Monolithic integration of an injection laser and a metal semiconductor field effect transistor

A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated

Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrates

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated

GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions

Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components

Gallium Arsenide Monolithic Optoelectronic Circuits

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 µm) at collector current levels of 15 mA were obtained

Be-implanted (GaAl)As stripe geometry lasers

GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%

A monolithically integrated optical repeater

A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained