HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET

In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the design, 3D device simulation has been performed to predict the characteristics of the device. The device has been benchmarked against published state of the art HEMT as well as planar and non-planar Si NMOSFET data of comparable gate length using standard benchmarking techniques.Comment: 3 pages, 4 figure

Effects of Parasitics and Interface Traps On Ballistic Nanowire FET In The Ultimate Quantum Capacitance Limit

In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultimate Quantum Capacitance Limit (UQCL) (where only one subband is occupied) in the presence of interface traps ($D_{it}$), parasitic capacitance ($C_L$) and source/drain series resistance ($R_{s,d}$) using a ballistic transport model and compare the performance with its Classical Capacitance Limit (CCL) counterpart. We discuss four different aspects relevant to the present scenario, namely, (i) gate voltage dependent capacitance, (ii) saturation of the drain current, (iii) the subthreshold slope and (iv) the scaling performance. To gain physical insights into these effects, we also develop a set of semi-analytical equations. The key observations are: (1) A strongly energy-quantized nanowire shows non-monotonic multiple peak C-V characteristics due to discrete contributions from individual subbands; (2) The ballistic drain current saturates better in the UQCL compared to CCL, both in presence and absence of $D_{it}$ and $R_{s,d}$; (3) The subthreshold slope does not suffer any relative degradation in the UQCL compared to CCL, even with $D_{it}$ and $R_{s,d}$; (4) UQCL scaling outperforms CCL in the ideal condition; (5) UQCL scaling is more immune to $R_{s,d}$, but presence of $D_{it}$ and $C_L$ significantly degrades scaling advantages in the UQCL.Comment: Accepted at IEEE Transactions on Electron Device

Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks

The self-gain of surface channel compressively strained SiGe pMOSFETs with HfSiOx/TiSiN gate stacks is investigated for a range of gate lengths down to 55 nm. There is 125% and 700% enhancement in the self-gain of SiGe pMOSFETs compared with the Si control at 100 nm and 55 nm lithographic gate lengths, respectively. This improvement in the self-gain of the SiGe devices is due to 80% hole mobility enhancement compared with the Si control and improved electrostatic integrity in the SiGe devices due to less boron diffusion into the channel. At 55 nm gate length, the SiGe pMOSFETs show 50% less drain induced barrier lowering compared with the Si control devices. Electrical measurements show that the SiGe devices have larger effective channel lengths. It is shown that the enhancement in the self-gain of the SiGe devices compared with the Si control increases as the gate length is reduced thereby making SiGe pMOSFETs with HfSiOx/TiSiN gate stacks an excellent candidate for analog/mixed-signal applications

Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks

The short-channel performance of compressively strained Si0.77Ge0.23 pMOSFETs with HfSiOx/TiSiN gate stacks has been characterized alongside that of unstrained-Si pMOSFETs. Strained-SiGe devices exhibit 80% mobility enhancement compared with Si control devices at an effective vertical field of 1 MV middotcm-1. For the first time, the on-state drain-current enhancement of intrinsic strained-SiGe devices is shown to be approximately constant with scaling. Intrinsic strained-SiGe devices with 100-nm gate lengths exhibit 75% enhancement in maximum transconductance compared with Si control devices, using only ~20% Ge (~0.8% strain). The origin of the loss in performance enhancement commonly observed in strained-SiGe devices at short gate lengths is examined and found to be dominated by reduced boron diffusivity and increased parasitic series resistance in compressively strained SiGe devices compared with silicon control devices. The effective channel length was extracted from I- V measurements and was found to be 40% smaller in 100-nm silicon control devices than in SiGe devices having the same lithographic gate lengths, which is in good agreement with the metallurgical channel length predicted by TCAD process simulations. Self-heating due to the low thermal conductivity of SiGe is shown to have a negligible effect on the scaled-device performance. These findings demonstrate that the significant on-state performance gains of strained-SiGe pMOSFETs compared with bulk Si devices observed at long channel lengths are also obtainable in scaled devices if dopant diffusion, silicidation, and contact modules can be optimized for SiGe

Regulation and Expression of Phytohormones for Root Architectural Trait Development in Rice: A Review

The root system architecture (RSA) in monocotyledonous plants like rice is consists of primary roots, lateral roots, seminal/crown roots, and root hairs. The soil nutrients also influence many physiological processes via various root parameters like root length, root diameter and root angle for growth and development. The variation in root system architecture in rice is influenced by the intrinsic factors (phytohormones, transcription factors) and extrinsic factors (light, temperature and moisture) and their collective effect. The phytohormones such as; auxin, cytokinin, abscisic acid and ethylene, and their mutual effects play vital role for root architectural trait development. Many genes/QTLs were identified in rice which are strong role player for root development. But the biochemical signaling pathways are not completely understood. The modern molecular tools like genome editing, sequencing and multi-omics (transcriptomics and proteomics) approaches and multi-disciplinary system biology studies can provide a better solution for this issue. To improve the sustainable food grain production under extreme environment, it is important to understand the physiological and biochemical mechanism of root development. Moreover, it is imperative to establish a resilient root system in rice cultivation in order to mitigate the overuse of chemical fertilizers, enhance nutrient efficiency, and improve climate resilience of the plant