Narrow stripe AlGaAs lasers using double current confinement

Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltback‐growth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers

Arrangement for damping the resonance in a laser diode

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector

Large optical cavity AlGaAs buried heterostructure window lasers

Large optical cavity buried heterostructure window lasers in which only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors have been fabricated. These lasers have threshold currents and differential quantum efficiencies comparable to those of regular large optical cavity buried heterostructure lasers in which the active region extends to the laser mirrors, however the window lasers have been operated under pulsed conditions at three times the power at which otherwise identical lasers without windows degrade by catastrophic mirror damage

Diffraction coupled phase-locked semiconductor laser array

A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (~3°) and peak power levels of 1 W have been obtained for 100-µm-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed

AlGaAs inverted strip buried heterostructure lasers

Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers

Double-heterostructure GaAs-GaAIAs injection lasers on semi-insulating substrates using carrier crowding

GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser action based on carrier confinement via the crowding effect has been demonstrated. Laser action takes place in a narrow (10–20 μm) region near the edge of the mesa where the current is injected. The threshold current is low and is comparable to that of stripe‐geometry lasers

Double heterostructure lasers with facets formed by a hybrid wet and reactive-ion-etching technique

Double heterostructure lasers were fabricated in which one of the laser facets was produced by a hybrid wet and reactive-ion-etching technique. This technique is suitable for GaAs/GaAlAs heterostructure lasers and utilizes the selectivity of the plasma in preferentially etching GaAs over GaAlAs. Lasers fabricated by this technique are compatible with optoelectronic integration and have threshold currents and quantum efficiency comparable to lasers with both mirrors formed by cleaving. The technique enables the use of relatively higher pressures of noncorrosive gases in the etch plasma resulting in smoother mirror surfaces and further eliminates the nonreproducibility inherent in the etching of GaAlAs layers

Monolithic integration of an injection laser and a metal semiconductor field effect transistor

A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated

Effect of spin-orbit interaction on heterojunction band discontinuities

The effect of spin-orbit interaction is included in the linear combination of atomic orbitals calculation of heterojunction band discontinuities. It is found that spin-orbit interaction is not negligible when the atomic number of the constituent atoms exceeds about 40. The effect of spin-orbit interaction as well as some interesting observations and their implications are briefly discussed

Tilted-mirror semiconductor lasers

Broad-area GaAs heterostructure lasers with a tilted mirror were demonstrated for the first time, with the tilted mirror fabricated by etching. These lasers operate in a smooth and stable single lateral mode with a high degree of spatial coherence. The suppression of filamentation manifests itself in a high degree of reproducibility in the near-field pattern