Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation

We present the results of a study of the energy spectrum of the ground state and the low-lying excited states for shallow donors in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite layers of Ga_(1-x)Al_(x)As. The effect of the position of the impurity atom within central GaAs slab is investigated for different slab thicknesses and alloy compositions. Two limiting cases are presented: one in which the impurity atom is located at the center of the quantum well (on-center impurity), the other in which the impurity atom is located at the edge of the quantum well (on-edge impurity). Both the on-center and the on-edge donor ground state are bound for all values of GaAs slab thicknesses and alloy compositions. The alloy composition x is varied between 0.1 and 0.4. In this composition range, Ga_(1-x)Al_(x)As is direct, and the single-valley effective-mass theory is a valid technique for treating shallow donor states. Calculations are carried out in the case of finite potential barriers determined by realistic conduction-band offsets

Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions

We present here a study on the transport characteristics of L‐point and Γ‐point derived electrons through abrupt GaAs–Ga_(1−x)Al_xAs–GaAs(111) double heterojunctions. The use of complex‐k band structures in the tight‐binding approximation and transfer matrices provide a reasonably accurate description of the wave function at the GaAs–Ga_(1−x)Al_xAs interface. A representation of the wave function in terms of bulk complex‐k Bloch states is used in the GaAs regions where the potential is bulklike. A representation of the wave function in terms of planar orbitals is used in the central Ga_(1−x)Al_xAs region where the potential deviates from its bulk value (i.e., interfacial region). Within this theoretical framework, realistic band structure effects are taken into account and no artificial rules regarding the connection of the wave function across the interface are introduced. The ten‐band tight‐binding model includes admixture in the total wave function of states derived from different extrema of the GaAs conduction band. States derived from the same extremum of the conduction band appear to couple strongly to each other, whereas states derived from different extrema are found to couple weakly. Transport characteristics of incoming L‐point and Γ‐point Bloch states are examined as a function of the energy of the incoming state, thickness of the Ga_(1−x)Al_xAs barrier, and alloy composition x. Transmission through the Ga_(1−x)Al_xAs barrier is either tunneling or propagating depending on the nature of the Bloch states available for strong coupling in the alloy. Since Bloch states derived from different extrema of the conduction band appear to couple weakly to each other, it seems possible to reflect the low velocity L‐point component of the current while transmitting the high velocity Γ‐point component

Small band gap superlattices as intrinsic long wavelength infrared detector materials

Intrinsic long wavelength (lambda greater than or equal to 10 microns) infrared (IR) detectors are currently made from the alloy (Hg, Cd)Te. There is one parameter, the alloy composition, which can be varied to control the properties of this material. The parameter is chosen to set the band gap (cut-off wavelength). The (Hg, Cd)Te alloy has the zincblend crystal structure. Consequently, the electron and light-hole effective masses are essentially inversely proportional to the band gap. As a result, the electron and light-hole effective masses are very small (M sub(exp asterisk)/M sub o approx. M sub Ih/M sub o approx. less than 0.01) whereas the heavy-hole effective mass is ordinary size (M sub hh(exp asterisk)/M sub o approx. 0.4) for the alloy compositions required for intrinsic long wavelength IR detection. This combination of effective masses leads to rather easy tunneling and relatively large Auger transition rates. These are undesirable characteristics, which must be designed around, of an IR detector material. They follow directly from the fact that (Hg, Cd)Te has the zincblend crystal structure and a small band gap. In small band gap superlattices, such as HgTe/CdTe, In(As, Sb)/InSb and InAs/(Ga,In)Sb, the band gap is determined by the superlattice layer thicknesses as well as by the alloy composition (for superlattices containing an alloy). The effective masses are not directly related to the band gap and can be separately varied. In addition, both strain and quantum confinement can be used to split the light-hole band away from the valence band maximum. These band structure engineering options can be used to reduce tunneling probabilities and Auger transition rates compared with a small band gap zincblend structure material. Researchers discuss the different band structure engineering options for the various classes of small band gap superlattices

Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field

We present our first theoretical study of the electronic properties of superlattices formed from semimagnetic semiconductors. Both Cd0.8Mn0.2Te/Cd0.7Mn0.3Te and Hg0.95Mn0.05Te/ Cd0.78Mn0.22Te systems are considered explicitly. Magnetic field splittings are calculated with and without the exchange interaction. We find that the exchange interaction dominates the magnetic effects in the wide-gap Cd0.8Mn0.2Te/Cd0.7Mn0.3Te system while the Landau level shift is also important in the Hg0.95Mn0.05Te/ Cd0.78Mn0.22Te system. We present calculations of the superlattice band-gap variation with temperature and its derivative with magnetic field as a function of the superlattice layer thickness. Variation of the band offset in determining the values of the various quantities is examined

k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field

We present a k⋅p theory of semiconductor superlattices in an applied magnetic field. We consider superlattices with a [001] growth axis and the magnetic field along the growth axis. A single-basis set for the constituent materials is provided by a zone-center pseudopotential calculation with a reference Hamiltonian. The Γ15 valence and Γ1 conduction states are coupled with a spinor and treated explicitly. Nearby energy states are treated in Löwdin perturbation theory with the k⋅p operator and the difference between the material pseudopotential and the reference pseudopotential as the perturbation. The calculation is carried out consistently to first order in wave functions and second order in energies. Magnetic, exchange (in semimagnetic materials), spin-orbit, and strain (in strained-layer superlattices) interactions are included between the explicitly included states. When inversion-asymmetry and warping terms are dropped in the Hamiltonian, a Landau index becomes a good quantum number. Bloch and evanescent states are computed for a fixed Landau index in each material. Interface matching of the constituent-material bulk eigenfunctions is accomplished with use of results derived for the normal component of the current density operator. The Landau indices are not mixed by the interface matching. Superlattice translational symmetry is used to derive an eigenvalue equation for the superlattice wave vectors and eigenfunctions. The numerical implementation of the formal results is described and used to investigate a nonmagnetic superlattice Ga0.47In0.53As/Al0.48In0.52As and a semimagnetic superlattice Hg0.95Mn0.05Te/Cd0.78Mn0.22Te

Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices

High-resolution 3-D imaging of surface damage sites in fused silica with Optical Coherence Tomography

In this work, we present the first successful demonstration of a non-contact technique to precisely measure the 3D spatial characteristics of laser induced surface damage sites in fused silica for large aperture laser systems by employing Optical Coherence Tomography (OCT). What makes OCT particularly interesting in the characterization of optical materials for large aperture laser systems is that its axial resolution can be maintained with working distances greater than 5 cm, whether viewing through air or through the bulk of thick optics. Specifically, when mitigating surface damage sites against further growth by CO{sub 2} laser evaporation of the damage, it is important to know the depth of subsurface cracks below the damage site. These cracks are typically obscured by the damage rubble when imaged from above the surface. The results to date clearly demonstrate that OCT is a unique and valuable tool for characterizing damage sites before and after the mitigation process. We also demonstrated its utility as an in-situ diagnostic to guide and optimize our process when mitigating surface damage sites on large, high-value optics

In-situ monitoring of surface post-processing in large aperture fused silica optics with Optical Coherence Tomography

Optical Coherence Tomography is explored as a method to image laser-damage sites located on the surface of large aperture fused silica optics during post-processing via CO{sub 2} laser ablation. The signal analysis for image acquisition was adapted to meet the sensitivity requirements for this application. A long-working distance geometry was employed to allow imaging through the opposite surface of the 5-cm thick optic. The experimental results demonstrate the potential of OCT for remote monitoring of transparent material processing applications

Pressure-induced metallization in solid boron

Different phases of solid boron under high pressure are studied by first principles calculations. The $\alpha$-B$_{12}$ structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero around 160 GPa, where the material transforms to a weak metal. The metallicity, as measured by the density of states at the Fermi level, enhances as the pressure is further increased. The pressure-induced metallization can be attributed to the enhanced boron-boron interactions that cause bands overlap. These results are consist with the recently observed metallization and the associated superconductivity of bulk boron under high pressure (M.I.Eremets et al, Science{\bf 293}, 272(2001)).Comment: 14 pages, 5 figure