Prototypical Organic–Oxide Interface: Intramolecular Resolution of Sexiphenyl on In₂O₃(111)

The performance of an organic semiconductor device is critically determined by the geometric alignment, orientation, and ordering of the organic molecules. Although an organic multilayer eventually adopts the crystal structure of the organic material, the alignment and configuration at the interface with the substrate/electrode material are essential for charge injection into the organic layer. This work focuses on the prototypical organic semiconductor para-sexiphenyl (6P) adsorbed on In₂O₃(111), the thermodynamically most stable surface of the material that the most common transparent conducting oxide, indium tin oxide, is based on. The onset of nucleation and formation of the first monolayer are followed with atomically resolved scanning tunneling microscopy and noncontact atomic force microscopy (nc-AFM). Annealing to 200 °C provides sufficient thermal energy for the molecules to orient themselves along the high-symmetry directions of the surface, leading to a single adsorption site. The AFM data suggests an essentially planar adsorption geometry. With increasing coverage, the 6P molecules first form a loose network with a poor long-range order. Eventually, the molecules reorient into an ordered monolayer. This first monolayer has a densely packed, well-ordered (2 × 1) structure with one 6P per In₂O₃(111) substrate unit cell, that is, a molecular density of 5.64 × 10¹³ cm^–2

Chemical Identification of Single Atoms in Heterogeneous III–IV Chains on Si(100) Surface by Means of nc-AFM and DFT Calculations

Chemical identification of individual atoms in mixed In–Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished

Chemical Identification of Single Atoms in Heterogeneous III–IV Chains on Si(100) Surface by Means of nc-AFM and DFT Calculations

Chemical identification of individual atoms in mixed In–Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished

Chemical Identification of Single Atoms in Heterogeneous III–IV Chains on Si(100) Surface by Means of nc-AFM and DFT Calculations

Chemical identification of individual atoms in mixed In–Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished

Chemical Identification of Single Atoms in Heterogeneous III–IV Chains on Si(100) Surface by Means of nc-AFM and DFT Calculations

Chemical identification of individual atoms in mixed In–Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished

Chemical Identification of Single Atoms in Heterogeneous III–IV Chains on Si(100) Surface by Means of nc-AFM and DFT Calculations

Chemical identification of individual atoms in mixed In–Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished

Chemical Identification of Single Atoms in Heterogeneous III–IV Chains on Si(100) Surface by Means of nc-AFM and DFT Calculations

Chemical identification of individual atoms in mixed In–Sn chains grown on a Si(100)-(2 × 1) surface was investigated by means of room temperature dynamic noncontact AFM measurements and DFT calculations. We demonstrate that the chemical nature of each atom in the chain can be identified by means of measurements of the short-range forces acting between an AFM tip and the atom. On the basis of this method, we revealed incorporation of silicon atoms from the substrate into the metal chains. Analysis of the measured and calculated short-range forces indicates that even different chemical states of a single atom can be distinguished