776 research outputs found
Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates
Near-lattice-matched GaN/Al1âxInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1âxInxN. Screening of these fields is studied using the excitation power dependence of the P
Raman-scattering study of the InGaN alloy over the whole composition range
We present Raman-scattering measurements on InxGa1âxN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions
Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness
Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5âtoâ15ânm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered
Site multiplicity of rare earth ions in III-nitrides
This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect
Structural and optical properties of MOCVD AllnN epilayers
7] M.-Y. Ryu, C.Q. Chen, E. Kuokstis, J.W. Yang, G. Simin, M. Asif Khan, Appl. Phys. Lett. 80 (2002) 3730. [8] D. Xu, Y. Wang, H. Yang, L. Zheng, J. Li, L. Duan, R. Wu, Sci. China (a) 42 (1999) 517. [9] H. Hirayama, A. Kinoshita, A. Hirata, Y. Aoyagi, Phys. Stat. Sol. (a) 188 (2001) 83. [10] Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, S.Y. Wang, Appl. Phys. Lett. 72 (1998) 710. [11] Ig-Hyeon Kim, Hyeong-Soo Park, Yong-Jo Park, Taeil Kim, Appl. Phys. Lett. 73 (1998) 1634. [12] K. Watanabe, J.R. Yang, S.Y. Huang, K. Inoke, J.T. Hsu, R.C. Tu, T. Yamazaki, N. Nakanishi, M. Shiojiri, Appl. Phys. Lett. 82 (2003) 718
Electric field inside a "Rossky cavity" in uniformly polarized water
Electric field produced inside a solute by a uniformly polarized liquid is
strongly affected by dipolar polarization of the liquid at the interface. We
show, by numerical simulations, that the electric "cavity" field inside a
hydrated non-polar solute does not follow the predictions of standard Maxwell's
electrostatics of dielectrics. Instead, the field inside the solute tends, with
increasing solute size, to the limit predicted by the Lorentz virtual cavity.
The standard paradigm fails because of its reliance on the surface charge
density at the dielectric interface determined by the boundary conditions of
the Maxwell dielectric. The interface of a polar liquid instead carries a
preferential in-plane orientation of the surface dipoles thus producing
virtually no surface charge. The resulting boundary conditions for
electrostatic problems differ from the traditional recipes, affecting the
microscopic and macroscopic fields based on them. We show that relatively small
differences in cavity fields propagate into significant differences in the
dielectric constant of an ideal mixture. The slope of the dielectric increment
of the mixture versus the solute concentration depends strongly on which
polarization scenario at the interface is realized. A much steeper slope found
in the case of Lorentz polarization also implies a higher free energy penalty
for polarizing such mixtures.Comment: 9 pages, 8 figure
Correlating Composition and Luminescence Variations in AlInGaN epilayers
Epilayers of the quaternary alloy AlxInyGa1 x yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples
Parton Distributions in the Valon Model
The parton distribution functions determined by CTEQ at low are used as
inputs to test the validity of the valon model. The valon distributions in a
nucleon are first found to be nearly independent. The parton distribution
in a valon are shown to be consistent with being universal, independent of the
valon type. The momentum fractions of the partons in the valon add up
separately to one. These properties affirm the validity of the valon model. The
various distributions are parameterized for convenient application of the
model.Comment: 9 pages + 9 figures in ep
Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 â°C in vacuum, in flowing nitrogen gas or a mixture of NHâ and Nâ. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and Nâ already show the first signs of surface dissociation at 1000 â°C. At higher temperature, Ga droplets form, at the surface. However, samples annealed in NHâ+Nâ exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 â°C in NHâ+Nâ the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed
- âŠ