Ultrafast Chemistry under Nonequilibrium Conditions and the Shock to Deflagration Transition at the Nanoscale

We use molecular dynamics simulations to describe the chemical reactions following shock-induced collapse of cylindrical pores in the high-energy density material RDX. For shocks with particle velocities of 2 km/s we find that the collapse of a 40 nm diameter pore leads to a deflagration wave. Molecular collisions during the collapse lead to ultrafast, multistep chemical reactions that occur under nonequilibrium conditions. Exothermic products formed during these first few picoseconds prevent the nanoscale hotspot from quenching. Within 30 ps, a local deflagration wave develops; it propagates at 0.25 km/s and consists of an ultrathin reaction zone of only ∼5 nm, thus involving large temperature and composition gradients. Contrary to the assumptions in current models, a static thermal hotspot matching the dynamical one in size and thermodynamic conditions fails to produce a deflagration wave indicating the importance of nonequilibrium loading in the criticality of nanoscale hot spots. These results provide insight into the initiation of reactive decomposition

Configurational-Bias Monte Carlo Back-Mapping Algorithm for Efficient and Rapid Conversion of Coarse-Grained Water Structures into Atomistic Models

Coarse-grained molecular dynamics (MD) simulations represent a powerful approach to simulate longer time scale and larger length scale phenomena than those accessible to all-atom models. The gain in efficiency, however, comes at the cost of atomistic details. The reverse transformation, also known as back mapping, of coarse-grained beads into their atomistic constituents represents a major challenge. Most existing approaches are limited to specific molecules or specific force fields and often rely on running a long-time atomistic MD of the back-mapped configuration to arrive at an optimal solution. Such approaches are problematic when dealing with systems with high diffusion barriers. Here, we introduce a new extension of the configurational-bias Monte Carlo (CBMC) algorithm, which we term the crystalline-configurational-bias Monte Carlo (C-CBMC) algorithm, which allows rapid and efficient conversion of a coarse-grained model back into its atomistic representation. Although the method is generic, we use a coarse-grained water model as a representative example and demonstrate the back mapping or reverse transformation for model systems ranging from the ice–liquid water interface to amorphous and crystalline ice configurations. A series of simulations using the TIP4P/Ice model are performed to compare the new CBMC method to several other standard Monte Carlo and molecular dynamics-based back-mapping techniques. In all of the cases, the C-CBMC algorithm is able to find optimal hydrogen-bonded configuration many thousand evaluations/steps sooner than the other methods compared within this paper. For crystalline ice structures, such as a hexagonal, cubic, and cubic-hexagonal stacking disorder structures, the C-CBMC was able to find structures that were between 0.05 and 0.1 eV/water molecule lower in energy than the ground-state energies predicted by the other methods. Detailed analysis of the atomistic structures shows a significantly better global hydrogen positioning when contrasted with the existing simpler back-mapping methods. The errors in the radial distribution functions (RDFs) of back-mapped configuration relative to reference configuration for the C-CBMC, MD, and MC were found to be 6.9, 8.7, and 12.9, respectively, for the hexagonal system. For the cubic system, the relative errors of the RDFs for the C-CBMC, MD, and MC were found to be 18.2, 34.6, and 39.0, respectively. Our results demonstrate the efficiency and efficacy of our new back-mapping approach, especially for crystalline systems where simple force-field-based relaxations have a tendency to get trapped in local minima

Exothermic Self-Sustained Waves with Amorphous Nickel

The synthesis of amorphous Ni (a-Ni) using a liquid-phase chemical reduction approach is reported. Detailed structural analysis indicates that this method allows for efficient fabrication of high surface area (210 m²/g) amorphous Ni nanopowder with low impurity content. We investigated the self-propagating exothermic waves associated with crystallization of Ni from the amorphous precursor. Time-resolved X-ray diffraction indicates that amorphous nickel crystallizes in the temperature range 445–480 K. High-speed infrared imaging reveals that local preheating of compressed a-Ni nanopowder triggers a self-sustaining crystallization wave that propagates with velocity ∼0.3 mm/s. The maximum temperature of crystallization wave depends on the sample density and can be as high as 600 K. The Kissinger approach is used to determine the apparent activation energy (55.4 ± 4 kJ/mol) of crystallization. The self-diffusion activation energy of Ni atoms in a-Ni is ∼60 kJ/mol, determined through molecular dynamics (MD) simulations. This agreement of experimentally derived and theoretically calculated activation energies allows us to conclude that self-diffusion of Ni atoms is the rate-limiting stage for crystallization. Furthermore, utilization of amorphous metal as a reactant significantly increases the rate of solid-state reactions. For example, in reactive intermetallic forming systems, such as Ni + Al, the self-sustaining reaction propagation velocity with a-Ni is twice higher than with crystalline Ni of the same morphology. Additionally, using a-Ni increases the maximum reaction temperature in the Ni + Al system by 300 K

<i>Ab Initio</i>-Based Bond Order Potential to Investigate Low Thermal Conductivity of Stanene Nanostructures

We introduce a bond order potential (BOP) for stanene based on an <i>ab initio</i> derived training data set. The potential is optimized to accurately describe the energetics, as well as thermal and mechanical properties of a free-standing sheet, and used to study diverse nanostructures of stanene, including tubes and ribbons. As a representative case study, using the potential, we perform molecular dynamics simulations to study stanene’s structure and temperature-dependent thermal conductivity. We find that the structure of stanene is highly rippled, far in excess of other 2-D materials (e.g., graphene), owing to its low in-plane stiffness (stanene: ∼ 25 N/m; graphene: ∼ 480 N/m). The extent of stanene’s rippling also shows stronger temperature dependence compared to that in graphene. Furthermore, we find that stanene based nanostructures have significantly lower thermal conductivity compared to graphene based structures owing to their softness (i.e., low phonon group velocities) and high anharmonic response. Our newly developed BOP will facilitate the exploration of stanene based low dimensional heterostructures for thermoelectric and thermal management applications

Three-dimensional Hard X-ray Ptychographic Reflectometry Imaging on Extended Mesoscopic Surface Structures

Many nano and quantum devices, with their sizes often spanning from millimeters down to sub-nanometer, have intricate low-dimensional, non-uniform, or hierarchical structures on surfaces and interfaces. Since their functionalities are dependent on these structures, high-resolution surface-sensitive characterization becomes imperative to gain a comprehensive understanding of the function-structure relationship. We thus developed hard X-ray ptychographic reflectometry imaging, a new technique that merges the high-resolution two-dimensional imaging capabilities of hard X-ray ptychography for extended objects, with the high-resolution depth profiling capabilities of X-ray reflectivity for layered structures. The synergy of these two methods fully leverages both amplitude and phase information from ptychography reconstruction to not only reveal surface topography and localized structures such as shapes and electron densities, but also yields statistical details such as interfacial roughness that is not readily accessible through coherent imaging solely. The hard X-ray ptychographic reflectometry imaging is well-suited for three-dimensional imaging of mesoscopic samples, particularly those comprising planar or layered nanostructures on opaque supports, and could also offer a high-resolution surface metrology and defect analysis on semiconductor devices such as integrated nanocircuits and lithographic photomasks for microchip fabrications

Defect Dynamics in 2‑D MoS₂ Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy

Structural defects govern various physical, chemical, and optoelectronic properties of two-dimensional transition-metal dichalcogenides (TMDs). A fundamental understanding of the spatial distribution and dynamics of defects in these low-dimensional systems is critical for advances in nanotechnology. However, such understanding has remained elusive primarily due to the inaccessibility of (a) necessary time scales <i>via</i> standard atomistic simulations and (b) required spatiotemporal resolution in experiments. Here, we take advantage of supervised machine learning, <i>in situ</i> high-resolution transmission electron microscopy (HRTEM) and molecular dynamics (MD) simulations to overcome these limitations. We combine genetic algorithms (GA) with MD to investigate the extended structure of point defects, their dynamical evolution, and their role in inducing the phase transition between the semiconducting (2H) and metallic (1T) phase in monolayer MoS₂. GA-based structural optimization is used to identify the long-range structure of randomly distributed point defects (sulfur vacancies) for various defect densities. Regardless of the density, we find that organization of sulfur vacancies into extended lines is the most energetically favorable. HRTEM validates these findings and suggests a phase transformation from the 2H-to-1T phase that is localized near these extended defects when exposed to high electron beam doses. MD simulations elucidate the molecular mechanism driving the onset of the 2H to 1T transformation and indicate that finite amounts of 1T phase can be retained by increasing the defect concentration and temperature. This work significantly advances the current understanding of defect structure/evolution and structural transitions in 2D TMDs, which is crucial for designing nanoscale devices with desired functionality

Three-Dimensional Integrated X‑ray Diffraction Imaging of a Native Strain in Multi-Layered WSe₂

Emerging two-dimensional (2-D) materials such as transition-metal dichalcogenides show great promise as viable alternatives for semiconductor and optoelectronic devices that progress beyond silicon. Performance variability, reliability, and stochasticity in the measured transport properties represent some of the major challenges in such devices. Native strain arising from interfacial effects due to the presence of a substrate is believed to be a major contributing factor. A full three-dimensional (3-D) mapping of such native nanoscopic strain over micron length scales is highly desirable for gaining a fundamental understanding of interfacial effects but has largely remained elusive. Here, we employ coherent X-ray diffraction imaging to directly image and visualize in 3-D the native strain along the (002) direction in a typical multilayered (∼100–350 layers) 2-D dichalcogenide material (WSe₂) on silicon substrate. We observe significant localized strains of ∼0.2% along the out-of-plane direction. Experimentally informed continuum models built from X-ray reconstructions trace the origin of these strains to localized nonuniform contact with the substrate (accentuated by nanometer scale asperities, i.e., surface roughness or contaminants); the mechanically exfoliated stresses and strains are localized to the contact region with the maximum strain near surface asperities being more or less independent of the number of layers. Machine-learned multimillion atomistic models show that the strain effects gain in prominence as we approach a few- to single-monolayer limit. First-principles calculations show a significant band gap shift of up to 125 meV per percent of strain. Finally, we measure the performance of multiple WSe₂ transistors fabricated on the same flake; a significant variability in threshold voltage and the “off” current setting is observed among the various devices, which is attributed in part to substrate-induced localized strain. Our integrated approach has broad implications for the direct imaging and quantification of interfacial effects in devices based on layered materials or heterostructures

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal–semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. In this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor–metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplay of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions

Ultrafast Three-Dimensional Integrated Imaging of Strain in Core/Shell Semiconductor/Metal Nanostructures

Visualizing the dynamical response of material heterointerfaces is increasingly important for the design of hybrid materials and structures with tailored properties for use in functional devices. In situ characterization of nanoscale heterointerfaces such as metal–semiconductor interfaces, which exhibit a complex interplay between lattice strain, electric potential, and heat transport at subnanosecond time scales, is particularly challenging. In this work, we use a laser pump/X-ray probe form of Bragg coherent diffraction imaging (BCDI) to visualize in three-dimension the deformation of the core of a model core/shell semiconductor–metal (ZnO/Ni) nanorod following laser heating of the shell. We observe a rich interplay of radial, axial, and shear deformation modes acting at different time scales that are induced by the strain from the Ni shell. We construct experimentally informed models by directly importing the reconstructed crystal from the ultrafast experiment into a thermo-electromechanical continuum model. The model elucidates the origin of the deformation modes observed experimentally. Our integrated imaging approach represents an invaluable tool to probe strain dynamics across mixed interfaces under operando conditions

Quantitative Observation of Threshold Defect Behavior in Memristive Devices with <i>Operando</i> X‑ray Microscopy

Memristive devices are an emerging technology that enables both rich interdisciplinary science and novel device functionalities, such as nonvolatile memories and nanoionics-based synaptic electronics. Recent work has shown that the reproducibility and variability of the devices depend sensitively on the defect structures created during electroforming as well as their continued evolution under dynamic electric fields. However, a fundamental principle guiding the material design of defect structures is still lacking due to the difficulty in understanding dynamic defect behavior under different resistance states. Here, we unravel the existence of threshold behavior by studying model, single-crystal devices: resistive switching requires that the pristine oxygen vacancy concentration reside near a critical value. Theoretical calculations show that the threshold oxygen vacancy concentration lies at the boundary for both electronic and atomic phase transitions. Through <i>operando</i>, multimodal X-ray imaging, we show that field tuning of the local oxygen vacancy concentration below or above the threshold value is responsible for switching between different electrical states. These results provide a general strategy for designing functional defect structures around threshold concentrations to create dynamic, field-controlled phases for memristive devices