1 research outputs found
Fermi level of carriers in the volume filling defects structure based on heat-resistant metals
The volume filling defects structure based on metals are widely used in modern nan-
otechnology, especially when creating high temperature sensors and structural elements
based on metal foams [1]. The development of contactless and nondestructive methods for
diagnosis and test control parameters of multiply connected matrix base material is a very
important and interesting aspect of the application [2]. In a heat-resistant metal with the
volume filling defects (VFD) (micro- and nanopores with complex topologies and sizes,
see. Figure 1) it is primarily its strength and electrical and physical characteristics. Almost
all rapid methods of such measurements are based on both electrical measurements data
and on fundamental functional relationships establishing of the microstructure parameters
and the dispersion medium carriers [3]. The influence of a disordered set of volume filling
defects (VFD) (micro- and nano-pores of complex topology and various sizes, Figure 1.) is
the unsolved problem on the electronic properties of the micro heterogeneous materials
theory.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2060