On-The-Fly Observing System of the Nobeyama 45-m and ASTE 10-m Telescopes

We have developed spectral line On-The-Fly (OTF) observing mode for the Nobeyama Radio Observatory 45-m and the Atacama Submillimeter Telescope Experiment 10-m telescopes. Sets of digital autocorrelation spectrometers are available for OTF with heterodyne receivers mounted on the telescopes, including the focal-plane 5 x 5 array receiver, BEARS, on the 45-m. During OTF observations, the antenna is continuously driven to cover the mapped region rapidly, resulting in high observing efficiency and accuracy. Pointing of the antenna and readouts from the spectrometer are recorded as fast as 0.1 second. In this paper we report improvements made on software and instruments, requirements and optimization of observing parameters, data reduction process, and verification of the system. It is confirmed that, using optimal parameters, the OTF is about twice as efficient as conventional position-switch observing method.Comment: 11 pages, 13 figures, accepted for publication in PAS

Impact of number of functional teeth on independence of Japanese older adults

Aim To examine the relationship between the number of present and functional teeth at baseline and future incidence of loss of independence. Methods Participants were community-dwelling older individuals who participated in a comprehensive geriatric health examination conducted in Kusatsu town, Japan, between 2009 and 2015. The primary endpoint was the incidence of loss of independence among participants, defined as the first certification of long-term care insurance in Japan. The numbers of present and functional teeth at baseline were determined via an oral examination. Demographics, clinical variables (e.g., history of chronic diseases and psychosocial factors), blood nutritional markers, physical functions, and perceived masticatory function were assessed. Results This study included 1121 individuals, and 205 individuals suffered from loss of independence during the follow-up period. Kaplan–Meier estimates of loss of independence for participants with smaller numbers of present and functional teeth were significantly greater than for those with larger numbers of teeth. Cox proportional hazard analyses indicated that a smaller number of present teeth was not a significant risk factor after adjusting for demographic characteristics. However, the number of functional teeth was a significant risk factor after the adjustment (hazard ratio: 1.975 [1.168–3.340]). Additionally, higher hazard ratios were observed in other adjusted models, but they were not statistically significant. Conclusions The number of functional teeth may be more closely related to the future incidence of loss of independence than the number of present teeth. This novel finding suggests that prosthodontic rehabilitation for tooth loss possibly prevents the future incidence of this life-event

Application of Push-Pull Control Slipping Clutch to the Marine Propulsion System

The use of an electronically controlled slipping clutch is gradually increasing for a marine propulsion system. This system can provide a continuous change of propeller revolution even in a lower revolution zone of prime mover. However, it hardy make the decelerating condition, because the slipping clutch itself can not make the negative torque. In this paper, the authors have designed a push-pull control system using two slipping clutches in order to improve the above disadvantage of the conventional slipping clutch. For the evaluation of this system, the whole propulsion system including prime mover, clutches, propeller and ship are numerically simulated using the precise mathematical model described here. From several accelerating and decelerating simulations, the following results are pointed out. 1) FPP’s revolution can be easily changed in the slipping zone by using this system, although the main engine is governed constant revolution. 2) Astern and ahead maneuvering is also performed by this system. 3) The mathematical model for this simulation including engine, clutch, propeller and ship is useful for the design and evaluation of the whole propulsion system. As the result, this push-pull controlled slipping clutch system will be very useful for a marine propulsion system.第6回舶用機関国際シンポジウム ISME (International Symposium on Marine Engineering) Tokyo 2000, 場所：日本都市センター会館, 会期：10月23日-27

Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples

A new fabrication technique to prepare ultrathin barrier layers for nanoscale Cu wires was proposed in our previous studies. Ti-rich layers formed at Cu(Ti)/dielectric layer interfaces consisted of crystalline TiC or TiSi and amorphous Ti oxides. The primary control factor for the Ti-rich interface layer composition was C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds. To investigate Ti-rich interface layer growth in Cu(Ti)/dielectric layer samples annealed in ultrahigh vacuum, Rutherford backscattering spectrometry (RBS) was employed in the present study. Ti peaks were obtained only at the interfaces for all samples. Molar amounts of Ti atoms segregated to the interfaces (n) were estimated from Ti peak areas. Log n values were proportional to log t values. Slopes were similar for all samples, suggesting similar growth mechanisms. The activation energy (E) for Ti atoms reacting with the dielectric layers containing carbon (except SiO2) tended to decrease with decreasing C concentration (decreasing k), while those for the SiO2 layers were much higher. Reaction rate coefficients [Z · exp(−E/RT)] were insensitive to C concentration in the dielectric layers. These factors lead to the conclusion that growth of the Ti-rich interface layers is controlled by chemical reactions, represented by the Z and E values, of the Ti atoms with the dielectric layers, although there are a few diffusion processes possible

Cultivar differences in nitrogen use efficiency of rice

We investigated the effects of fertilizer-free and fertilizer-applied cultivation on growth, yield and nitrogen (N) utilization of rice cultivars in our Kurashiki paddy fields (Institute of Plant Science and Resources, Okayama Univ.), which have been cultivated without fertilizer since 1970, and also in our Okayama paddy fields, which are conventionally cultivated. In 2001, the cultivars Nipponbare (NIP) and Nourin 18 (N18) were cultivated in the Kurashiki fields, with a “0N plot” (no fertilizer application), a “1N plot” (standard fertilizer application), and a “2N plot” (double fertilizer application). In 2002, five cultivars were grown without fertilizer in the Kurashiki fields, and 51cultivars were tested in 0N and 1N plots in the Okayama fields. Yield (2001) in the Kurashiki fields was higher in the 0N plot for N18 (379g m–2), which had a higher number of spikelets per m2, than NIP (300 g m–2), while in the 1N and 2N plots it was higher for NIP, which had a higher percentage of ripening, and N18 had high yield potential even without fertilizer application, but low fertilizer tolerance. The differences in yield were related to N-uptake (NU), and the differences in N use efficiency (NUE, yield/NU) between cultivars were small. The pot experiment showed that the yield of 0N plot was higher for N18 than NIP grown in Kurashiki soil because of the higher number of spikelets per hill, and the yield in the Okayama soil was higher than that in the Kurashiki soil. Long-term non-fertilized soils are of poor soil fertility, which also decreases the NUE, and the NUE of N18 is higher than that of NIP under isolated conditions. The difference in yields is closely related to sink capacity (SC). In 2002, yields in the Kurashiki fields were highest in Takanari (TAK, 494g m–2) and lowest in NIP (350g m–2), and differences in yields were closely related to SC. NUE was highest in TAK (68.6) and lowest in Akebono (48.1). TAK had high NUE and high sink production efficiency (SPE, SC/NU), while N18 had low NUE but high SC due to higher NU, ensuring high yield even under unfertilized cultivation. Yields in the 0N and 1N plots cultivated in 2002 varied between 244–631g m–2 and 199–769g m–2, respectively. A close positive correlation was observed between yield and SC, and between NU and SC, suggesting that the SC through NU is involved in determining yield. A positive correlation was also observed between NUE and yield. It was found that yield increased with an increase in NUE, and that NUE decreased although yield increased with fertilizer application. Through selection of cultivars with high SPE, it is expected that it will be possible to breed low-input, high-yielding cultivars with high NUE in the future

Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples

A new fabrication technique to prepare ultrathin barrier layers for nanoscale Cu wires was proposed in our previous studies. Ti-rich layers formed at Cu(Ti)/dielectric layer interfaces consisted of crystalline TiC or TiSi and amorphous Ti oxides. The primary control factor for the Ti-rich interface layer composition was C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds. To investigate Ti-rich interface layer growth in Cu(Ti)/dielectric layer samples annealed in ultrahigh vacuum, Rutherford backscattering spectrometry (RBS) was employed in the present study. Ti peaks were obtained only at the interfaces for all samples. Molar amounts of Ti atoms segregated to the interfaces (n) were estimated from Ti peak areas. Log n values were proportional to log t values. Slopes were similar for all samples, suggesting similar growth mechanisms. The activation energy (E) for Ti atoms reacting with the dielectric layers containing carbon (except SiO2) tended to decrease with decreasing C concentration (decreasing k), while those for the SiO2 layers were much higher. Reaction rate coefficients [Z · exp(−E/RT)] were insensitive to C concentration in the dielectric layers. These factors lead to the conclusion that growth of the Ti-rich interface layers is controlled by chemical reactions, represented by the Z and E values, of the Ti atoms with the dielectric layers, although there are a few diffusion processes possible