Ultralight vector dark matter search using data from the KAGRA O3GK run

Among the various candidates for dark matter (DM), ultralight vector DM can be probed by laser interferometric gravitational wave detectors through the measurement of oscillating length changes in the arm cavities. In this context, KAGRA has a unique feature due to differing compositions of its mirrors, enhancing the signal of vector DM in the length change in the auxiliary channels. Here we present the result of a search for U(1)B−L gauge boson DM using the KAGRA data from auxiliary length channels during the first joint observation run together with GEO600. By applying our search pipeline, which takes into account the stochastic nature of ultralight DM, upper bounds on the coupling strength between the U(1)B−L gauge boson and ordinary matter are obtained for a range of DM masses. While our constraints are less stringent than those derived from previous experiments, this study demonstrates the applicability of our method to the lower-mass vector DM search, which is made difficult in this measurement by the short observation time compared to the auto-correlation time scale of DM

Search for eccentric black hole coalescences during the third observing run of LIGO and Virgo

Despite the growing number of confident binary black hole coalescences observed through gravitational waves so far, the astrophysical origin of these binaries remains uncertain. Orbital eccentricity is one of the clearest tracers of binary formation channels. Identifying binary eccentricity, however, remains challenging due to the limited availability of gravitational waveforms that include effects of eccentricity. Here, we present observational results for a waveform-independent search sensitive to eccentric black hole coalescences, covering the third observing run (O3) of the LIGO and Virgo detectors. We identified no new high-significance candidates beyond those that were already identified with searches focusing on quasi-circular binaries. We determine the sensitivity of our search to high-mass (total mass M>70 M⊙) binaries covering eccentricities up to 0.3 at 15 Hz orbital frequency, and use this to compare model predictions to search results. Assuming all detections are indeed quasi-circular, for our fiducial population model, we place an upper limit for the merger rate density of high-mass binaries with eccentricities 0<e≤0.3 at 0.33 Gpc−3 yr−1 at 90\% confidence level

MBE Grown Vanadium Oxide Thin Films for Enhanced Non‐Enzymatic Glucose Sensing

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Optical and electrical performance of rear side epitaxial emitters for bifacial silicon solar cell application

© 2019 Elsevier B.V. In this work we investigated the optical and electrical performance of p-type epitaxial layers as the rear emitter of bifacial n-type PERT solar cells. In the first part of this paper, the surface morphology of epitaxial layers grown on textured surfaces is studied. Because of the epitaxial growth, a pyramids-rounding effect is observed as a result of {311} and {911} facet propagation. The growth pattern was quantified and modelled. In the second part of this paper, the optical performance of semi-device test structures is evaluated. The trend of the optical results in bifacial solar cell structures indicates that a final pyramid angle at the rear side around 20° gives the maximum light absorption in the wafer substrate. In this work we demonstrate that the epitaxial growth of the emitter on the textured rear side of these devices can already give a pyramid angle of 25° without having to introduce any additional polishing steps to modify the morphology of the textured surface. In the last part of this paper, we present the electrical results for semi-device structures created to quantify the recombination losses in the passivated and metallized regions of those p-type epitaxial emitters. These results indicate that by introducing a rear epitaxial emitter in the bifacial n-type PERT cell structure, we can increase the implied V oc up to 17 mV compared to a diffused emitter with the same sheet resistance.status: publishe

Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy

Vanadium sesquioxide (V2O3) is a strongly correlated electron material exhibiting two distinct metal–insulator transitions that can be tuned via strain, doping, or pressure, making it an interesting material for new-generation sensors or smart devices. For this purpose, it is required to achieve well-ordered epitaxial thin film growth with high-quality electrical and optical properties on technologically relevant substrates. We report the successful growth of epitaxial thin films of V2O3 via molecular beam epitaxy, in the paramagnetic insulating (PI) phase on the (111) plane of silicon, by tailoring the growth conditions. Extensive electrical, structural, and morphological characterization both in situ and ex situ has been performed on all samples. The structural analysis reveals that temperature plays a more impactful role in affecting the thin film microstructures than the oxygen partial pressure. When the epitaxy of V2O3 occurs on the unoxidized (111) plane of silicon, four equivalent epitaxial domains begin to form, leading to twin boundaries in the bulk of the film. The considerable lattice mismatch between silicon and V2O3 induces the growth of the corundum PI phase. Lastly, small deviations from stoichiometry due to different oxygen inflow during growth alter significantly the resistivity change upon cooling

Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy

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Performance and Thermal Stability of an a-Si:H/TiOx/Yb Stack as an Electron-Selective Contact in Silicon Heterojunction Solar Cells

© Copyright 2019 American Chemical Society. Low contact resistivity ( c ) and low recombination current density at the metallized area (J 0,metal ) are the key parameters for an electron-selective contact in solar cells, and an i-a-Si:H/TiO x /low work function metal (ATOM) structure could satisfy these criteria. In this work, to achieve strong downward band bending, an Yb ( = 2.5-2.6 eV)/Ag stack is used. Moreover, the impact of (1) substrate topography (flat or textured), (2) TiO x thickness, and (3) Ti precursor (TTIP vs TDMAT) on the ATOM contact performance is investigated. The results show that the ATOM contact is relatively insensitive to the surface topography and to the Ti precursors (TTIP or TDMAT) used for the atomic layer deposition (ALD) of TiO x . However, the TiO x thickness has a significant impact on the c and marginally on the J 0,metal of the ATOM contact. For all topography cases and Ti precursors, 1 nm thick TiO x results in the lowest c value, most likely due to E F,metal depinning. In the silicon heterojunction solar cell, this ATOM contact (i-a-Si:H/TiO x /Yb/Ag) yields a solar cell efficiency of 19.2% with a high V OC of 723 mV without the need of a doped n-a-Si:H layer. Concerning the thermal stability of these contacts, TEM images confirm that Yb does not diffuse into the i-a-Si:H layer after an annealing at 180 °C for 30 min thanks to the TiO x layer behaving as a diffusion barrier. 98% of the initial solar cell efficiency is preserved even after successive annealing treatments at 150 and 175 °C, which are values in the same temperature range used in the module lamination and the sintering of the printed Ag. These results in combination with the demonstrated efficiency underline that the ATOM contact is a promising route to realize high-efficiency solar cells.status: publishe

Performance and thermal stability of an a-Si:H/TiOx/Yb stack as an electron-selective contact in silicon heterojunction solar cells

Low contact resistivity (ρc) and low recombination current density at the metallized area (J0,metal) are the key parameters for an electron-selective contact in solar cells, and an i-a-Si:H/TiOx/low work function metal (ATOM) structure could satisfy these criteria. In this work, to achieve strong downward band bending, an Yb (Φ = 2.5–2.6 eV)/Ag stack is used. Moreover, the impact of (1) substrate topography (flat or textured), (2) TiOx thickness, and (3) Ti precursor (TTIP vs TDMAT) on the ATOM contact performance is investigated. The results show that the ATOM contact is relatively insensitive to the surface topography and to the Ti precursors (TTIP or TDMAT) used for the atomic layer deposition (ALD) of TiOx. However, the TiOx thickness has a significant impact on the ρc and marginally on the J0,metal of the ATOM contact. For all topography cases and Ti precursors, 1 nm thick TiOx results in the lowest ρc value, most likely due to EF,metal depinning. In the silicon heterojunction solar cell, this ATOM contact (i-a-Si:H/TiOx/Yb/Ag) yields a solar cell efficiency of 19.2% with a high VOC of 723 mV without the need of a doped n-a-Si:H layer. Concerning the thermal stability of these contacts, TEM images confirm that Yb does not diffuse into the i-a-Si:H layer after an annealing at 180 °C for 30 min thanks to the TiOx layer behaving as a diffusion barrier. 98% of the initial solar cell efficiency is preserved even after successive annealing treatments at 150 and 175 °C, which are values in the same temperature range used in the module lamination and the sintering of the printed Ag. These results in combination with the demonstrated efficiency underline that the ATOM contact is a promising route to realize high-efficiency solar cells. Keywords: electron-selective contact; low work function metal; MIS contact; passivating contact; Y

Low Work Function Ytterbium Silicide Contact for Doping-Free Silicon Solar Cells

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