Construction of Non-Perturbative, Unitary Particle-Antiparticle Amplitudes for Finite Particle Number Scattering Formalisms

Starting from a unitary, Lorentz invariant two-particle scattering amplitude , we show how to use an identification and replacement process to construct a unique, unitary particle-antiparticle amplitude. This process differs from conventional on-shell Mandelstam s,t,u crossing in that the input and constructed amplitudes can be off-diagonal and off-energy shell. Further, amplitudes are constructed using the invariant parameters which are appropriate to use as driving terms in the multi-particle, multichannel non-perturbative, cluster decomposable, relativistic scattering equations of the Faddeev-type integral equations recently presented by Alfred, Kwizera, Lindesay and Noyes. It is therefore anticipated that when so employed, the resulting multi-channel solutions will also be unitary. The process preserves the usual particle-antiparticle symmetries. To illustrate this process, we construct a J=0 scattering length model chosen for simplicity. We also exhibit a class of physical models which contain a finite quantum mass parameter and are Lorentz invariant. These are constructed to reduce in the appropriate limits, and with the proper choice of value and sign of the interaction parameter, to the asymptotic solution of the non-relativistic Coulomb problem, including the forward scattering singularity, the essential singularity in the phase, and the Bohr bound-state spectrum

THE ANTHOLOGY OF STRESS FRACTURES

The article is devoted, to the history of studying of a problem, of stress fractures. The article raised, questions of terminology and statistics of stress fracture at different times by different authors and. the stage-by-stage scientific accumulation of information on this topic is shown

Energy state distributions of the P(b) centers at the (100), (110), and (111) Si/SiO(2) interfaces investigated by Laplace deep level transient spectroscopy

The energy distribution of the P(b) centers at the Si/SiO(2) interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only P(b0) states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for P(b0) and is presumed to be P(b1). (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2939001

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10 exp 12 cm exp−2 and 4×10 exp 14 cm exp−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×10 exp 13 cm exp −2 and a fluence of 1×10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Peer reviewe

Recombination via transition metals in solar silicon : the significance of hydrogen-metal reactions and lattice sites of metal atoms

The move towards lower cost sources of solar silicon has intensified efforts to investigate the possibilities of passivating or reducing the recombination activity caused by deep states associated with transition metals. This is particularly important for the case of the slow diffusing metals early in the periodic sequence which are not removed by conventional gettering. In this paper we examine reactions between hydrogen and transition metals and discuss the possibility of such reactions during cell processing. We analyse the case of hydrogenation of iron in p-type Si and show that FeH can form under non-equilibrium conditions. We consider the electrical activity of the slow diffusing metals Ti, V and Mo, how this is affected in the presence of hydrogen, and the stability of TM-H complexes formed. Finally we discuss recent experiments which indicate that resiting of some transition metals from the interstitial to substitutional site is possible in the presence of excess vacancies, leading to a reduction in recombination activity

THE MODERN DIAGNOSTIC METHODS OF DIABETIC FOOT SYNDROME

In this paper the authors summarized the literature data on diagnostics of diabetic foot syndrome. The review noted that the diagnosis should be based on an objective examination of the patient, as well as important special methods of investigation of the vascular system, including both invasive and noninvasive

Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films

It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron- contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250o C to 900o C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy (DLTS) analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change of the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700o C. The gettering process is found to become reaction-limited at higher temperatures

Rate theory of acceleration of the defect annealing driven by discrete breathers

Novel mechanisms of defect annealing in solids are discussed, which are based on the large amplitude anharmonic lattice vibrations, a.k.a. intrinsic localized modes or discrete breathers (DBs). A model for amplification of defect annealing rate in Ge by low energy plasma-generated DBs is proposed, in which, based on recent atomistic modelling, it is assumed that DBs can excite atoms around defects rather strongly, giving them energy $\gg k_BT$ for $\sim$100 oscillation periods. This is shown to result in the amplification of the annealing rates proportional to the DB flux, i.e. to the flux of ions (or energetic atoms) impinging at the Ge surface from inductively coupled plasma (ICP)Comment: 18 pages, 11 figures. arXiv admin note: text overlap with arXiv:1406.394