Electronic transport in a two-dimensional superlattice engineered via self-assembled nanostructures

Nanoscience offers a unique opportunity to design modern materials from the bottom up, via low-cost, solution processed assembly of nanoscale building blocks. These systems promise electronic band structure engineering using not only the nanoscale structural modulation, but also the mesoscale spatial patterning, although experimental realization of the latter has been challenging. Here we design and fabricate a new type of artificial solid by stacking graphene on a self-assembled, nearly periodic array of nanospheres, and experimentally observe superlattice miniband effects. We find conductance dips at commensurate fillings of charge carriers per superlattice unit cell, which are key features of minibands that are induced by the quasi-periodic deformation of the graphene lattice. These dips become stronger when the lattice strain is larger. Using a tight-binding model, we simulate the effect of lattice deformation as a parameter affecting the inter-atomic hopping integral, and confirm the superlattice transport behavior. This 2D material-nanoparticle heterostructure enables facile band structure engineering via self-assembly, promising for large area electronics and optoelectronics applications

Fate of global superconductivity in arrays of long SNS junctions

Normal-metal films overlaid with arrays of superconducting islands undergo Berezinskii-Kosterlitz-Thouless (BKT) superconducting transitions at a temperature $T_{BKT}$. We present measurements of T$_{BKT}$ for arrays of mesoscopic Nb islands patterned on Au films for a range of island spacings $d$. We show that $T_{BKT} \sim 1/d^2$, and explain this dependence in terms of the quasiclassical prediction that the Thouless energy, rather than the superconducting gap, governs the inter-island coupling. We also find two deviations from the quasiclassical theory: (i) $T_{BKT}$ is sensitive to island height, because the islands are mesoscopic; and (ii) for widely spaced islands the transition appears to lead, not to a superconducting state, but to a finite-resistance "metallic" one.Comment: 12 pages, 4 figure

Single Gate P-N Junctions in Graphene-Ferroelectric Devices

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr$_{0.2}$Ti$_{0.8}$O$_3$ substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an `on-demand' p-n junction in graphene controlled by a single, universal backgate