Coherent phonons in Bi

Using the electro-optic detection method we have detected coherent phonons of Eg1, Eu1, Eg2, and A1g1 symmetry generated in a crystalline film of Bi2Se3 by a powerful single-cycle THz pulse. Coherent excitation of Raman active modes is interpreted as a result of three-and four-phonon interactions in the anharmonic crystal lattice of Bi2Se3

Coherent phonons in Bi2Se3 induced by a powerful THz pulse

Using the electro-optic detection method we have detected coherent phonons of Eg1, Eu1, Eg2, and A1g1 symmetry generated in a crystalline film of Bi2Se3 by a powerful single-cycle THz pulse. Coherent excitation of Raman active modes is interpreted as a result of three-and four-phonon interactions in the anharmonic crystal lattice of Bi2Se3

Effect of Sr Doping on Structural and Transport Properties of Bi2Te3

Search for doped superconducting topological insulators is of prime importance for new quantum technologies. We report on fabrication of Sr-doped Bi2Te3 single crystals. We found that Bridgman grown samples have p-type conductivity in the low 1019 cm−3, high mobility of 4000 cm2V−1s−1, crystal structure independent on nominal dopant content, and no signs of superconductivity. We also studied molecular beam epitaxy grown SrxBi2−xTe3 films on lattice matched (1 1 1) BaF2 polar surface. Contrary to the bulk crystals thin films have n-type conductivity. Carrier concentration, mobility and c-lattice constant demonstrate pronounced dependence on Sr concentration x. Variation of the parameters did not lead to superconductivity. We revealed, that transport and structural parameters are governed by Sr dopants incorporation in randomly inserted Bi bilayers into the parent matrix. Thus, our data shed light on the structural position of dopant in Bi2Te3 and should be helpful for further design of topological insulator-based superconductors

Polarization-Sensitive Nonlinear Optical Interaction of Ultrashort Laser Pulses with HPHT Diamond

The filamentation of focused 300 fs laser pulses with variable polarization azimuth in bulk of synthetic HPHT diamond demonstrates the possibility of polarization-dependent bandgap control for crystal dielectric photoexcitation. This directly affects the value of the filamentation threshold power, which exhibits the distinct dependence on the polarization azimuth angle. The nonlinear photoluminescence yield, when focusing ultrashort laser pulses with variable polarization in bulk of the synthetic diamond, indicates different polarization-dependent regimes in the dynamics of electron-hole plasma formation, arising due to different processes of photoexcitation and recombination of free carriers during the filamentation process. Thus, at the onset of the filamentation process, at relatively low intensities, the photoluminescence yield rate depends on polarization azimuth controlling bandgap, while at high intensities the resulting dense absorbing plasma exhibits isotropy with respect to laser radiation polarization, and photoluminescence yield weakly depends on polarization azimuth

Polarization-Sensitive Nonlinear Optical Interaction of Ultrashort Laser Pulses with HPHT Diamond

The filamentation of focused 300 fs laser pulses with variable polarization azimuth in bulk of synthetic HPHT diamond demonstrates the possibility of polarization-dependent bandgap control for crystal dielectric photoexcitation. This directly affects the value of the filamentation threshold power, which exhibits the distinct dependence on the polarization azimuth angle. The nonlinear photoluminescence yield, when focusing ultrashort laser pulses with variable polarization in bulk of the synthetic diamond, indicates different polarization-dependent regimes in the dynamics of electron-hole plasma formation, arising due to different processes of photoexcitation and recombination of free carriers during the filamentation process. Thus, at the onset of the filamentation process, at relatively low intensities, the photoluminescence yield rate depends on polarization azimuth controlling bandgap, while at high intensities the resulting dense absorbing plasma exhibits isotropy with respect to laser radiation polarization, and photoluminescence yield weakly depends on polarization azimuth

CeOmegaApp. Aplicación de gestión para academias

[ES] CeOmegaApp es una aplicación de gestión de clientes, empleados y contabilidad orientada a las necesidades de una academia PYME. Ha sido desarrollada en versión de escritorio bajo la tecnología de JavaFX. A lo largo del proyecto se va a ver el uso de los distintos conocimientos obtenidos durante el grado, desde SQL hasta toma de requisitos. A través del proyecto será posible ver los problemas a los que se puede enfrentar un desarrollador y analizar las tomas de decisiones frente a estas adversidades.[EN] CeOmegaApp is an application to manage customers, staff and accounting aimed to the necessities of a language school of the SME sector (Small and Medium Enterprise). This tool has been developed as a desktop version under JavaFX technology. All the knowledge acquired in the degree will be applied throughout the project, from SQL to taking requirements. The project makes possible to see all the problems that a developer may have to deal with and to analyse the decision making in the face of these adversities.Navarro García, J. (2018). CeOmegaApp. Aplicación de gestión para academias. http://hdl.handle.net/10251/112650TFG

Superconductivity in Cu Co-Doped SrxBi2Se3 Single Crystals

In this study, we grew Cu co-doped single crystals of a topological superconductor candidate Sr x Bi 2 Se 3 , and studied their structural and transport properties. We reveal that the addition of even as small an amount of Cu co-dopant as 0.6 atomic %, completely suppresses superconductivity in Sr x Bi 2 Se 3 . Critical temperature (∼2.7 K) is rather robust with respect to co-doping. We show that Cu systematically increases the electron density and lattice parameters a and c. Our results demonstrate that superconductivity in Sr x Bi 2 Se 3 -based materials is induced by significantly lower Sr doping level x < 0.02 than commonly accepted x ∼ 0.06 , and it strongly depends on the specific arrangement of Sr atoms in the host matrix. The critical temperature in superconductive Sr-doped Bi 2 Se 3 is shown to be insensitive to carrier density