our results indicate that this degradation is caused by a diminution of the (i/p)-layer stack hole-selectivity because of light exposure. Degradation is avoided when a sufficiently thick (p) layer is used, or when exposure of the (p) layer to UV light is avoided, as is the case of the rear-junction configuration, commonly used in the industry. Additionally, applying a forward bias current or an infrared light exposure results in an efficiency increase for all investigated solar cells, independently of the (p)-layer thickness, confirming the beneficial influence of recombination on the performance of silicon heterojunction solar cells

Unlinking absorption and haze in thin film silicon solar cells front electrodes

We study the respective influence of haze and free carrier absorption (FCA) of transparent front electrodes on the photogenerated current of micromorph thin film silicon solar cells. To decouple the haze and FCA we develop bi-layer front electrodes: a flat indium tin oxide layer assures conduction and allows us to tune FCA while the haze is adjusted by varying the thickness of a highly transparent rough ZnO layer. We show how a minimum amount of FCA leads only to a few percents absorption for a single light path but to a strong reduction of the cell current in the infrared part of the spectrum. Conversely, a current enhancement is shown with increasing front electrode haze up to a saturation of the current gain. This saturation correlates remarkably well with the haze of the front electrode calculated in silicon. This allows us to clarify the requirements for the front electrodes of micromorph cells

Internal electric field and fill factor of amorphous silicon (a-Si:H) solar cells

The electric field E within the i-layer of hydrogenated amorphous silicon (a-Si:H) solar cells strongly affects the cell performances, and, specifically, the fill factor FF. It governs the drift length Ldrift = μτE which is the crucial parameter limiting charge collection. Ideally, a constant electric field is assumed across the i-layer, whereas in real devices, it is deformed by charged band tail states and dangling bonds. If the i-layer is too thick or has a high density of charged defects, E is deformed and reduced. To determine theoretically the charge states of band tails and dangling bonds, we must know the carrier density profiles within the i-layer. Here, the SunShine program is used to determine carrier generation profiles within i-layers of pincells on TCO-covered glass substrates. A classical model for transport and electron/hole capture is employed to determine charge conditions of band tail states and dangling bonds. Results are: (a) charged dangling bonds are predominant for the electric field deformation, affecting the output performance of the cell; (b) this effect is very pronounced especially in degraded cells; (c) it is independent of light intensity; (d) it accounts for performance breakdown of thick, degraded a-Si:H cells. Calculated results are confronted with experimental observations (measurements of FF, collection voltage Vcoll and external quantum efficiency EQE) on pin-type solar cells of 100, 200, 300, and 400 nm thickness produced at IMT Neuchâtel, in initial and degraded state. Ldrift is evaluated via Vcoll, determined here with the method of variable intensity measurements (VIM). Trends observed are explained to full satisfaction

Micro-Channel Plate Detectors Based on Hydrogenated Amorphous Silicon

A new type of micro-channel plate detector based on hydrogenated amorphous silicon is proposed which overcomes the fabrication and performance issues of glass or bulk silicon ones. This new type of detectors consists in 80-100 μm thick layers of amorphous silicon which are micro-machined by deep reactive ion etching to form the channels. This paper focuses on the structure and fabrication process and presents first results obtained with test devices on electron detection which demonstrate amplification effects. Fabrication and performance issues are also discussed

Charge collection in amorphous silicon solar cells: Cell analysis and simulation of high-efficiency pin devices

The drift length Ldrift=μτE within the i layer of a-Si:H solar cells is a crucial parameter for charge collection and efficiency. It is strongly reduced not only by light-induced reduction of μτ, but also by electric field deformation ΔE by charges near the p–i and i–n interfaces. Here, a simple model is presented to estimate contributions of free carriers, charges trapped in band tails and charged dangling bonds to ΔE. It is shown that the model reproduces correctly trends observed experimentally and by ASA simulations: charged dangling bonds contribute most to ΔE of meta-stable cells. Electrons trapped in the conduction band tail near the i–n interface lead to the strongest field deformation in the initial state, while positively charged dangling bonds near the p–i interface get more important with degradation under AM1.5g spectrum. The measurable parameter Vcoll is proposed as an indirect parameter to estimate the electric field, and an experimental technique is presented that could enable the distinction of defects near the p–i and the i–n interfaces

Reassessment of cell to module gains and losses: Accounting for the current boost specific to cells located on the edges

The power produced by a photovoltaic module is not simply the sum of the powers of its constituents cells. The difference stems from a number of so-called “cell-to-module” (CTM) gain or loss mechanisms. These are getting more and more attention as improvements in cell efficiency are becoming harder to achieve. This work focuses on two CTM mechanisms: the gain due to the recapture of light hitting the apparent backsheet in the “empty” spaces around the cells and the loss from the serial connection of “mismatched” cells i.e. with different maximum power points. In general, for insulation purposes, the spaces on the edges of modules are larger than the spacing between cells. This study reveals that, when reflective backsheets are used, these “edge spaces” provide an additional current boost to the cells placed at the edges that can lead to a 0.5% gain in the output power of modules (with 60 or 72 cells). This location-dependent current boost adds to the usual variations in cell characteristics dictated by the binning size and results in larger “cell-to-cell mismatch losses”. However, the simulations reveal that for short-circuit current bin size smaller than 5%, this additional mismatch loss is lower than 0.05%. All considered, this study demonstrates that the spaces at the edges of PV modules have a significant impact on the cell to module ratios (≈+0.5%abs or ≈16% of the CTM gains) when reflective backsheets are used