1 research outputs found
Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices
The development of
GaN-on-diamond devices holds much promise for the creation of high-power
density electronics. Inherent to the growth of these devices, a dielectric
layer is placed between the GaN and diamond, which can contribute
significantly to the overall thermal resistance of the structure.
In this work, we explore the role of different interfaces in contributing
to the thermal resistance of the interface of GaN/diamond layers,
specifically using 5 nm layers of AlN, SiN, or no interlayer at all.
Using time-domain thermoreflectance along with electron energy loss
spectroscopy, we were able to determine that a SiN interfacial layer
provided the lowest thermal boundary resistance (<10 m<sup>2</sup>K/GW) because of the formation of an Si–C–N layer at
the interface. The AlN and no interlayer samples were observed to
have TBRs greater than 20 m<sup>2</sup>K/GW as a result of a harsh
growth environment that roughened the interface (enhancing phonon
scattering) when the GaN was not properly protected