8 research outputs found

    Erratum: Measurement of the t(t)over-bar production cross section in the dilepton channel in pp collisions at root s = 8 TeV (vol 2, 024, 2014)

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    A NEW CHALCOGENIDE PHOTOCONDUCTOR FOR A DIODE LASER BEAM PRINTER

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    A highly sensitive photoconductive layer with low dark decay has been fabricated for electrophotography using Se-As-Te amorphous chalcogenide. This photoconductor consists of four layers : a Se-rich blocking layer, a Te-rich ir-sensitive layer, an As-rich space-charge layer and a Se-rich voltage-sustaining layer. It has a sensitivity to beams having a wavelength of 750 nm almost as high as that of pure Se at a wavelength of 442 nm
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