New chemically induced skin tumour susceptibility loci identified in a mouse backcross between FVB and dominant resistant PWK

<p>Abstract</p> <p>Background</p> <p>A variety of skin cancer susceptibility among mouse strains has allowed identification of genes responsible for skin cancer development. Fifteen <it>Skts </it>loci for skin tumour susceptibility have been mapped so far by using the two-stage skin carcinogenesis model [induced by 7.12-dimethylbenz(a)anthracene (DMBA)/12-O-tetradecanoylphorbol-13-acetate (TPA)]. A few responsible genes have been identified using wild-derived dominant resistant <it>Mus spretus </it>mice, and one has been confirmed as a low penetrance cancer susceptibility gene in a variety of human cancers.</p> <p>Results</p> <p>In the present study, we found that wild-derived PWK mice developed no tumour by treatment with the two-stage skin carcinogenesis protocol. This phenotype is dominant resistant when crossed with the highly susceptible strain FVB. By analyzing the F1 backcross generation between PWK and FVB, we found empirical evidence of significant linkage at the new loci <it>Skts-fp1 </it>on chromosome 4 and suggestive linkage on chromosomes 1, 3, 11, 12 and 14 for skin tumour susceptibility. <it>Skts-fp1 </it>includes the <it>Skts7 </it>interval, which was previously mapped by a <it>Mus spretus </it>and NIH backcross. We also observed suggestive linkage on chromosomes 1 and 2 in the female population only, while suggestive linkage on chromosomes 14 and 15 only was observed in the male population. A significant genetic interaction was seen between markers of <it>D11Mit339</it> and <it>D16Mit14</it>.</p> <p>Conclusion</p> <p>Analysis of this new cross may facilitate the identification of genes responsible for mouse skin cancer susceptibility and may reveal their biological interactions.</p

Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5µm/h under UV light irradiation in 1wt% KOH at a constant current of 0.5mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC

Observation of domain wall bimerons in chiral magnets

Topological defects embedded in or combined with domain walls have been proposed in various systems, some of which are referred to as domain wall skyrmions or domain wall bimerons. However, the experimental observation of such topological defects remains an ongoing challenge. Here, using Lorentz transmission electron microscopy, we report the experimental discovery of domain wall bimerons in chiral magnet Co-Zn-Mn(110) thin films. By applying a magnetic field, multidomain structures develop, and simultaneously, chained and isolated bimerons arise as the localized state between the domains with the opposite in-plane components of net magnetization. The multidomain formation is attributed to magnetic anisotropy and dipolar interaction, and domain wall bimerons are stabilized by the Dzyaloshinskii-Moriya interaction. In addition, micromagnetic simulations show that domain wall bimerons appear for a wide range of conditions in chiral magnets with cubic magnetic anisotropy. Our results promote further study in various fields of physics.Comment: 30 pages, 10 figures (including Supplementary Materials

Carrier doping effect of humidity for single-crystal graphene on SiC

Carrier doping effects of water vapor and an adsorbed water layer on single-crystal graphene were evaluated. After annealing at 300 °C in nitrogen ambient, the sheet resistance of epitaxial graphene on a SiC substrate had a minimum value of 800 Ω/sq and the carrier density was estimated to be 1.2 × 1013 cm-2 for an n-type dopant. The adsorbed water layer, which acted as a p-type dopant with a carrier density of -7.4 × 1012 cm-2, was formed by deionized (DI) water treatment. The sheet resistances of graphene samples increased with humidity, owing to the counter doping effect. The estimated p-type doping amounts of saturated water vapor were -2.5 × 1012 cm-2 for DI-water-treated graphene and -3.5 × 1012 cm-2 for annealed graphene