Study of the characteristics of photoresistors based on hydrochemically deposited films of Pb0.902Sn0.098Se solid solution

Experimental samples of photoresistors based on a Pb0. 902Sn0. 098Se-solid solution semiconductor films obtained by the layer-by-layer deposition of individual selenides of lead and tin(II) with subsequent thermal activation are developed. The structure and morphology of the thin-film compositions (SnSe-PbSe)2 are studied. The temperature dependences of the dark resistance, signal, noise and its ratio, as well as the frequency and spectral characteristics of photoresistors fabricated on the basis of Pb0. 902Sn0. 098Se films in the range of 205-300 K are studied. The optimal bias voltages are determined. It is shown that the location of the maximum and the right boundary of the photoresponse for Pb0. 902Sn0. 098Se-based photoresistors is shifted, in comparison with PbSe, toward the long-wavelength region by 0. 7 μm. The maximal detectivity of the studied photoresistors (2. 0 × 2. 0 mm) obtained at 230 K was 9 × 109 cm W-1 Hz1/2. The advantages of using the Pb0. 902Sn0. 098Se-based photoresistors in the spectral range of 3. 0-5. 5 μm compared with PbSe-based ones are shown. © 2013 Pleiades Publishing, Ltd

Mechanism of PbSe y S1 - Y film formation in chemical deposition from aqueous solutions

The growth mechanism of PbSe y S1 - y films has been studied upon chemical deposition from aqueous solutions using scanning probe microscopy. A comparative morphological analysis of layers deposited at the initial growth stages and the use of fractal formalism shows that the formation of films of PbS, PbSe, and PbSe y S1 - y substitutional solid solutions involves cluster-cluster aggregation with self-organization elements. © 2013 Pleiades Publishing, Ltd

Thermosensitization of nanostructured PbSe films

The mode and conditions of thermal sensitization in the temperature range 648-698K lead selenide films deposited from ethylendiamine acetate system were determined. The effect of heat treatment on the morphology and properties of photosensitive chemically deposited films of PbSe was showed. It is concluded that the results obtained by hydrochemical synthesis of nanostructed highly sensitive to infrared range radiation layer of lead selenide provide performance on the level of best foreign analogues

Synthesis of Roxbyite Cu58S32 Thin Solid Films

This work was supported by the Government of the Russian Federation (program 211, project # 02.A03.21.0006) and by the state assignment for the Institute of Solid State Chemistry UB RAS

HfO2-Based Films Preparation by Chemical Solution Deposition

The work was partially supported financially by Program 211 of the Government of the Russian Federation (№ 02.A03.21.0006)

Effect oF Ligand's Nature on Chemical Deposition by Sodium Sulphate of Sodium thin CdSe Films

The work was financially supported by program 211 of the Government of the Russian Federation (No. 02.A03.21.0006.

Influence of Anion Nucleophilicity on Thiourea Decomposition at the Bath Chemical Deposition of PbS AND CdxPb1-xS Films

The work was financially supported by grant No 18-29-11051 and program 211 of the Government of the Russian Federation (No. 02.A03.21.0006)

Annealing effect on temperature stability and mechanical stress at the “CdxPb1−xS film – substrate” interface

The article establishes the upper temperature steadiness limit of СdxPb1-xS supersaturated solid solutions obtained by chemical bath deposition. СdxPb1-xS (x = 0.06; 0.122; 0.176) and (x = 0.02–0.05) films remained stable under the heating up to 405–410 and 450 K, respectively. SEM studies have shown that heating of СdxPb1-xS films (x = 0.02–0.05) to 620 K leads to the structure destruction. Internal mechanical compressive stresses at the "СdxPb1-xS film-substrate" interface was calculated in the range of 300–900 K for the first time ever, the highest values reached 2000–2750 kN/m2 for a number of the films compositions. In contrast to solid solutions, the expansion stresses up to 100 kN/m2 were derived for the CdS layer at 900 K. The obtained temperature steadiness boundaries and the mechanical stresses of СdxPb1-xS films must be taken into account in the development of photonic devices based on such materials