Notice of a new fossil annelid (Helminthodes antiquus) from the lithographic slates of Solenhofen

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Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

The electrical characteristics of various size tunnel switch diode devices, composed of Al/SiO2/n-Si/p+-Si layers, which operate with a range of parameters (such as current densities in excess of 104 A/cm2) that stress the oxide layer far beyond the levels used in typical thin oxide metal-oxide semiconductor research have been examined. It is found that the first time a large current and electric field are applied to the device, a "forming" process enhances transport through the oxide in the vicinity of the edges of the gate electrode, but the oxide still retains its integrity as a tunnel barrier. The device operation is relatively stable to stresses of greater than 107 C/cm2 areally averaged, time-integrated charge injection. Duplication and characterization of these modified oxide tunneling properties was attempted using scanning tunneling microscopy (STM) to stress and probe the oxide. Electrical stressing with the STM tip creates regions of reduced conductivity, possibly resulting from trapped charge in the oxide. Lateral variations in the conductivity of the unstressed oxide over regions roughly 20–50 nm across were also found

The Presence of Deep Levels in Ion Implanted Junctions

It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 10^16 to 1.8 × 10^18 atoms/cm^3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels

Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices

We present evidence that the critical thickness for the appearance of misfit defects in a given material and heteroepitaxial structure is not simply a function of lattice mismatch. We report substantial differences in the relaxation of mismatch stress in Ge_(0.5)Si_(0.5)/Si superlattices grown at different temperatures on (100) Si substrates. Samples have been analyzed by x‐ray diffraction, channeled Rutherford backscattering, and transmission electron microscopy. While a superlattice grown at 365 °C demonstrates a high degree of elastic strain, with a dislocation density <10^5 cm^(−2) , structures grown at higher temperatures show increasing numbers of structural defects, with densities reaching 2×10^(10) cm^(−2) at a growth temperature of 530 °C. Our results suggest that it is possible to freeze a lattice‐mismatched structure in a highly strained metastable state. Thus it is not surprising that experimentally observed critical thicknesses are rarely in agreement with those predicted by equilibrium theories

Low Luminosity Companions to White Dwarfs

This paper presents results of a near-infrared imaging survey for low mass stellar and substellar companions to white dwarfs. A wide field proper motion survey of 261 white dwarfs was capable of directly detecting companions at orbital separations between $\sim100$ and 5000 AU with masses as low as 0.05 $M_{\odot}$, while a deep near field search of 86 white dwarfs was capable of directly detecting companions at separations between $\sim50$ and 1100 AU with masses as low as 0.02 $M_{\odot}$. Additionally, all white dwarf targets were examined for near-infrared excess emission, a technique capable of detecting companions at arbitrarily close separations down to masses of 0.05 $M_{\odot}$. No brown dwarf candidates were detected, which implies a brown dwarf companion fraction of $<0.5$% for white dwarfs. In contrast, the stellar companion fraction of white dwarfs as measured by this survey is 22%, uncorrected for bias. Moreover, most of the known and suspected stellar companions to white dwarfs are low mass stars whose masses are only slightly greater than the masses of brown dwarfs. Twenty previously unknown stellar companions were detected, five of which are confirmed or likely white dwarfs themselves, while fifteen are confirmed or likely low mass stars. Similar to the distribution of cool field dwarfs as a function of spectral type, the number of cool unevolved dwarf companions peaks at mid-M type. Based on the present work, relative to this peak, field L dwarfs appear to be roughly 2-3 times more abundant than companion L dwarfs. Additionally, there is no evidence that the initial companion masses have been altered by post main sequence binary interactions.Comment: 149 pages, 59 figures, 11 tables, accepted to ApJ Supplement

Are Coronae of Magnetically Active Stars Heated by Flares? III. Analytical Distribution of Superimposed Flares

(abridged) We study the hypothesis that observed X-ray/extreme ultraviolet emission from coronae of magnetically active stars is entirely (or to a large part) due to the superposition of flares, using an analytic approach to determine the amplitude distribution of flares in light curves. The flare-heating hypothesis is motivated by time series that show continuous variability suggesting the presence of a large number of superimposed flares with similar rise and decay time scales. We rigorously relate the amplitude distribution of stellar flares to the observed histograms of binned counts and photon waiting times, under the assumption that the flares occur at random and have similar shapes. Applying these results to EUVE/DS observations of the flaring star AD Leo, we find that the flare amplitude distribution can be represented by a truncated power law with a power law index of 2.3 +/- 0.1. Our analytical results agree with existing Monte Carlo results of Kashyap et al. (2002) and Guedel et al. (2003). The method is applicable to a wide range of further stochastically bursting astrophysical sources such as cataclysmic variables, Gamma Ray Burst substructures, X-ray binaries, and spatially resolved observations of solar flares.Comment: accepted for publication in Ap

Thermodynamically admissible form for discrete hydrodynamics

We construct a discrete model of fluid particles according to the GENERIC formalism. The model has the form of Smoothed Particle Hydrodynamics including correct thermal fluctuations. A slight variation of the model reproduces the Dissipative Particle Dynamics model with any desired thermodynamic behavior. The resulting algorithm has the following properties: mass, momentum and energy are conserved, entropy is a non-decreasing function of time and the thermal fluctuations produce the correct Einstein distribution function at equilibrium.Comment: 4 page

Strain relaxation kinetics in Si1–xGex/Si heterostructures

Strain relaxation in Si1–xGex/Si superlattices and alloy films is studied as a function of ex situ anneal treatment with the use of x-ray diffraction and Raman spectroscopy. Samples are grown by molecular-beam epitaxy at an unusually low temperature (≈365 °C). This results in metastably strained alloy and superlattice films significantly in excess of critical thicknesses previously reported for such structures. Significant strain relaxation is observed upon anneal at temperatures as low as 390 °C. After a 700 °C, 2 h anneal, superlattices are observed to relax less fully (~43% of coherent strain) than corresponding alloys (~84% of coherent strain). Also, the strain relaxation kinetics of a Si1–xGex alloy layer is studied quantitatively. Alloy strain relaxation is approximately described by a single, thermally activated, first order kinetic process having activation energy Ea=2.0 eV. The relevance of our results to the microscopic mechanisms responsible for strain relaxation in lattice-mismatched semiconductor heterostructures is discussed