Layered, Tunable Graphene Oxide-Nylon Heterostructures for Wearable Electrocardiogram Sensors

Nanoscale engineered materials combined with wearable wireless technologies can deliver a new level of health monitoring. A reduced graphene oxide-nylon composite material is developed and tested, demonstrating its usefulness as a material for sensors in wearable, long-term electrocardiogram (ECG) monitoring via a comparison to one of the widely used ECG sensors. The structural analysis by scanning electron (SEM) and atomic force microscopy (AFM) shows a limited number of defects on a macroscopic scale. Fourier Transform Infrared (FTIR) and Raman spectroscopy confirm the presence of rGOx, and the ratio of D- and G-features as a function of thickness correlates with the resistivity analysis. The negligible effect of the defects and the tunability of electrical and optical properties, together with live ECG data, demonstrate its signal transduction capability.Comment: 7 main text and 4 supporting figures, under revie

High-Flux, Antifouling Hydrophilized Ultrafiltration Membranes with Tunable Charge Density Combining Sulfonated Poly(ether sulfone) and Aminated Graphene Oxide Nanohybrid

In this work, a new protocol was developed for creating charge-tuned, hydrophilic hybrid ultrafiltration (UF) membranes with high flux, rejection rate, and fouling resistance. The membranes were fabricated using a combination of sulfonated poly(ether sulfone) (SPES) and aminated graphene (GO-SiO -NH ) nanohybrid via the non-solvent-induced phase separation (NIPS) method. The GO-SiO -NH nanohybrid was first synthesized using GO nanosheets and 3-aminopropyl triethoxysilane (APTES) through the covalent condensation reaction at 80 °C and was thoroughly characterized. Then, 2-8 wt% of the nanohybrid was incorporated into the matrix of SPES for the fabrication of the hybrid membranes. The resulting membranes were characterized using an electrokinetic analyzer, a contact angle goniometer, and Raman, field emission scanning electron microscopy-energy-dispersive X-ray spectrometry (FESEM-EDX), and atomic force microscopy experiments. The porosity, charge density, and surface morphology were altered, and the hybrid membranes became more hydrophilic after the incorporation of the nanohybrid. The pure water flux of the hybrid membranes systematically increased with the loading amount of the nanohybrid. The pure water flux of the hybrid membrane containing 6 wt% GO-SiO -NH nanohybrid at a 2 bar feed pressure was 537 L m h , about 3-fold that of pristine membrane (186 L m h ). The fouling resistance of the hybrid membranes was evaluated and confirmed using several representative foulants, including bovine serum albumin, humic acid, sodium alginate, and a synthetic solution of natural organic matter (NOM). The fabricated membranes were capable of removing more than 97% of NOM, without a compromise of their rejection rate

A low-cost, nanowatt, millimeter-scale memristive-vacuum sensor

This work demonstrates a low-power, light-weight, and cost-efficient vacuum pressure sensor and air leak detector based on 2 mm ×2 mm Cu/HfO2/ p^+ -Si memristor device. The operating principle of the proposed sensor relies on monitoring the off-state resistance ( R_off ) of the device, wherein the experimental results show that the R_off value is inversely proportional to the vacuum pressure. The fabricated sensors demonstrated a sensitivity of 493 Torr-1 and power consumption as low as ∼ 8 nW, when tested in a wide range of sub-atmospheric pressure ( 4.9× 10^-5 - 760 ) Torr, making them highly suitable for low-power applications. Furthermore, it is shown that the sensor can be integrated with a microcontroller-based circuitry to serve as a standalone sensing system.</p

Novel secret key generation techniques using memristor devices

This paper proposes novel secret key generation techniques using memristor devices. The approach depends on using the initial profile of a memristor as a master key. In addition, session keys are generated using the master key and other specified parameters. In contrast to existing memristor-based security approaches, the proposed development is cost effective and power efficient since the operation can be achieved with a single device rather than a crossbar structure. An algorithm is suggested and demonstrated using physics based Matlab model. It is shown that the generated keys can have dynamic size which provides perfect security. Moreover, the proposed encryption and decryption technique using the memristor based generated keys outperforms Triple Data Encryption Standard (3DES) and Advanced Encryption Standard (AES) in terms of processing time. This paper is enriched by providing characterization results of a fabricated microscale Al/TiO2/Al memristor prototype in order to prove the concept of the proposed approach and study the impacts of process variations. The work proposed in this paper is a milestone towards System On Chip (SOC) memristor based security

MemSens: Memristor-Based Radiation Sensor

© 2001-2012 IEEE. Resistive random-access memory (RRAM) technology has been gaining importance due to scalability, low power, non-volatility, and the ability to perform in-memory computing. The RRAM sensing applications have also emerged to enable single RRAM technology platforms which include sensing, data storage, and computing. This paper reports on sol-gel drop coated low-power μ -thick Ag/TiO2/Cu memristor, named MemSens, developed for radiation sensing. MemSens exhibits a bipolar memristive switching behavior within a small voltage window, ranging up to +0.7 V for the turn-ON, and down to -0.2 V for the turn-OFF. Under these operating conditions, MemSens has 67% less switching voltage, 20% drop in ON switching current, 75% reduced active area and \u3e 3x improved device endurance, compared to the best characteristics reported in the literature for μ -thick memristors. The device is tested under direct exposure to ionizing Cs-137 662keV γ -rays, during which a significant increase in the electrical conductivity of the device is observed. MemSens circuit is proposed to allow a relatively real time and cost-effective radiation detection. This provides a first insight to the advancement of reliable memristors that could potentially be deployed in future low-power radiation sensing technologies for medical, personal protection, and other field applications

Subthreshold Continuum Conductance Change in NbO Pt Memristor Interfaces

Bioinspired semiconductor-based devices with adaptive and dynamic properties will have many advantages over conventional static digital silicon-based technologies. The ability to compute, process, and retain information in parallel, without referencing other circuit elements, offers enhanced speed, storage density, energy efficiency, and functionality benefits. A novel crossbar microwire-based device consisting of Nb/NbO/Pt structure that exhibits neural synapse-like adaptive conductivity (i.e., synaptic plasticity) is presented. The neuromorphic memristive junction, formed at the interface between the Pt metal wire and the thermally annealed core–shell Nb–NbO wire, demonstrates 1000 times conductivity change with an effective continuum of resistance levels. The device can also be fully activated to display standard resistance switching between two states. In the subthreshold regime, the voltage flux applied through the ∼400 nm thick NbO junction is shown to have a linear relationship to the charge produced within the device. The conductance value G is a function of the total flux history applied. The linear flux–charge relationship is exploited to demonstrate the voltage–pulse invariance. This suggests that only the integrated flux produced during a voltage–pulse application determines the charge generated within the junction, regardless of the operational parameters like voltage amplitude and time interval. Variation in current onset voltage as a function of flux is discussed with reference to carrier extraction at the intrinsically doped metal–semiconductor interface. The observed flux invariance has implications in emerging neuromorphic semiconductor hardware. Enabling pulse stimuli to be designed to have equal flux through the device from nonvoltage sources such as light may increase functionality in bioinspired computing and applications

Cu, Sm co-doping effect on the CO oxidation activity of CeO₂. A combined experimental and density functional study

The co-doping effect of a rare earth (RE) metal and a transition metal (TM) on ceria oxidation catalysis through the evaluation of samarium-copper co-doped catalysts with Ce-Sm-xCu-O (x: 0–20 at.%, Ce/Sm = 1) nominal compositions, is discussed. The CO oxidation reaction was used as a prototype reaction due to its pivotal role in the fuel cell technology. Ce-Sm-20Cu-O catalyst presented a 64% increase in the CO oxidation activity compared to that of pristine ceria. Diffraction and Raman studies proved that the Cu, Sm co-doping induces many defects related to the dopants (Sm, Cu) and the oxygen vacant sites, while the presence of hybrid CuO/Ce-Sm(Cu)-O fluorite/SmO8 (cubic metastable) phases is the most representative scenario of this oxide microstructure. A size polydispersity of CuO phases was achieved by introducing air cooling during the microwave heating. Cu, Sm atoms were uniformly doped in CeO2 structure according to the HAADF-STEM studies. These results are in agreement with EDS analysis, where Cu, Sm and Ce are located in all the analyzed areas without any preferential distribution. The XPS studies demonstrated the co-presence of Cu2+/Cu1+ and Ce4+/Ce3+ redox couples in agreement with the Bader charge analysis from the ab initio calculations, the latter influencing greatly the oxidation activity of the catalysts. Density functional theory (DFT) calculations shed light on the oxide surface and the underlying mechanism governing the oxidation catalysis taking place. In particular, Cu2+ and Sm3+ dopants were found to be located in the nearest neighbor (NN) sites of oxygen vacancies. Different oxygen vacancies configurations were studied (single vs. double, surface vs. subsurface), where the single vacancies are more stable on the surface, whereas the double vacancies configurations are more stable on the subsurface. Regarding the Ce3+ location, in the presence of single and double oxygen vacancy, the Ce3+ ions prefer to be located in the 1st NN/2nd NN and 2nd NN of the first Ce layer, relative to the oxygen vacancy, respectively. The total Density of States (DOS) analysis of the co-doped systems revealed that the dopants induced new surface states inside the ceria band gap, which can accommodate the unpaired electrons of the vacant oxygen sites. These electronic modifications justify the much lower energy of oxygen vacancy formation (Evf) in both cases, the Sm-doped, and Cu, Sm -doped CeO2 (1 1 1) geometries. Specifically, the Evf lowering upon doping was found to be almost two times larger for the Cu adjacent oxygen vacancies (Cu2+-□) compared to the Sm ones (Sm3+-□), consistent with the CO adsorption trend as the Cu-Sm-CeO2 (1 1 1) system is energetically more favorable than the Sm-CeO2 (1 1 1) and pure CeO2 (1 1 1) surfaces

Cu-Ce-La-Ox as efficient CO oxidation catalysts: effect of Cu content

Nanograins of Ce-La-xCu-O oxides, of 16 nm2 area size, are tested as materials towards the CO oxidation . Preservation of the cubic lattice structure following La3+ and Cu2+ metal cations doping is confirmed based on the powder X-ray diffraction and Raman studies. From XPS, the presence of mixed Ce3+/Ce4+ and Cu2+/Cu1+ oxidation states was confirmed, which was more profound in the low Cu-content Ce-La-xCu-O catalysts. Cu increases the concentration of oxygen vacant sites in the doped-CeO2 according to the Raman intensity ratio IOv/IF2g of 1.58 and 1.78 with the increase in copper content from 7 to 20 at.% as compared to the lower value of 0.44 for the Ce-La. The mobility of the surface and bulk lattice oxygen is further investigated using 16O/18O isotopic exchange (TIIE), and is found to be Cu at.% dependent. For the case of Ce-La-20Cu, the participation of the lattice oxygen (OL) in the reaction mechanism has been demonstrated using transient experiments. Accordingly, the specific rate (μmol CO m-2s-1) of the CO oxidation reaction is found to be higher for the Ce-La-20Cu and Ce-La-7Cu catalysts, corroborating thus the presence of more mobile/labile oxygen species in those ternary catalysts as opposed to the other lower copper compositions

Design Aspects of Doped CeO2 for Low-Temperature Catalytic CO Oxidation: Transient Kinetics and DFT Approach

CO elimination through oxidation over highly active and cost-effective catalysts is a way forward for many processes of industrial and environmental importance. In this study, doped CeO2 with transition metals (TM = Cu, Co, Mn, Fe, Ni, Zr, and Zn) at a level of 20 at. % was tested for CO oxidation. The oxides were prepared using microwave-assisted sol–gel synthesis to improve catalyst’s performance for the reaction of interest. The effect of heteroatoms on the physicochemical properties (structure, morphology, porosity, and reducibility) of the binary oxides M–Ce–O was meticulously investigated and correlated to their CO oxidation activity. It was found that the catalytic activity (per gram basis or TOF, s–1) follows the order Cu–Ce–O > Ce–Co–O > Ni–Ce–O > Mn–Ce–O > Fe–Ce–O > Ce–Zn–O > CeO2. Participation of mobile lattice oxygen species in the CO/O2 reaction does occur, the extent of which is heteroatom-dependent. For that, state-of-the-art transient isotopic 18O-labeled experiments involving 16O/18O exchange followed by step-gas CO/Ar or CO/O2/Ar switches were used to quantify the contribution of lattice oxygen to the reaction. SSITKA-DRIFTS studies probed the formation of carbonates while validating the Mars–van Krevelen (MvK) mechanism. Scanning transmission electron microscopy-high-angle annular dark field imaging coupled with energy-dispersive spectroscopy proved that the elemental composition of dopants in the individual nanoparticle of ceria is less than their composition at a larger scale, allowing the assessment of the doping efficacy. Despite the similar structural features of the catalysts, a clear difference in the Olattice mobility was also found as well as its participation (as expressed with the α descriptor) in the reaction, following the order αCu > αCo> αMn > αZn. Kinetic studies showed that it is rather the pre-exponential (entropic) factor and not the lowering of activation energy that justifies the order of activity of the solids. DFT calculations showed that the adsorption of CO on the Cu-doped CeO2 surface is more favorable (−16.63 eV), followed by Co, Mn, Zn (−14.46, −4.90, and −4.24 eV, respectively), and pure CeO2 (−0.63 eV). Also, copper compensates almost three times more charge (0.37e −) compared to Co and Mn, ca. 0.13e − and 0.10e −, respectively, corroborating for its tendency to be reduced. Surface analysis (X-ray photoelectron spectroscopy), apart from the oxidation state of the elements, revealed a heteroatom–ceria surface interaction (Oa species) of different extents and of different populations of Oa species