Mapping the Conductance of Electronically Decoupled Graphene Nanoribbons

With the advent of atomically precise synthesis and consequent precise tailoring of their electronic properties, graphene nanoribbons (GNRs) have emerged as promising building blocks for nanoelectronics. Before being applied as such, it is imperative that their charge transport properties are investigated. Recently, formation of a molecular junction through the controlled attachment of nanoribbons to the probe of a scanning tunneling microscope (STM) and subsequent lifting allowed for the first conductance measurements. Drawbacks are the perturbation of the intrinsic electronic properties through interaction with the metal surface, as well as the risk of current-induced defect formation which largely restricts the measurements to low bias voltages. Here, we show that resonant transport – essential for device applications – can be measured by lifting electronically decoupled GNRs from an ultrathin layer of NaCl. By varying the applied voltage and tip–sample distance, we can probe resonant transport through..

Mapping the Conductance of Electronically Decoupled Graphene Nanoribbons

With the advent of atomically precise synthesis and consequent precise tailoring of their electronic properties, graphene nanoribbons (GNRs) have emerged as promising building blocks for nanoelectronics. Before being applied as such, it is imperative that their charge transport properties are investigated. Recently, formation of a molecular junction through the controlled attachment of nanoribbons to the probe of a scanning tunneling microscope (STM) and subsequent lifting allowed for the first conductance measurements. Drawbacks are the perturbation of the intrinsic electronic properties through interaction with the metal surface, as well as the risk of current-induced defect formation which largely restricts the measurements to low bias voltages. Here, we show that resonant transport – essential for device applications – can be measured by lifting electronically decoupled GNRs from an ultrathin layer of NaCl. By varying the applied voltage and tip–sample distance, we can probe resonant transport through..

Charge transport in topological graphene nanoribbons and nanoribbon heterostructures

Although it is generally accepted that structural parameters like width, shape, and edge structure crucially affect the electronic characteristics of graphene nanoribbons (GNRs), the exact relationship between geometry and charge transport remains largely unexplored. In this paper, we present in situ through-transport measurements of various topological GNRs and GNR heterostructures by lifting the ribbon with the tip of a scanning tunneling microscope. At the same time, we develop a comprehensive transport model that enables us to understand various features, such as obscuring of localized states in through transport, the effect of topology on transport, as well as negative differential conductance in heterostructures with localized electronic modes. The combined experimental and theoretical efforts described in this paper serve to elucidate general charge transport phenomena in GNRs and GNR heterostructures

Slow Hole Localization and Fast Electron Cooling in Cu-Doped InP/ZnSe Quantum Dots

Impurity doping of low-dimensional semiconductors is an interesting route towards achieving control over carrier dynamics and energetics, e.g., to improve hot carrier extraction, or to obtain strongly Stokes shifted luminescence. Such studies remain, however, underexplored for the emerging family of III-V colloidal quantum dots (QDs). Here, we show through a detailed global analysis of multiresonant pump-probe spectroscopy that electron cooling in copper-doped InP quantum dot (QDs) proceeds on subpicosecond time scales. Conversely, hole localization on Cu dopants is remarkably slow (1.8 ps), yet still leads to very efficient subgap emission. Due to this slow hole localization, common Auger assisted pathways in electron cooling cannot be blocked by Cu doping III-V systems, in contrast with the case of II-VI QDs. Finally, we argue that the structural relaxation around the Cu dopants, estimated to impart a reorganization energy of 220 meV, most likely proceeds simultaneously with the localization itself leading to efficient luminescence

High-Throughput Characterization of Single-Quantum-Dot Emission Spectra and Spectral Diffusion by Multiparticle Spectroscopy

In recent years, quantum dots (QDs) have emerged as bright, color-tunable light sources for various applications such as light-emitting devices, lasing, and bioimaging. One important next step to advance their applicability is to reduce particle-to-particle variations of the emission properties as well as fluctuations of a single QD’s emission spectrum, also known as spectral diffusion (SD). Characterizing SD is typically inefficient as it requires time-consuming measurements at the single-particle level. Here, however, we demonstrate multiparticle spectroscopy (MPS) as a high-throughput method to acquire statistically relevant information about both fluctuations at the single-particle level and variations at the level of a synthesis batch. In MPS, we simultaneously measure emission spectra of many (20-100) QDs with a high time resolution. We obtain statistics on single-particle emission line broadening for a batch of traditional CdSe-based core-shell QDs and a batch of the less toxic InP-based core-shell QDs. The CdSe-based QDs show significantly narrower homogeneous line widths, less SD, and less inhomogeneous broadening than the InP-based QDs. The time scales of SD are longer in the InP-based QDs than in the CdSe-based QDs. Based on the distributions and correlations in single-particle properties, we discuss the possible origins of line-width broadening of the two types of QDs. Our experiments pave the way to large-scale, high-throughput characterization of single-QD emission properties and will ultimately contribute to facilitating rational design of future QD structures.ChemE/Opto-electronic Material

Trapping and Detrapping in Colloidal Perovskite Nanoplatelets: Elucidation and Prevention of Nonradiative Processes through Chemical Treatment

Metal-halide perovskite nanocrystals show promise as the future active material in photovoltaics, lighting, and other optoelectronic applications. The appeal of these materials is largely due to the robustness of the optoelectronic properties to structural defects. The photoluminescence quantum yield (PLQY) of most types of perovskite nanocrystals is nevertheless below unity, evidencing the existence of nonradiative charge-carrier decay channels. In this work, we experimentally elucidate the nonradiative pathways in CsPbBr3 nanoplatelets, before and after chemical treatment with PbBr2 that improves the PLQY. A combination of picosecond streak camera and nanosecond time-correlated single-photon counting measurements is used to probe the excited-state dynamics over 6 orders of magnitude in time. We find that up to 40% of the nanoplatelets from a synthesis batch are entirely nonfluorescent and cannot be turned fluorescent through chemical treatment. The other nanoplatelets show fluorescence, but charge-carrier trapping leads to losses that are prevented by chemical treatment. Interestingly, even without chemical treatment, some losses due to trapping are mitigated because trapped carriers spontaneously detrap on nanosecond-to-microsecond timescales. Our analysis shows that multiple nonradiative pathways are active in perovskite nanoplatelets, which are affected differently by chemical treatment with PbBr2. More generally, our work highlights that in-depth studies using a combination of techniques are necessary to understand nonradiative pathways in fluorescent nanocrystals. Such understanding is essential to optimize synthesis and treatment procedures.</p

Trapping and Detrapping in Colloidal Perovskite Nanoplatelets: Elucidation and Prevention of Nonradiative Processes through Chemical Treatment

Metal-halide perovskite nanocrystals show promise as the future active material in photovoltaics, lighting, and other optoelectronic applications. The appeal of these materials is largely due to the robustness of the optoelectronic properties to structural defects. The photoluminescence quantum yield (PLQY) of most types of perovskite nanocrystals is nevertheless below unity, evidencing the existence of nonradiative charge-carrier decay channels. In this work, we experimentally elucidate the nonradiative pathways in CsPbBr3 nanoplatelets, before and after chemical treatment with PbBr2 that improves the PLQY. A combination of picosecond streak camera and nanosecond time-correlated single-photon counting measurements is used to probe the excited-state dynamics over 6 orders of magnitude in time. We find that up to 40% of the nanoplatelets from a synthesis batch are entirely nonfluorescent and cannot be turned fluorescent through chemical treatment. The other nanoplatelets show fluorescence, but charge-carrier trapping leads to losses that are prevented by chemical treatment. Interestingly, even without chemical treatment, some losses due to trapping are mitigated because trapped carriers spontaneously detrap on nanosecond-to-microsecond timescales. Our analysis shows that multiple nonradiative pathways are active in perovskite nanoplatelets, which are affected differently by chemical treatment with PbBr2. More generally, our work highlights that in-depth studies using a combination of techniques are necessary to understand nonradiative pathways in fluorescent nanocrystals. Such understanding is essential to optimize synthesis and treatment procedures.ChemE/Opto-electronic Material

Charge transport in topological graphene nanoribbons and nanoribbon heterostructures

Although it is generally accepted that structural parameters like width, shape, and edge structure crucially affect the electronic characteristics of graphene nanoribbons (GNRs), the exact relationship between geometry and charge transport remains largely unexplored. In this paper, we present in situ through-transport measurements of various topological GNRs and GNR heterostructures by lifting the ribbon with the tip of a scanning tunneling microscope. At the same time, we develop a comprehensive transport model that enables us to understand various features, such as obscuring of localized states in through transport, the effect of topology on transport, as well as negative differential conductance in heterostructures with localized electronic modes. The combined experimental and theoretical efforts described in this paper serve to elucidate general charge transport phenomena in GNRs and GNR heterostructures

Slow Hole Localization and Fast Electron Cooling in Cu-Doped InP/ZnSe Quantum Dots

Impurity doping of low-dimensional semiconductors is an interesting route towards achieving control over carrier dynamics and energetics, e.g., to improve hot carrier extraction, or to obtain strongly Stokes shifted luminescence. Such studies remain, however, underexplored for the emerging family of III-V colloidal quantum dots (QDs). Here, we show through a detailed global analysis of multiresonant pump-probe spectroscopy that electron cooling in copper-doped InP quantum dot (QDs) proceeds on subpicosecond time scales. Conversely, hole localization on Cu dopants is remarkably slow (1.8 ps), yet still leads to very efficient subgap emission. Due to this slow hole localization, common Auger assisted pathways in electron cooling cannot be blocked by Cu doping III-V systems, in contrast with the case of II-VI QDs. Finally, we argue that the structural relaxation around the Cu dopants, estimated to impart a reorganization energy of 220 meV, most likely proceeds simultaneously with the localization itself leading to efficient luminescence