1 research outputs found
Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO<sub>1‑v</sub> Epitaxial Films with High Co Concentration
While
semiconductor spintronics promises lower switching energy
and faster speed, a major limitation on its development as a viable
technology is the lack of room temperature ferromagnetic semiconductor
materials. The material challenge is great, because not only magnetic
and electronic doping but also thermally robust coupling between them
are required for a room temperature ferromagnetic semiconductor. Here,
we report the growth-controlled engineering of magnetic exchange interactions
in single crystalline GaCoZnO<sub>1‑<i>v</i></sub> epitaxial films with high Co concentrations (0.3 ≤ <i>x</i> ≤ 0.45) by controlling oxygen vacancy and carrier
density through Ga<sup>3+</sup> doping. Strong ferromagnetism, spin-split
impurity states, and spin-polarized electrical transport are realized
and well controlled at room temperature by tailoring the s,p–d
exchange coupling. This room temperature ferromagnetic semiconductor,
which offers the ability to individually control carrier density and
magnetic doping, will lay a solid foundation for the development of
practical spintronic devices operating at room temperature