Magnetic order and electronic transport properties in the Mn3Al compound: The role of the structural state

Electronic transport and magnetic properties of bulk and rapid melt quenched samples of the Mn3Al Heusler alloy were studied. A correlation between the magnetic and structural states was established. For a cast sample, there is no ferromagnetic moment, and the behavior of the magnetic susceptibility (break at low temperatures and the Curie-Weiss law with high values of the paramagnetic Curie temperature) indicates a frustrated antiferromagnetic state. At the same time, for a rapid melt quenched sample, a ferrimagnetic state is observed with a moment close to compensation. The results of measurements of the electrical resistivity and the Hall effect evidence as well in favor of the implementation of these magnetic states. © 2023 Elsevier B.V.Ministry of Education and Science of the Russian Federation, Minobrnauka: 122021000033-2, 122021000036-3; Russian Science Foundation, RSF: 22-22-00935Synthesis of the alloy and RMQ tapes, studies of electron transport and magnetic properties were supported by Russian Science Foundation (project No. 22-22-00935 ).The structure studies were carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes “Structure” No. 122021000033-2 and “Spin” No. 122021000036-3). Synthesis of the alloy and RMQ tapes, studies of electron transport and magnetic properties were supported by Russian Science Foundation (project No. 22-22-00935). Authors thank P.B. Terentyev, D.A. Shishkin, V.N. Neverov for help and valuable discussions

Multicomponent alloys with thermally, mechanically and magnetically controlled shape memory effects

This paper presents a brief review of the systematic study of the influence of the chemical composition on the structure, phase transformations and physical properties of binary and quasi-binary Ti-Ni, TiNi-TiFe, TiNi-NiCu, NiMn-NiGa and Ni2MnGa-Ni3Ga systems, which undergo thermoelastic martensitic transformations (TMT) and related with them thermally, mechanically, or magnetically controlled shape memory effects (SME). The effect of alloying with a third component on the behavior of critical temperatures and the TMT sequence has been established, and their generalized diagrams have been constructed. It is shown that the morphology of thermoelastic martensite is a hierarchy of packets of thin coherent crystals. © Published under licence by IOP Publishing Ltd.Russian Foundation for Basic Research, RFBR: 18-32-00529 mol_аUral Branch, Russian Academy of Sciences, UB RAS: 18-10-2-39Federal Agency for Scientific Organizations: АААА-А18-118020190116-6This work was performed within the state task of Federal Agency for Scientific Organizations (theme Struktura, no. АААА-А18-118020190116-6), with the support of the Project UB RAS (no. 18-10-2-39) and was partly supported by the Russian Foundation for Basic Research (project no. 18-32-00529 mol_а)

Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals

The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to 10 T. Theoretical calculations of the electronic structure of these compounds were carried out in density functional approach, taking into account spin–orbit coupling and crystal structure data for temperatures of 5, 50 and 300 K. A clear correlation was found between the density of electronic states at the Fermi level and the current carrier concentration. In the case of Bi2Te3, the density of states at the Fermi level and the current carrier concentration increase with increasing temperature, from 0.296 states eV−1 cell−1 (5 K) to 0.307 states eV−1 cell−1 (300 K) and from 0.9 × 1019 cm−3 (5 K) to 2.6 × 1019 cm−3 (300 K), respectively. On the contrary, in the case of Bi2Se3, the density of states decreases with increasing temperature, from 0.201 states eV−1 cell−1 (5 K) to 0.198 states eV−1 cell−1 (300 K), and, as a consequence, the charge carrier concentration also decreases from 2.94 × 1019 cm−3 (5 K) to 2.81 × 1019 cm−3 (300 K). © 2023 by the authors.Ministry of Education and Science of the Russian Federation, Minobrnauka: 122021000036-3, 122021000039-4; Russian Science Foundation, RSF: 22-42-02021This research was supported by Russian Science Foundation (project No. 22-42-02021) for the experimental and theoretical studies in Section 1, Section 2, Section 3.1 and Section 3.2 ; the analysis of current carrier concentration (Section 3.3) was done within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes «Spin», № 122021000036-3 and «Electron», № 122021000039-4)

Features of the electroresistivity, magnetic and galvanomagnetic characteristics in Co2MeSi Heusler alloys

The electro- and magneto-transport as well as magnetic properties of Co2MeSi (Me = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys were studied. The electroresistivity was measured from 4.2 to 300 K, the galvanomagnetic properties (magnetoresistivity and Hall effect) were measured at T = 4.2 K in magnetic fields of up to 100 kOe, and the magnetization at T = 4.2 and 300 K in fields of up to 70 kOe. The normal and anomalous Hall coefficients, saturation magnetization, residual resistivity, current carrier concentration, coefficients at linear contributions into the electroresistivity and magnetoresistivity were obtained. It was shown that on the one hand, there is quite clear correlation between the electronic and magnetic characteristics of Heusler alloys studied, and the spin polarization coefficients of current carriers, taken from well know literature data, on the other hand. The obtained results can be used for creation of new materials for spintronics. © 2021 Author(s).The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. AAAA-A18-118020290104-2), was supported in part by the Russian Foundation for Basic Research (Projects Nos. 18-02-00739 and 20-32-90065) and by the Government of the Russian Federation (decision No. 211, contract No. 02.A03.21.0006)

Electrical and optical properties of a PtSn 4 single crystal

A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•10 21 cm -3 and mobility of ∼ 1950 cm 2 /Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn 4 have features characteristic of "bad" metals. © 2019 Published under licence by IOP Publishing Ltd.This work was partly supported by the state assignment of Russia (theme “Spin” No. АААА-А18-18020290104-2 and theme “Electron” No. АААА-А18-118020190098-5), by the RFBR (project No.17-52-52008) and by the Government of the Russian Federation (state contract No. 02.A03.21.0006)

Electronic, magnetic and galvanomagnetic properties of Co-based Heusler alloys: Possible states of a half-metallic ferromagnet and spin gapless semiconductor

Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X2YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless semiconductors (SGSs) with almost 100% spin polarization of charge carriers are promising materials for spintronics. The changes in the electrical, magnetic and galvanomagnetic properties of the Co2YSi (Y = Ti, V, Cr, Mn, Fe) and Co2MnZ Heusler alloys (Z = Al, Si, Ga, Ge) in possible HMF- and/or SGS-states were followed and their interconnection was established. Significant changes in the values of the magnetization and residual resistivity were found. At the same time, the correlations between the changes in these electronic and magnetic characteristics depending on the number of valence electrons and spin polarization are observed. © 2021 Author(s).The work was performed within the framework of the state assignment of the Ministry of Science and Higher Education of Russia (the themes “Spin,” No. AAAA-A18-118020290104-2-2 and “Quantum” No. AAAA-A18-118020190095-4) with partial support from the RFBR (projects No. 18-02-00739 and 20-32-90065) and the Government of the Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006)

Peculiarities of the electro- And magnetoresistivity of WTe2and MoTe2single crystals before and after quenching

WTe2 and MoTe2 single crystals were grown, some of them were quenched, and the following properties were studied: electroresistivity in the temperature range from 1.8 to 300 K, magnetoresistivity at temperatures from 1.8 to 300 K in magnetic fields of up to 9 T. On the one hand, quenching leads to dramatic changes in the behaviour and value of the electroresistivity of MoTe2; the type of the electroresistivity changes from "semiconductor"to "metallic", and the electroresistivity values of MoTe2 before and after quenching differ by 8 orders of magnitude (!) at low temperatures. On the other hand, quenching is shown not to lead to significant changes in the behaviour and value of the electroresistivity of WTe2. A relatively small increase in the electroresistivity of quenched WTe2 at low temperatures can be associated with the scattering of current carriers by structural defects. The magnetoresistivity of MoTe2 increases from 7 to 16% in a field of 9 T at a temperature of 12 K as a result of quenching. The magnetoresistivity of WTe2 is shown to reach ∼1700% in a field of 9 T at 2 K. The behaviour of the magnetoresistivity of non-quenched samples is typical for compensated conductors with a closed Fermi surface. © 2021 Author(s).The research was carried out within the state assignment of Ministry of Education and Science of the Russian Federation (theme “Spin”, No. AAAA-A18-118020290104-2), supported in part by RFBR (Project No. 20-32-90069) and the Government of the Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006)

Electrical, magnetic and galvanomagnetic properties of Mn-based Heusler alloys

Half-metallic ferromagnets and spin gapless semiconductors are promising materials for spintronic devices since a high degree of the spin polarization of charge carriers can be realized in such materials. Spin gapless semiconductors make it possible to combine the properties of half-metallic ferromagnets with semiconductor characteristics and to perform fine tuning of the energy gap value. The Mn2 MeAl (Me = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys can possess such features. We studied the electrical, magnetic and galvanomagnetic properties of the Mn2 MeAl (Me = Ti, V, Cr, Mn, Fe, Co, Ni) Heusler alloys from 4.2 K to 900 K and in magnetic fields up to 100 kOe. The features in the electronic and magnetic properties of Mn2MeAl Heusler alloys were observed, which can be a manifestation of the electronic energy spectrum peculiarities with occurrence of the half-metallic ferromagnet and/or spin gapless semiconductor states. © Published under licence by IOP Publishing Ltd.Russian Foundation for Basic Research, RFBR: 18-02-00739Government Council on Grants, Russian Federation: 02, 211Ministry of Science and Higher Education of the Russian Federation: AAAA-A18-1118020190095-4Ural Branch, Russian Academy of Sciences, UB RAS: 18-10-2-37The work was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes “Spin”, No. AAAA-A18-118020290104-2-2 “Magnet”, No. АААА-А18-118020290129-5 and “Quant”, No. AAAA-A18-1118020190095-4), supported in part by RFBR (projects No. 18-02-00739), the Complex Program of the UB RAS (Project No. 18-10-2-37) and the Government of the Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006)

Magnetic and thermal properties of alloys close in composition to the spin gapless semiconductor Mn2CoAl

The field dependence of magnetization at T = 4.2 K and in magnetic fields of up to 70 kOe, temperature dependences of magnetization (2 K 11 kOe) magnetization is described in the Stoner models with the Rhodes-Wohlfarth parameter pRW = 1.3 for Mn1.99Co0.96Al1.05 and pRW = 2.3 for Mn1.79Co1.25Al0.96. When the composition deviates from the stoichiometric Mn2CoAl, the spontaneous moment decreases slightly, the effective moment, on the contrary, increases. In this case, a negative sign of the temperature-independent component of the paramagnetic susceptibility is observed. The density of states n(EF) at Fermi level and the Debye temperature ΘD of studied alloys have the usual values for 3d-metal alloys. © 2021 Author(s).The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. AAAA-A18-118020290104-2), was supported in part by the Russian Foundation for Basic Research (projects Nos. 18-02-00739 and 20-32-90065) and by the Government of the Russian Federation (decision No. 211, contract No. 02.A03.21.0006). The authors would like to thank D. A. Shishkin and P. B. Terentyev for measuring the magnetic properties of alloys at high temperatures

Electro- And magnetotransport properties of a WTe2 single crystal

A single crystal of a topological Weyl semimetal WTe2 was grown and its electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were investigated in detail in the temperature range from 1.8 K to 300 K and in magnetic fields of up to 9 T. © Published under licence by IOP Publishing Ltd.The research was carried out within the state assignment of Ministry of Education and Science of the Russian Federation (theme “Spin”, No. АААА-А18-118020290104-2), supported in part by RFBR (Project No. 20-32-90069) and the Government of Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006)