Size effect and the quadratic temperature dependence of the transverse magnetoresistivity in "size-effect" tungsten single crystals

The transverse magnetoresistivity of pure tungsten single crystals with a residual resistivity ratio ρ293K/ρ4.2K of about 75000 was measured from 4.2 to 20 K and in magnetic fields of up to 15 T. The size effect, i.e. the linear dependence of the magnetoconductivity on the inverse cross sample dimensions, was studied in detail at high fields. We show that the size effect can be used for the separation of the contributions from the electron-surface and the electron-phonon scattering mechanisms to the full conductivity. We demonstrate that the electron-phonon scattering leads to the exponential temperature dependence of the conductivity, and the interference between the electron-phonon and the electron-surface processes leads to a new scattering mechanism "electron-phonon-surface" with a quadratic temperature dependence of the magnetoconductivity. © Published under licence by IOP Publishing Ltd

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2_2YAl and Mn3_3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn$_2$YZ and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn$_2$YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds Mn$_3$Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn$_2$YAl and Mn$_3$Z compounds can be used for applications in micro- and nanoelectronics and spintronics.Comment: Review paper, 27 page

Specific features of the electrical resistance of half-metallic ferromagnetic alloys Co2CrAl and Co2CrGa

It has been shown by comparing the results of studying the electrical and magnetic properties of the half-metallic ferromagnetic Heusler alloys Co2CrAl and Co2CrGa with the calculations of their electronic structure that high values of the electrical resistivity ρ are caused by a disordered distribution of atoms over the sites of the L21 cubic structure, and the anomalous behavior of ρ(T) is associated with the transformation of the electronic spectrum due to the ferromagnetic-to-paramagnetic transition. © 2013 Pleiades Publishing, Ltd

Magnetic and electrical properties of the half-metallic ferromagnets Co2CrAl

This paper presents the results of measurements of the magnetic and electrical properties of the ferromagnetic alloy Co2CrAl in two structural states: (i) after severe plastic deformation and (ii) after shortterm high-temperature annealing of the deformed specimens. The experiments have been performed at temperatures in the range from 2 to 900 K in magnetic fields H ≤ 50 kOe. The ferromagnetic Curie temperature TC and the paramagnetic Curie temperature Θ have been determined (TC = 305 K and Θ = 326 K), as well as the spontaneous magnetic moment μS and the effective magnetic moment μeff per molecule of the alloy (μS = 1.62 μB and μeff 2 = 8.2 μB 2). It has been shown that the magnetic crystalline anisotropy energy of the alloy is on the order of ∼5 × 105 erg/g. The specific features of the electrical properties are associated with the presence of an energy gap in the electronic spectrum near the Fermi level EF and with the change in the parameters of the energy gap as a function of the temperature. © 2013 Pleiades Publishing, Ltd

Electrical and galvanomagnetic properties of AuAl2+6%Cu intermetallic compounds at low temperatures

The AuAl2 intermetallic compounds are of substantial interest in view of their application potential. The investigated intermetallics AuAl 2+6%Cu were prepared from fine powders of AuAl2 and Cu by vacuum sputtering on a glass substrate and consisted of films with a thickness of about one micrometer. The films were annealed. The temperature and field dependence of the electroresistivity, the magnetoresistivity and the Hall effect of AuAl2+6%Cu films were measured in the temperature interval from 4.2 to 100 K and at magnetic fields of up to 15 T. We demonstrate that the temperature dependence of the electroresistivity has a minimum at T = 20 K and a metallic behavior above this temperature. The magnetoresistivity is very small (less then 1%), positive at low temperatures and negative above 12 K. The Hall coefficient is positive, which corresponds to the holes in a one zone model with a charge carrier concentration of about 1.6 1020 cm-3. © Published under licence by IOP Publishing Ltd

Peculiarities of Electronic Transport and Magnetic State in Half-Metallic Ferromagnetic and Spin Gapless Semiconducting Heusler Alloys

Abstract: A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X2YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown that the Co2FeZ alloys demonstrate properties of conventional ferromagnets, the HMF properties being also manifested upon variation of the Z-component. The Fe2YAl and Mn2YAl alloys show upon variation of the Y-component both metallic and semiconducting electronic characteristics, the magnetic properties changing from the ferromagnetic to compensated ferrimagnetic state. The HMF and spin gapless semiconductor states are supposed to exist in these Heusler alloys systems. © 2019, Pleiades Publishing, Ltd

Half-Metallic Ferromagnets and Spin Gapless Semiconductors

Abstract: A brief review of experimental and theoretical studies of half-metallic ferromagnets (HMF) and spin gapless semiconductors (SGS) is presented. An important role of non-quasiparticle states owing to electron-magnon scattering in transport properties is discussed. The problem of low-temperature resistivity in HMF is treated in terms of one-magnon and two-magnon scattering processes. © 2018, Pleiades Publishing, Ltd

Peculiarities of the electronic transport in half-metallic Co-based Heusler alloys

Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to 100 kOe. It was found that varying Y in affects strongly the electric resistivity and its temperature dependence $\rho(T)$, while this effect is not observed upon changing Z. When Y is varied, extrema (maximum or minimum) are observed in $\rho(T)$ near the Curie temperature $T_C$. At $T < T_C$, the $\rho(T)$ behavior can be ascribed to a change in electronic energy spectrum near the Fermi level. The coefficients of the normal and anomalous Hall effect were determined. It was shown that the latter coefficient, $R_S$, is related to the residual resistivity $\rho_0$ by a power law $R_S \sim \rho_0^k/M_S$ with $M_S$ the spontaneous magnetization. The exponent $k$ was found to be 1.8 for Co$_2$FeZ alloys, which is typical for asymmetric scattering mechanisms, and 2.9 for Co$_2$YAl alloys, which indicates an additional contribution to the anomalous Hall effect. The temperature dependence of resistivity at low temperatures is analyzed and discussed in the framework of the two-magnon scattering theory.Comment: Invited Report on the Moscow International Symposium on Magnetism MISM-2017, pdf only, 6 pages, J. Magn. Magn. Mater., in pres

Unusual Kinetic Properties of Usual Heusler Alloys

The review considers various groups of Heusler compounds, which can have the properties of a semiconductor, a half-metallic ferromagnet, a spin gapless semiconductor, a topological semimetal, and a non-collinear antiferromagnet. In these Heusler compounds, “conventional” from the point of view of the crystal structure, unusual kinetic and magnetic properties can be observed, which are caused by the features of their electronic structure (e.g., presence of an energy gap for one spin projection) and magnetic state (e.g., strong ferromagnetism, compensated ferrimagnetism). Their magnetic and kinetic characteristics are very sensitive to external influences. Depending on the alloy composition and external parameters, transitions between the considered states can be realized. All this opens up further prospects for controlling the electronic and magnetic characteristics of such compounds and their practical application. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Ministry of Education and Science of the Russian Federation, Minobrnauka: 122021000036–3, 122021000038–7; Russian Science Foundation, RSF: 22–22-00935The research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes “Spin,” No. 122021000036–3 and “Quantum,” No. 122021000038–7). Research funding was provided by the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program). The Sect. was prepared with the financial support of the Russian Science Foundation within the framework of research project No. 22–22-00935

Size effect in the electronic transport of thin films of Bi 2 Se 3

Thin films of a topological insulator (TI) Bi 2 Se 3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to "separate" the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section. © 2018 The Authors, published by EDP Sciences.This work was partly supported by the state assignment of FASO of Russia (theme “Spin” No. ȺȺȺȺ Ⱥ 4 ), by the RFBR (project No. 17-52-52008), by the Government of the Russian Federation (state contract No. 02.A03.21.0006), and by grant of Russian Ministry of Education and Science No 14.Z50.31.0025