Closed form solution for a double quantum well using Gr\"obner basis

Analytical expressions for spectrum, eigenfunctions and dipole matrix elements of a square double quantum well (DQW) are presented for a general case when the potential in different regions of the DQW has different heights and effective masses are different. This was achieved by Gr\"obner basis algorithm which allows to disentangle the resulting coupled polynomials without explicitly solving the transcendental eigenvalue equation.Comment: 4 figures, Mathematica full calculation noteboo

Electron-Paramagnetic-Resonance Study of GaAs Grown by Low-Temperature Molecular-Beam Epitaxy

Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3×1018 cm−3 ionized AsGa defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T≳500 °C

Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsN∕GaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsN∕GaAs samples is determined as [n]≈{2.35×1016(ωm−502)}cm−3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm−1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples

Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

Intersubband transitions in Si-doped molecular beam epitaxygrown GaN/AlGaN multiple quantum wells on c-plane sapphire were investigated using the Fourier-transform infrared optical absorption technique. Several GaN quantum well samples were grown with either AlGaN bulk or GaN/AlGaN short period superlattice barriers. The measurements were made in a waveguide configuration utilizing a facet polished at 45° to the c plane. The integrated area of the intersubband transitions in several waveguides cut from different location of the wafer was measured, from which we estimated the two-dimensional electron gas density (σ). The measured values of σ are about two orders of magnitude larger than the Si doping level of ∼8×1017 cm−3, which is consistent with the polarization effects, particularly considering the large number of GaN/AlGaN interfaces. The internal quantum efficiency of the intersubband transitions was estimated to be on the order of 40% for samples with superlattice barriers

Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

Intersubband transitions in GaN∕AlN short period superlattices prepared by molecular beam epitaxy were investigated using the optical absorption technique. The peak position wavelengths of these transitions are found to span the spectral range of 1.35–2.90μm for samples cut into 45° waveguides with GaNquantum well thicknesses ranging between 1.70 and2.41nm. The Fermi energy levels are estimated from the carrier concentrations, which were measured using an electrochemical capacitance-voltage profiler. The well widths were inferred from comparing the measured peak position energy of the intersubband transitions and the bound state energy levels calculated using the transfer matrix method

Nonlinear thermoelectric response of quantum dots: renormalized dual fermions out of equilibrium

The thermoelectric transport properties of nanostructured devices continue to attract attention from theorists and experimentalist alike as the spatial confinement allows for a controlled approach to transport properties of correlated matter. Most of the existing work, however, focuses on thermoelectric transport in the linear regime despite the fact that the nonlinear conductance of correlated quantum dots has been studied in some detail throughout the last decade. Here, we review our recent work on the effect of particle-hole asymmetry on the nonlinear transport properties in the vicinity of the strong coupling limit of Kondo-correlated quantum dots and extend the underlying method, a renormalized superperturbation theory on the Keldysh contour, to the thermal conductance in the nonlinear regime. We determine the charge, energy, and heat current through the nanostructure and study the nonlinear transport coefficients, the entropy production, and the fate of the Wiedemann-Franz law in the non-thermal steady-state. Our approach is based on a renormalized perturbation theory in terms of dual fermions around the particle-hole symmetric strong-coupling limit.Comment: chapter contributed to 'New Materials for Thermoelectric Applications: Theory and Experiment' Springer Series: NATO Science for Peace and Security Series - B: Physics and Biophysics, Veljko Zlatic (Editor), Alex Hewson (Editor). ISBN: 978-9400749863 (2012

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications