Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

[Image: see text] We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS(2), MoSe(2), WS(2), and WSe(2), and metal electrodes with different work functions (WFs). TMDs were deposited on SiO(2)/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal–semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV–ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS(2), while WSe(2)/metal junctions behaved according to the Schottky–Mott limit. WS(2) and MoSe(2) exhibited intermediate behavior

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy

We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2and MoSe2exhibited intermediate behavior

Exciton Dynamics in MoS2-Pentacene and WSe2-Pentacene Heterojunctions

We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2and WSe2monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2on SiO2. The B-exciton decay in WSe2shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions

Platinum Based Nanoparticles Produced by a Pulsed Spark Discharge as a Promising Material for Gas Sensors

We have applied spark ablation technology for producing nanoparticles from platinum ingots (purity of 99.97 wt. %) as a feed material by using air as a carrier gas. A maximum production rate of about 400 mg/h was achieved with an energy per pulse of 0.5 J and a pulse repetition rate of 250 Hz. The synthesized nanomaterial, composed of an amorphous platinum oxide PtO (83 wt. %) and a crystalline metallic platinum (17 wt. %), was used for formulating functional colloidal ink. Annealing of the deposited ink at 750 °C resulted in the formation of a polycrystalline material comprising 99.7 wt. % of platinum. To demonstrate the possibility of application of the formulated ink in printed electronics, we have patterned conductive lines and microheaters on alumina substrates and 20 μm thick low-temperature co-fired ceramic (LTCC) membranes with the use of aerosol jet printing technology. The power consumption of microheaters fabricated on LTCC membranes was found to be about 140 mW at a temperature of the hot part of 500 °C, thus allowing one to consider these structures as promising micro-hotplates for metal oxide semiconductor (MOS) gas sensors. The catalytic activity of the synthesized nanoparticles was demonstrated by measuring the resistance transients of the non-sintered microheaters upon exposure to 2500 ppm of hydrogen

Exciton Dynamics in MoS₂‑Pentacene and WSe₂‑Pentacene Heterojunctions

We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2 and WSe2 monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2 to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2 on SiO2. The B-exciton decay in WSe2 shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2 also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions