Efficient N-Type Organic Electrochemical Transistors and Field-Effect Transistors Based on PNDI-Copolymers Bearing Fluorinated Selenophene-Vinylene-Selenophenes

n-Type organic electrochemical transistors (OECTs) and organic field-effect transistors (OFETs) are less developed than their p-type counterparts. Herein, polynaphthalenediimide (PNDI)-based copolymers bearing novel fluorinated selenophene-vinylene-selenophene (FSVS) units as efficient materials for both n-type OECTs and n-type OFETs are reported. The PNDI polymers with oligo(ethylene glycol) (EG7) side chains P(NDIEG7-FSVS), affords a high µC* of > 0.2 F cm−1 V−1 s−1, outperforming the benchmark n-type Pg4NDI-T2 and Pg4NDI-gT2 by two orders of magnitude. The deep-lying LUMO of −4.63 eV endows P(NDIEG7-FSVS) with an ultra-low threshold voltage of 0.16 V. Moreover, the conjugated polymer with octyldodecyl (OD) side chains P(NDIOD-FSVS) exhibits a surprisingly low energetic disorder with an Urbach energy of 36 meV and an ultra-low activation energy of 39 meV, resulting in high electron mobility of up to 0.32 cm2 V−1 s−1 in n-type OFETs. These results demonstrate the great potential for simultaneously achieving a lower LUMO and a tighter intermolecular packing for the next-generation efficient n-type organic electronics

UV irradiation of Cu-based complexes with aliphatic amine ligands as used in living radical polymerization

The effect UV irradiation on Cu(II)-based complexes with aliphatic amine ligands is investigated. Four aliphatic amines are used as ligands and Cu(II)Br2 as the metal source for the formation of catalyst complexes that can be used for the photoinduced Cu-RDRP of methyl acrylate. Different characterization techniques such as transient electronic absorption spectroscopy (TEAS), ultraviolet-visible (UV-Vis) spectroscopy, electrospray ionization time of flight mass spectrometry (ESI-ToF-MS) and cyclic voltammetry (CV) are applied in order to provide insights into the catalyst behaviour upon photo-irradiation. The excited-state dynamics, the electrochemical behaviour of the Cu(II)/Cu(I) redox couples and the detection of different species upon complexation of the ligand to the metal center (before and after UV irradiation) are further depicted in the quality of the obtained polymers

Case Report - Intraspinal air after blunt thoracic trauma

Presence of intraspinal air (pneomorachis) is usually iatrogenic after epidural injections or spinal manipulations. It may also be associated with degenerative disc disease, epidural abscess and synovial cysts. Presented herein is a case of a child with pneomorachis following blunt thoracic trauma

Intraspinal air after blunt thoracic trauma

Presence of intraspinal air (pneomorachis) is usually iatrogenic after epidural injections or spinal manipulations. It may also be associated with degenerative disc disease, epidural abscess and synovial cysts. Presented herein is a case of a child with pneomorachis following blunt thoracic trauma

Influence of solvent on cyclic polynorbornene tacticity

Tacticity is critical to polymer properties

Efficient n‐type organic electrochemical transistors and field‐effect transistors based on PNDI‐copolymers bearing fluorinated selenophene‐vinylene‐selenophenes

n-Type organic electrochemical transistors (OECTs) and organic field-effect transistors (OFETs) are less developed than their p-type counterparts. Herein, polynaphthalenediimide (PNDI)-based copolymers bearing novel fluorinated selenophene-vinylene-selenophene (FSVS) units as efficient materials for both n-type OECTs and n-type OFETs is reported. The PNDI polymers with oligo(ethylene glycol) (EG7) side chains P(NDIEG7-FSVS), afford a high µC* of > 0.2 F cm–1V–1s–1, outperforming the benchmark n-type Pg4NDI-T2 and Pg4NDI-gT2 by two orders of magnitude. The deep-lying LUMO of −4.63 eV endows P(NDIEG7-FSVS) with an ultra-low threshold voltage of 0.16 V. Moreover, the conjugated polymer with octyldodecyl (OD) side chains P(NDIOD-FSVS) exhibits a surprisingly low energetic disorder with an Urbach energy of 36 meV and an ultra-low activation energy of 39 meV, resulting in high electron mobility of up to 0.32 cm2 V−1 s−1 in n-type OFETs. These results demonstrate the great potential for simultaneously achieving a lower LUMO and a tighter intermolecular packing for the next-generation efficient n-type organic electronics