On-Chip Detection of Gel Transition Temperature using a Novel Micro-Thermomechanical Method

We present a new thermomechanical method and a platform to measure the phase transition temperature at microscale. A thin film metal sensor on a membrane simultaneously measures both temperature and mechanical strain of the sample during heating and cooling cycles. This thermomechanical principle of operation is described in detail. Physical hydrogel samples are prepared as a disc-shaped gels (200 μm thick and 1 mm diameter) and placed between an on-chip heater and sensor devices. The sol-gel transition temperature of gelatin solution at various concentrations, used as a model physical hydrogel, shows less than 3% deviation from in-depth rheological results. The developed thermomechanical methodology is promising for precise characterization of phase transition temperature of thermogels at microscale

A Patterned Single Layer Graphene Resistance Temperature Sensor

Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO2)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors act as resistance temperature detectors, showing a quadratic dependence of resistance on the temperature in a range between 283 K and 303 K. The observed resistance change of the graphene temperature sensors are explained by the temperature dependent electron mobility relationship (~T−4) and electron-phonon scattering. By analyzing the transient response of the SLG temperature sensors on different substrates, it is found that the graphene sensor on the SiN membrane shows the highest sensitivity due to low thermal mass, while the sensor on SiO2/Si reveals the lowest one. Also, the graphene on the SiN membrane reveals not only the fastest response, but also better mechanical stability compared to the suspended graphene sensor. Therefore, the presented results show that the temperature sensors based on SLG with an extremely low thermal mass can be used in various applications requiring high sensitivity and fast operation

Optimization of the Bowtie Gap Geometry for a Maximum Electric Field Enhancement

Optimization of the geometry of a metallic bowtie gap at radio frequency is presented. We investigate the geometry of the bowtie gap including gap size, tip width, metal thickness and tip angle at macroscale to find the maximum electric field enhancement across the gap. The results indicate that 90∘ bowtie with 0.06 λ gap size has the most |Et|2 enhancement. Effects of changing the permittivity and conductivity of the material across the gap are also investigated. NEC-2 simulations show that the numerical calculations agree with the experimental results. Since the design and fabrication of a plasmonic device (nanogap) at nanoscale is challenging, the results of this study can be used to estimate the best design parameters for nanogap structure. Different amounts of enhancement at different frequency ranges are explained by mode volume. The product of the mode volume and |Et|2 enhancement is constant for different gap structures and different frequencies

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga _2 O _3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics

Vibrational and Sonochemical Characterization of Ultrasonic Endodontic Activating Devices for Translation to Clinical Efficacy

Passive activation of endodontic irrigants provides improved canal disinfection, smear layer removal, and better subsequent sealing. Although evidence suggests that passive activating endodontic devices increase the effectiveness of irrigation, no study exists to quantitatively compare and validate vibrational characteristics and cavitation produced by different ultrasonic endodontic devices. The current study aims to compare the efficiency of various commercially available ultrasonic endodontic activating devices (i.e., EndoUltra™, EndoChuck, Irrisafe™, and PiezoFlow®). The passive endodontic activating devices were characterized in terms of tip displacement and cavitation performance using scanning laser vibrometry (SLV) and sonochemical analysis, respectively. The obtained results showed that activator tip displacements and speed correlate to established cavitation thresholds. The EndoUltra™ tip speed was measured to be 14.5 and 28.1 m/s at 45 and 91 kHz, respectively, which is greater than the threshold. The EndoUltra™ was found to be the only device that exceeds the cavitation thresholds (i.e. tip speed and displacement), as evident from laser vibrometry analysis, and subsequently yielded measurable cavitation quantified via sonochemical analysis. All other passive endodontic activation devices, despite ultrasonic oscillation, were unable to produce cavitation