Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components

Lee, C. P.

Margalit, S.

Ury, I.

Yariv, A.

English

Caltech Authors - Main

Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
techniques that should lead to a sharper less -distorted 
focus. This should reduce the throughput loss and bring 
it closer to the theoretical limit. 
1M. K, Barnowski, Appl. Opt. 14, 2571 (1975). 
2M, C. Hudson and F. L, Thiel, Appl, Opt. 13, 2540 (1974). 
3R.A. Soref, D, H. McMahon, and A, R. Nelson, Appl, Phys. 
Lett, 28, 716 (1976). 
4A,R. Nelson, D,H. McMahon, andR.L. Gravel, Opt. Lett. 
1, 35 (1977). 
5R,A. Soref and A,R. Nelson, Appl. Opt. 16, 3223 (1977). 
GaAs-GaAIAs injection lasers on semi-insulating substrates 
using laterally diffused junctionsa> 
C. P. Lee, S. Margalit, I. Ury, and A. Yariv 
California Institute of Technology, Pasadena, California 91125 
(Received 28 October 1977; accepted for publication 24 January 1978) 
Low-threshold GaAs-GaAlAs lasers operating in a stable single mode have been fabricated using laterally 
diffused junctions. The lasers are fabricated on semi-insulating substrates and can be integrated with other 
components. 
PACS numbers: 42.55.Px, 42.60.By, 73.60.Fw 
We have recently reported on the fabrication, for the 
first time, of GaAs-GaAlAs injection lasers on semi-
insulating substrates. 1 Such lasers will be necessary 
for integration into complex monolithic optical circuits 
where individual active components need be electrically 
insulated from each other. 2 In the reported laser the 
gain region was limited transversely to a narrow stripe 
by the current crowding effect. It oscillated in a number 
of transverse modes, making for unstable spatial and 
spectral characteristics. These instabilities were 
largely eliminated by resorting to lateral injection of 
current from a zinc-diffused p• region. The resulting 
lasers, in addition to their stability, have very low 
threshold currents. 
The laser consists of a three-epilayer double hetero-
structure on a semi-insulating substrate and a Zn-
diffused region, as shown in Fig. l(b). The current 
entering through the p -type contact flows laterally 
across the junction to the n side. Since GaAlAs has a 
wider band gap than that of GaAs, carriers are injected 
predominantly across the GaAs p -n junction. Unlike the 
conventional stripe-geometry lasers, the effective area 
of current injection in this structure is determined by 
the thickness of the GaAs layer. Low-threshold lasers 
can be achieved, as submicron GaAs active layers can 
easily be grown using liquid -phase epitaxy. This method 
of transverse injection was first used by Namizaki 
et al. to make transverse junction stripe (TJS) lasers 
on n' GaAs substrates. 3 However, their structure 
suffered from current leakage across the (diffused) P 
GaAlAs-n GaAlAs junction which made for a rapid 
increase of the threshold current at higher tempera-
tures. 4 Susaki et al. recently used p-type substrates 
and a pnpn structure in the undiffus ed region to elimi-
nate this problem. 5 In our structure, which needs only 
a>work supported by the Office of Naval Research and the Na-
tional Science Foundation. 
three epilayers, this current leakage is eliminated be-
cause the substrate is semi-insulating GaAs. 
When fabricating the lasers we first grew in sequence 
the three n-type layers Ga1_%Al%As, GaAs, Ga1_%Al%As 
(x-O. 45) and then an undoped GaAs layer. The first 
three layers form a double heterostructure in the verti-
cal direction. The top GaAs layer was used as a diffu-
sion mask. The reason for using GaAs as the diffusion 
mask is our finding that the Zn diffusion coefficient in 
GaAs is much smaller than that in GaAlAs, and that the 
higher the Al concentration (at least up to x = 0. 45), 
the faster the diffusion. By using a normal epitaxially 
grown GaAs layer as a mask, we eliminate the extra 
step of depositing a mask. In addition, the GaAs layer 
is more stable than the regular masking layer, since 
no stress exists between the mask and the layer under 
it. The Zn diffusion was performed in two steps after 
etching away a part of the top GaAs layer. The diffu-
sion source was ZnAs 2• The first diffusion took place 
at 660°C for 1 h. The cross section of the layers after 
the first diffusion is shown in Fig. l(a). Owing to the 
SEMI-INSULATING GaAs 
(a) 
SEMI-INSULATING GoAs 
(b) 
FIG. 1. (a) The cross sec-
tion of the laser after the 
first-step diffusion. Right-
hand side of the top GaAs 
layer is etched away. The 
remaining part serves as a 
diffusion mask. (b) The 
cross section of the final 
structure, 
410 Appl. Phys. Lett. 32(7), 1 April 1978 0003·6951/78/3207/04 1 0$00.50 © 1978 American Institute of Physics 410 
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
FIG. 2. A SEM picture of the cross section of a laser. The 
right-hand side is the Zn-diffused region. Two boundaries 
correspond to two-step diffusion. The shape of the diffusion 
front shows different diffusion rates in GaAs and GaAlAs. 
different diffusion rates of Zn in GaAs and GaAlAs, the 
diffusion depth is much larger in the unmasked region. 
We then etched away the remaining GaAs mask selec-
tively. 6 Heat treatment was subsequently performed at 
860°C for 1. 5 h. Following that, metal contacts of Au-
Zn on the p side and Au-Ge on then side were applied 
separately. The laser chip was mounted on a Cu heat 
sink with the two contact leads pointing up. The final 
structure of the laser is shown schematically in 
Fig. 1(b}. Figure 2 is a SEM picture of the cross sec-
tion. Two diffusion fronts can be seen which are due to 
the two -step diffusion. The shape of the diffusion front 
shows very clearly that the diffusion in GaAs is slower 
than that in GaAlAs. In the GaAs region the diffusion 
front is not perpendicular but tilted at an angle to the 
plane of the epilayers. The width of the p-n junction in 
this region is wider than the thickness of the GaAs 
layer. Because of this, the laser is not the pure homo-
structure laser described in Refs. 4 and 5, but a com-
bination of the homostructure and the heterostructure. 
We have studied the properties of lasers with dif-
ferent doping concentration in the GaAs layer. We found 
that this concentration strongly affects the lasing char-
acteristics. Figure 3 shows the near field and the far 
field of a laser when the doping concentration is low ( 
(-1017 cm-3, Sn doped). The near field has a small tail 
penetrating into the n side. As the current increases 
(> 1. 5/th) more modes appear on the n side. The far 
NEAR FiELD 
>-
~ 
~ 
z 
'" ~ z 
~ 2~m 
I 
'-' 
~ 
'" >
~ 
:3 
w 
"' 
Sn-1 
I ' 1.5 I·~ >-
~ 
~ 
z 
'" ~ 
"' ~
I 
'-' 
~ 
'" ? 
~ 
~ 
DISTANCE 
FAR FIELD Sn-1 
" 0 (DEGREE) 
(o) (b) 
30 
FIG. 3. (a) The near field and (b) the far field of a laser with 
a lightly doped GaAs layer (~1 x1ot1 cm-3, Sn doped). The 
left-hand side of each picture is the n side, while the right-
hand side is the p side. 
411 Appl. Phys. Lett., Vol. 32, No. 7, 1 April 1978 
NEAR FIELD Te-8 
I•l.551 1h 
) \ 
DISTANCE 
lol 
FAR FIELD Te-B 
'!;: 
>= ~ :3 ~ 
~_j_~ 
45 15 0 15 ~0 45 
ANGLE {DEGREE l 
(b) 
FIG. 4 (a) The near field and (b) the far field of a laser with a 
heavily doped GaAs layer (~ 7 x1ot8 cm-3, Te doped). The left 
hand side of each picture is the N side, while the right side is 
the P side. 
field shows that the light is emitted at an angle with 
respect to the normal direction to then side. The maxi-
mum intensity appears at about 30°. This can be ex-
plained as follows: When the doping concentration of the 
n side of the junction is much lower than that of the 
p side, most of the recombination is due to hole injec-
tion. The laser light generated in the active region is 
guided along the junction by the mechanism of gain-loss 
guiding. The gain-loss profile in then side decays as 
we go further away from the junction. This results in 
the normal to the wave fronts of the laser mode being 
pointed toward the n side. Consequently, as the laser 
light exists from the mirror surface, it propagates 
toward the n side. This phenomenon has also been ob-
served in some other laser structure. 7• 8 When the 
n-type doping concentration of the GaAs layer is in-
creased, the near field becomes narrower and the peak 
of the far field moves toward the center. Figures 4(a) 
and 4(b}, for example, show the near field and the far 
field of lasers with a highly doped GaAs layer (- 7 x 1018 
cm-3, Te doped). The near field is very narrow with a 
>-
f-
VJ 
z 
w 
f-
z 
w 
> 
f-
"' _j w 
a: 
o ~ w ~ ~ ~ w ro oo 
CURRENT (mAl 
FIG. 5. The light-vs-current curve of a laser with a threshold 
of 36 mA. 
Lee eta/. 411 
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
>-
>--
(/) 
2 
w 
f-
2 
>-I 
(!) 
-' 
...... 
I:: 1.15lth 
. .it. ............. ..i. . 
.......,...... ..... ~ ........ """'""'~" r-
9060 9070 9080 9090 91 00 
WAVELENGTH IAl 
FIG. 6. The spectrum of a laser displaying a single longitudi-
nal mode. 
half-width of less than 2 !J.m. It corresponds to a single 
mode and stays stable as the current increases. The 
tail which appears on the n side at low doping concen-
trations is absent. These changes can be explained 
qualitatively as being caused by the fact that at some 
sufficiently high n doping, the increased electron in-
jection to the p side causes the gain-loss profile to be-
come symmetric about the junction plane. The far 
field, which is symmetric and centered at 0°, resem-
bles the usual far field of the conventional stripe-
geometry lasers. 
Then-type dopant we used for the GaAs layer is Sn 
for low doping and Te for high doping. The lasers with 
the lowest threshold currents have doping concentration 
of about 4 x 1018 cm" 3 (Sn doped). The lasing threshold 
of a 300-~J.m-long diode under pulsed operation is about 
40 rnA. Figure 5 shows the measured light intensity 
curve as a function of driving current. The threshold is 
36 rnA. The curve shows no kinks as the current is in-
creased up to two times the threshold value. The near 
412 Appl. Phys. Lett., Vol. 32, No.7, 1 April 1978 
field and the far field are similar to that shown in 
Fig. 4. 
The spectrum of the emitted light also varies as the 
n-type doping concentration in the GaAs layer is 
changed. At the low concentrations the spectrum shows 
the existence of a number of longitudinal modes. When 
the concentration is higher than about 5 x 10 18 cm·3 
(obtained by Te doping) a single longitudinal mode is 
observed. Figure 6 is the spectrum of one of these 
lasers. The oscillation wavelength is longer than that 
of the lasers with lower doping concentration, which 
might be due to the band tailing at high concentration. 
In conclusion, we have combined the Zn diffusion 
with heteroepitaxy to fabricate lasers on semi -insulat-
ing substrates. GaAs was found to be a good mask for 
Zn diffusion. The dependence of the mode structure and 
the spectrum on the doping concentration of the GaAs 
layer have been studied. Thresholds as low as 35 rnA 
have been achieved. 
Because the lasers are fabricated on semi-insulating 
GaAs substrates, it is possible that integration with 
other devices such as GaAs Schottky FET and Gunn de-
vice9 can be achieved. 
tc. P. Lee, S. Margalit, and A. Yariv, Appl. Phys. Lett. 31, 
281 (1977). 
2A. Yariv, in Proceedings of the 1972 Esfalu:m Conference on 
Pure and Applied Quantum Electronics, edited by A. Javan 
and M. Feld (MIT Press, Cambridge, 1973). 
3H, Namizaki, H. Kan, M. Ishii, and A. Ito, J. Appl, Phys, 
45, 2785 (1974). 
4H, Namizaki, IEEE J. Quantum Electron. QE-11, 427 
(1975). 
5W. Susaki, T. Tanaka, H. Kan, and M. Ishii, IEEE J, 
Quantum Electron. QE-13, 587 (1977). 
6R.A. LoganandF,K. Reinhart, J, Appl, Phys. 44,4172 
(1973). 
7D.R. Scifres, W. Streifer, and R.D. Burnham, Appl. Phys. 
Lett. 29, 23 (1976). 
8T. Kajimura, K. Saito, N. Shige, and R. Ito, Appl. Phys. 
Lett, 30, 590 (1977). 
9S. Margalit, C. P, Lee, and A. Yariv (unpublished). 
Lee et al. 412 


GaAs-GaAIAs injection lasers on semi-insulating substrates

using laterally diffused junctions

Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
techniques that should lead to a sharper less -distorted 
focus. This should reduce the throughput loss and bring 
it closer to the theoretical limit. 
1M. K, Barnowski, Appl. Opt. 14, 2571 (1975). 
2M, C. Hudson and F. L, Thiel, Appl, Opt. 13, 2540 (1974). 
3R.A. Soref, D, H. McMahon, and A, R. Nelson, Appl, Phys. 
Lett, 28, 716 (1976). 
4A,R. Nelson, D,H. McMahon, andR.L. Gravel, Opt. Lett. 
1, 35 (1977). 
5R,A. Soref and A,R. Nelson, Appl. Opt. 16, 3223 (1977). 
GaAs-GaAIAs injection lasers on semi-insulating substrates 
using laterally diffused junctionsa> 
C. P. Lee, S. Margalit, I. Ury, and A. Yariv 
California Institute of Technology, Pasadena, California 91125 
(Received 28 October 1977; accepted for publication 24 January 1978) 
Low-threshold GaAs-GaAlAs lasers operating in a stable single mode have been fabricated using laterally 
diffused junctions. The lasers are fabricated on semi-insulating substrates and can be integrated with other 
components. 
PACS numbers: 42.55.Px, 42.60.By, 73.60.Fw 
We have recently reported on the fabrication, for the 
first time, of GaAs-GaAlAs injection lasers on semi-
insulating substrates. 1 Such lasers will be necessary 
for integration into complex monolithic optical circuits 
where individual active components need be electrically 
insulated from each other. 2 In the reported laser the 
gain region was limited transversely to a narrow stripe 
by the current crowding effect. It oscillated in a number 
of transverse modes, making for unstable spatial and 
spectral characteristics. These instabilities were 
largely eliminated by resorting to lateral injection of 
current from a zinc-diffused p• region. The resulting 
lasers, in addition to their stability, have very low 
threshold currents. 
The laser consists of a three-epilayer double hetero-
structure on a semi-insulating substrate and a Zn-
diffused region, as shown in Fig. l(b). The current 
entering through the p -type contact flows laterally 
across the junction to the n side. Since GaAlAs has a 
wider band gap than that of GaAs, carriers are injected 
predominantly across the GaAs p -n junction. Unlike the 
conventional stripe-geometry lasers, the effective area 
of current injection in this structure is determined by 
the thickness of the GaAs layer. Low-threshold lasers 
can be achieved, as submicron GaAs active layers can 
easily be grown using liquid -phase epitaxy. This method 
of transverse injection was first used by Namizaki 
et al. to make transverse junction stripe (TJS) lasers 
on n' GaAs substrates. 3 However, their structure 
suffered from current leakage across the (diffused) P 
GaAlAs-n GaAlAs junction which made for a rapid 
increase of the threshold current at higher tempera-
tures. 4 Susaki et al. recently used p-type substrates 
and a pnpn structure in the undiffus ed region to elimi-
nate this problem. 5 In our structure, which needs only 
a>work supported by the Office of Naval Research and the Na-
tional Science Foundation. 
three epilayers, this current leakage is eliminated be-
cause the substrate is semi-insulating GaAs. 
When fabricating the lasers we first grew in sequence 
the three n-type layers Ga1_%Al%As, GaAs, Ga1_%Al%As 
(x-O. 45) and then an undoped GaAs layer. The first 
three layers form a double heterostructure in the verti-
cal direction. The top GaAs layer was used as a diffu-
sion mask. The reason for using GaAs as the diffusion 
mask is our finding that the Zn diffusion coefficient in 
GaAs is much smaller than that in GaAlAs, and that the 
higher the Al concentration (at least up to x = 0. 45), 
the faster the diffusion. By using a normal epitaxially 
grown GaAs layer as a mask, we eliminate the extra 
step of depositing a mask. In addition, the GaAs layer 
is more stable than the regular masking layer, since 
no stress exists between the mask and the layer under 
it. The Zn diffusion was performed in two steps after 
etching away a part of the top GaAs layer. The diffu-
sion source was ZnAs 2• The first diffusion took place 
at 660°C for 1 h. The cross section of the layers after 
the first diffusion is shown in Fig. l(a). Owing to the 
SEMI-INSULATING GaAs 
(a) 
SEMI-INSULATING GoAs 
(b) 
FIG. 1. (a) The cross sec-
tion of the laser after the 
first-step diffusion. Right-
hand side of the top GaAs 
layer is etched away. The 
remaining part serves as a 
diffusion mask. (b) The 
cross section of the final 
structure, 
410 Appl. Phys. Lett. 32(7), 1 April 1978 0003·6951/78/3207/04 1 0$00.50 © 1978 American Institute of Physics 410 
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
FIG. 2. A SEM picture of the cross section of a laser. The 
right-hand side is the Zn-diffused region. Two boundaries 
correspond to two-step diffusion. The shape of the diffusion 
front shows different diffusion rates in GaAs and GaAlAs. 
different diffusion rates of Zn in GaAs and GaAlAs, the 
diffusion depth is much larger in the unmasked region. 
We then etched away the remaining GaAs mask selec-
tively. 6 Heat treatment was subsequently performed at 
860°C for 1. 5 h. Following that, metal contacts of Au-
Zn on the p side and Au-Ge on then side were applied 
separately. The laser chip was mounted on a Cu heat 
sink with the two contact leads pointing up. The final 
structure of the laser is shown schematically in 
Fig. 1(b}. Figure 2 is a SEM picture of the cross sec-
tion. Two diffusion fronts can be seen which are due to 
the two -step diffusion. The shape of the diffusion front 
shows very clearly that the diffusion in GaAs is slower 
than that in GaAlAs. In the GaAs region the diffusion 
front is not perpendicular but tilted at an angle to the 
plane of the epilayers. The width of the p-n junction in 
this region is wider than the thickness of the GaAs 
layer. Because of this, the laser is not the pure homo-
structure laser described in Refs. 4 and 5, but a com-
bination of the homostructure and the heterostructure. 
We have studied the properties of lasers with dif-
ferent doping concentration in the GaAs layer. We found 
that this concentration strongly affects the lasing char-
acteristics. Figure 3 shows the near field and the far 
field of a laser when the doping concentration is low ( 
(-1017 cm-3, Sn doped). The near field has a small tail 
penetrating into the n side. As the current increases 
(> 1. 5/th) more modes appear on the n side. The far 
NEAR FiELD 
>-
~ 
~ 
z 
'" ~ z 
~ 2~m 
I 
'-' 
~ 
'" >
~ 
:3 
w 
"' 
Sn-1 
I ' 1.5 I·~ >-
~ 
~ 
z 
'" ~ 
"' ~
I 
'-' 
~ 
'" ? 
~ 
~ 
DISTANCE 
FAR FIELD Sn-1 
" 0 
(DEGREE) 
(o) (b) 
30 
FIG. 3. (a) The near field and (b) the far field of a laser with 
a lightly doped GaAs layer (~1 x1ot1 cm-3, Sn doped). The 
left-hand side of each picture is the n side, while the right-
hand side is the p side. 
411 Appl. Phys. Lett., Vol. 32, No. 7, 1 April 1978 
NEAR FIELD Te-8 
I•l.551 1h 
) \ 
DISTANCE 
lol 
FAR FIELD Te-B 
'!;: 
>= ~ :3 ~ 
~_j_~ 
45 15 0 15 ~0 45 
ANGLE {DEGREE l 
(b) 
FIG. 4 (a) The near field and (b) the far field of a laser with a 
heavily doped GaAs layer (~ 7 x1ot8 cm-3, Te doped). The left 
hand side of each picture is the N side, while the right side is 
the P side. 
field shows that the light is emitted at an angle with 
respect to the normal direction to then side. The maxi-
mum intensity appears at about 30°. This can be ex-
plained as follows: When the doping concentration of the 
n side of the junction is much lower than that of the 
p side, most of the recombination is due to hole injec-
tion. The laser light generated in the active region is 
guided along the junction by the mechanism of gain-loss 
guiding. The gain-loss profile in then side decays as 
we go further away from the junction. This results in 
the normal to the wave fronts of the laser mode being 
pointed toward the n side. Consequently, as the laser 
light exists from the mirror surface, it propagates 
toward the n side. This phenomenon has also been ob-
served in some other laser structure. 7• 8 When the 
n-type doping concentration of the GaAs layer is in-
creased, the near field becomes narrower and the peak 
of the far field moves toward the center. Figures 4(a) 
and 4(b}, for example, show the near field and the far 
field of lasers with a highly doped GaAs layer (- 7 x 1018 
cm-3, Te doped). The near field is very narrow with a 
>-
f-
VJ 
z 
w 
f-
z 
w 
> 
f-
"' _j w 
a: 
o ~ w ~ ~ ~ w ro oo 
CURRENT (mAl 
FIG. 5. The light-vs-current curve of a laser with a threshold 
of 36 mA. 
Lee eta/. 411 
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
>-
>--
(/) 
2 
w 
f-
2 
>-
I 
(!) 
-' 
...... 
I:: 1.15lth 
. .it. ............. ..i. . .......,...... ..... ~ ........ """'""'~" r-
9060 9070 9080 9090 91 00 
WAVELENGTH IAl 
FIG. 6. The spectrum of a laser displaying a single longitudi-
nal mode. 
half-width of less than 2 !J.m. It corresponds to a single 
mode and stays stable as the current increases. The 
tail which appears on the n side at low doping concen-
trations is absent. These changes can be explained 
qualitatively as being caused by the fact that at some 
sufficiently high n doping, the increased electron in-
jection to the p side causes the gain-loss profile to be-
come symmetric about the junction plane. The far 
field, which is symmetric and centered at 0°, resem-
bles the usual far field of the conventional stripe-
geometry lasers. 
Then-type dopant we used for the GaAs layer is Sn 
for low doping and Te for high doping. The lasers with 
the lowest threshold currents have doping concentration 
of about 4 x 1018 cm" 3 (Sn doped). The lasing threshold 
of a 300-~J.m-long diode under pulsed operation is about 
40 rnA. Figure 5 shows the measured light intensity 
curve as a function of driving current. The threshold is 
36 rnA. The curve shows no kinks as the current is in-
creased up to two times the threshold value. The near 
412 Appl. Phys. Lett., Vol. 32, No.7, 1 April 1978 
field and the far field are similar to that shown in 
Fig. 4. 
The spectrum of the emitted light also varies as the 
n-type doping concentration in the GaAs layer is 
changed. At the low concentrations the spectrum shows 
the existence of a number of longitudinal modes. When 
the concentration is higher than about 5 x 10 18 cm·3 
(obtained by Te doping) a single longitudinal mode is 
observed. Figure 6 is the spectrum of one of these 
lasers. The oscillation wavelength is longer than that 
of the lasers with lower doping concentration, which 
might be due to the band tailing at high concentration. 
In conclusion, we have combined the Zn diffusion 
with heteroepitaxy to fabricate lasers on semi -insulat-
ing substrates. GaAs was found to be a good mask for 
Zn diffusion. The dependence of the mode structure and 
the spectrum on the doping concentration of the GaAs 
layer have been studied. Thresholds as low as 35 rnA 
have been achieved. 
Because the lasers are fabricated on semi-insulating 
GaAs substrates, it is possible that integration with 
other devices such as GaAs Schottky FET and Gunn de-
vice9 can be achieved. 
tc. P. Lee, S. Margalit, and A. Yariv, Appl. Phys. Lett. 31, 
281 (1977). 
2A. Yariv, in Proceedings of the 1972 Esfalu:m Conference on 
Pure and Applied Quantum Electronics, edited by A. Javan 
and M. Feld (MIT Press, Cambridge, 1973). 
3H, Namizaki, H. Kan, M. Ishii, and A. Ito, J. Appl, Phys, 
45, 2785 (1974). 
4H, Namizaki, IEEE J. Quantum Electron. QE-11, 427 
(1975). 
5W. Susaki, T. Tanaka, H. Kan, and M. Ishii, IEEE J, 
Quantum Electron. QE-13, 587 (1977). 
6R.A. LoganandF,K. Reinhart, J, Appl, Phys. 44,4172 
(1973). 
7D.R. Scifres, W. Streifer, and R.D. Burnham, Appl. Phys. 
Lett. 29, 23 (1976). 
8T. Kajimura, K. Saito, N. Shige, and R. Ito, Appl. Phys. 
Lett, 30, 590 (1977). 
9S. Margalit, C. P, Lee, and A. Yariv (unpublished). 
Lee et al. 412 


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GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions

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