Significant THz absorption in CH3NH2 molecular defect-incorporated organic-inorganic hybrid perovskite thin film

The valid strong THz absorption at 1.58 THz was probed in the organic-inorganic hybrid perovskite thin film, CH3NH3PbI3, fabricated by sequential vacuum evaporation method. In usual solution-based methods such as 2-step solution and antisolvent, we observed the relatively weak two main absorption peaks at 0.95 and 1.87 THz. The measured absorption spectrum is analyzed by density-functional theory calculations. The modes at 0.95 and 1.87 THz are assigned to the Pb-I vibrations of the inorganic components in the tetragonal phase. By contrast, the origin of the 1.58 THz absorption is due to the structural deformation of Pb-I bonding at the grain boundary incorporated with a CH3NH2 molecular defect

Comprehensive understanding and controlling the defect structures: an effective approach for organic-inorganic hybrid perovskite-based solar-cell application

Understanding the defect structure in organic-inorganic hybrid perovskite material (OHP) is a crucial role to explain several physical properties such as material stability, energy band, carrier mobility, and so on. In the solar-cell applications using OHP, finding, understanding, and controlling defects is essential to making a more advanced device with high efficiency and stability. Naturally, we need to find, understand, and control the possible defects in OHP. However, the defect research field in OHP material is just beginning now. In this short review, we will explore the kinds of defects and their effects on OHP

Ultrafast zero balance of the oscillator-strength sum rule in graphene

Oscillator-strength sum rule in light-induced transitions is one general form of quantum-mechanical identities. Although this sum rule is well established in equilibrium photo-physics, an experimental corroboration for the validation of the sum rule in a nonequilibrium regime has been a long-standing unexplored question. The simple band structure of graphene is an ideal system for investigating this question due to the linear Dirac-like energy dispersion. Here, we employed both ultrafast terahertz and optical spectroscopy to directly monitor the transient oscillator-strength balancing between quasi-free low-energy oscillators and high-energy Fermi-edge ones. Upon photo-excitation of hot Dirac fermions, we observed that the ultrafast depletion of high-energy oscillators precisely complements the increased terahertz absorption oscillators. Our results may provide an experimental priori to understand, for example, the intrinsic free-carrier dynamics to the high-energy photo-excitation, responsible for optoelectronic operation such as graphene-based phototransistor or solar-energy harvesting devices. © 2013 Macmillan Publishers Limited. All rights reserved.1761sciescopu

Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime

Unique phonon modes of a CH3NH3PbBr3 hybrid perovskite film without the influence of defect structures: an attempt toward a novel THz-based application

The exploration of new physical properties for various THz-based applications, such as THz-wave sensing, modulation, and imaging devices, is a key challenge in the research on organic–inorganic hybrid perovskite materials. These THz-based applications require satisfactory, sensitive, and stable absorption properties with values between 0.5 and 3 THz. To achieve these properties, candidate materials should possess a purified structure that induces regular and fixed phonon modes without any defects or impurities. CHNHPbBr, an organic–inorganic hybrid perovskite thin film produced by a sequential vacuum evaporation method on a flexible PET substrate, was investigated in this study. Although the thin film contains only molecular defects related to CHNH incorporated into the perovskite structure, our THz-wave absorption measurement and first-principles simulation confirmed that these molecular defects do not influence the three phonon modes originating from the transverse vibration (0.8 THz), the longitudinal optical vibrations (1.4 THz) of the Pb–Br–Pb bonds, and the optical Br vibration (2.0 THz). After spin-casting an ultrathin PTAA polymer protective layer (5 nm) on the hybrid perovskite thin film, it was additionally observed that there was no significant effect on the phonon modes. Thus, this novel flexible organic–inorganic hybrid perovskite material is a potential candidate for THz-based applications

Strong linear correlation between CH3NH2 molecular defect and THz-Wave absorption in CH3NH3PbI3 hybrid perovskite thin film

To control the density of a CHNH molecular defect, which strongly contributed to a significant THz-wave absorption property in the CH3NH3PbI3 hybrid perovskite thin film formed by the sequential vacuum evaporation method, we performed post-annealing processes with various temperatures and times. In the thin film after post-annealing at 110 °C for 45 min, the density of the CHNH molecular defect was minimized, and CH3NH3I and PbI disappeared in the thin film after the post-annealing process at 150 °C for 30 min. However, the density of the CHNH molecular defect increased. Moreover, the THz-wave absorption property for each thin film was obtained using a THz time-domain spectroscopy to understand the correlation between the density of a molecular defect and the THz-wave oscillation strength at 1.6 THz, which originated in the molecular defect-incorporated hybrid perovskite structure. There is a strong linear correlation between the oscillator strength of a significant THz-wave absorption at 1.6 THz and the CHNH molecular defect density

Strong emission of THz radiation from GaAs microstructures on Si

Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications