Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs

This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices.This work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5

Numerical study of p-type InSb and GaSb nanowires

III-V nanowires (NWs) have attracted extensive research interests in recent years because of their unique physical properties, being recognized as promising building blocks for the next generation of electronics and photonics. Most of the works up-to-date are, however, focused on n-type devices where materials such as InAs or InGaAs have already demonstrated impressive performance. Nevertheless, for the practical implementation of CMOS circuits based on NWs, p- channel FETs are mandatory. Several materials are currently being investigated as technologically relevant p-type semiconductors. In particular, increasingly more attention has been focused on InSb and GaSb NWs owing to their excellent hole transport properties. In this work we study the electrostatic properties of traditional p-type NWs based on Si and Ge compared to III-V materials.This work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873. A. Toral also acknowledges the University of Granada funding through the Becas de Iniciación a la Investigación para alumnus de Máster. J. M. González-Medina also acknowledges grant FPU014/02579

Gate capacitance performance of p-type InSb and GaSb nanowires

The electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to those achieved for Si and Ge NWs, and the contribution of each of the capacitance terms (quantum and inversion layer capacitances) is thoroughly analyzed.This work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873

Hole mobility of cylindrical GaSb nanowires

The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms.The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R

Calculation of the electronic structure and transport properties of semiconductor nanowires

The main objective of this PhD Thesis is the study of the performance of nanowire transistors, as they are postulated as an alternative for future technological nodes. To do so, this work presents the physical background and the numerical tools employed to achieve an accurate description of the electrostatic and transport properties of such devices, accounting for the dominant quantum effects which they undergo.Esta tesis tiene por objeto el estudio de las propiedades electrónicas y de transporte de los nanohilos semiconductores. La importancia tecnológica de estos dispositivos se basa en su potencial como alternativa de futuro a los dispositivos tradicionales dada la mejora en las prestaciones que presentan. Precisamente para poder predecir de manera precisa las prestaciones de estos dispositivos hemos comenzado con el estudio de la estructura de bandas en sistemas semiconductores confinados en dos dimensiones. Para ello hemos hecho uso del método k·p que permite una descripción correcta de la relación E − k en estos sistemas con un coste computacional limitado. Hemos comprobado la calidad de los resultados mediante comparaciones con el método Tight-Binding, que corresponde a una descripción atomística. Hemos observado ligeras desviaciones, dentro de lo previsto en aproximaciones basadas en parámetros semiempíricos.Tesis Univ. Granada. Programa Oficial de Doctorado en: Física y Ciencias del Espaci

Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs

This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices.This work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5

Numerical study of p-type InSb and GaSb nanowires

III-V nanowires (NWs) have attracted extensive research interests in recent years because of their unique physical properties, being recognized as promising building blocks for the next generation of electronics and photonics. Most of the works up-to-date are, however, focused on n-type devices where materials such as InAs or InGaAs have already demonstrated impressive performance. Nevertheless, for the practical implementation of CMOS circuits based on NWs, p- channel FETs are mandatory. Several materials are currently being investigated as technologically relevant p-type semiconductors. In particular, increasingly more attention has been focused on InSb and GaSb NWs owing to their excellent hole transport properties. In this work we study the electrostatic properties of traditional p-type NWs based on Si and Ge compared to III-V materials.This work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873. A. Toral also acknowledges the University of Granada funding through the Becas de Iniciación a la Investigación para alumnus de Máster. J. M. González-Medina also acknowledges grant FPU014/02579

Gate capacitance performance of p-type InSb and GaSb nanowires

The electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to those achieved for Si and Ge NWs, and the contribution of each of the capacitance terms (quantum and inversion layer capacitances) is thoroughly analyzed.This work was supported by the Spanish Government under the Project TEC2014-59730-R. C. Martínez-Blanque acknowledges the Junta de Andalucía support under project P09-TIC4873

Hole mobility of cylindrical GaSb nanowires

The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms.The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R