Optical properties of (3HgSe) 0.5 (In 2 Se 3 ) 0.5 crystals doped with Mn or Fe

Abstract. The mean refractive index and the reflection coefficient of (3HgSe) 0.5 (In 2 Se 3 ) 0.5 crystals doped with Mn and Fe have been investigated basing on the studies of their optical reflectance and transmittance at the room temperature and the wavelengths of 0.9-26.6 μm. The influence of temperature on the optical transmittance has been studied in the interval of 125-300 K

Особенности влияния условий роста на структурные и оптические свойства пленок Zn0.9Cd0.1O

The influence of the magnetron power and the gas ratio Ar/O2 on the microstructure and the optical properties of Zn0.9Cd0.1O films is studied. The films were deposited with the use of the dc magnetron sputtering technique at a temperature of 250 ◦C. Atomic force microscopy (AFM) and X-ray diffraction (XRD) researches of a surface morphology demonstrated a strong influence of deposition procedure parameters on the film microstructure. The XRD analysis revealed that all grown films were polycrystalline and single-phase. The increase of the gas ratio Ar/O2 was found to be beneficial for the crystalline structure of Zn0.9Cd0.1O ternary alloys. Peculiarities of the control over the band gap and the surface morphology for Zn0.9Cd0.1O ternary alloys by varying the growth parameters are discussed.Дослiджено вплив потужностi магнетрона i спiввiдношення тискiв робочих газiв Ar/O2 на мiкроструктуру та оптичнi властивостi плiвок Zn0.9Cd0.1O. Плiвки осаджено методом магнетронного розпилювання на постiйному струмi при температурi пiдкладки 250 C. Дослiдження морфологiї поверхнi, здійснені за допомогою атомно-силової мiкроскопiї (АСМ), i рентгено-фазовий аналiз (РФА) виявили сильний вплив технологічних параметрiв осадження на мiкроструктуру плiвок. РФА аналiз показав, що всi вирощенi плiвки є полiкристалiчними i однофазними. Встановлено, що зростання парцiального тиску аргону в газовiй сумiшi Ar/O2 сприятливо впливає на кристалічну структуру твердих розчинiв Zn0.9Cd0.1O. Обговорено особливостi контролю ширини забороненої зони та морфологiї поверхнi твердих розчинiв Zn0.9Cd0.1O шляхом змiни параметрiв вирощування.В работе исследовано влияние мощности магнетрона и соотношения давлений рабочих газов Ar/O2 на микроструктуру и оптические свойства пленок Zn0.9Cd0.1O. Пленки осаждены методом магнетронного распыления на постоянном токе при температуре подложки 250 C. Исследования морфологии поверхности, проведенные с помощью атомно-силовой микроскопии (АСМ), и рентгенофазовый анализ (РФА) выявили сильное влияние технологических параметров роста на микроструктуру пленок. РФА анализ показал, что все выращенные пленки являются поликристаллическими и однофазными. Было установлено, что рост парциального давления аргона в газовой смеси Ar/O2 благоприятно влияет на кристаллическую структуру твердых растворов Zn0;9Cd0;1O. Обсуждены особенности контроля ширины запрещенной зоны и морфологи поверхности твердых растворов Zn0;9Cd0;1O путем изменения параметров осаждени

Effects of Ar//O2Ar//O_2 Gas Ratio on the Properties of the Zn0.9Cd0.1OZn_{0.9}Cd_{0.1}O Films Prepared by DC Reactive Magnetron Sputtering

$Zn_{0.9}Cd_{0.1}O$ ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of $Zn_{0.9}Cd_{0.1}O$ films can be controlled by changing the gas ratio of $Ar//O_2$. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation

Electrical properties of heterostructures MnS/n-CdZnTe obtained by spray pyrolysis

The conditions for obtaining diode heterostructures of MnS/ n -CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n -CdZnTe crystalline substrates were investigated. Based on the analysis of the temperature dependences of the I-V-characteristics, the mechanisms of the influence of electronic processes on the forward current in the MnS film are established. The mechanisms of current flow at reverse bias are revealed. The conditions for the formation of the energy barrier at the MnS/ n -CdZnTe heterojunction and the influence on its parameters of the energy states at the semiconductor interface are studied. Based on the C-V-characteristics, the peculiarities of the distribution of electrically active impurities in the base region are investigated and the interaction of the alabandite film capacitance with the diffusion capacitance of the heterostructure is revealed. The proposed model of the energy diagram of the heterostructure well describes the experimental results