250 research outputs found
Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
We report on a comprehensive combined experimental and theoretical study of
Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad
agreement between theoretical expectations and measured data allows us to
conclude that T_c in high-quality metallic samples increases linearly with the
number of uncompensated local moments on Mn_Ga acceptors, with no sign of
saturation. Room temperature ferromagnetism is expected for a 10% concentration
of these local moments. Our magnetotransport and magnetization data are
consistnent with the picture in which Mn impurities incorporated during growth
at interstitial Mn_I positions act as double-donors and compensate neighboring
Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I
antiferromagnetic coupling. These defects can be efficiently removed by
post-growth annealing. Our analysis suggests that there is no fundamental
obstacle to substitutional Mn_Ga doping in high-quality materials beyond our
current maximum level of 6.2%, although this achievement will require further
advances in growth condition control. Modest charge compensation does not limit
the maximum Curie temperature possible in ferromagnetic semiconductors based on
(Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
A combination of high-resolution x-ray diffraction and a new technique of
x-ray standing wave uorescence at grazing incidence is employed to study the
structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during
post-growth annealing steps. We find that the film is formed by a uniform,
single crystallographic phase epilayer covered by a thin surface layer with
enhanced Mn concentration due to Mn atoms at random non-crystallographic
positions. In the epilayer, Mn incorporated at interstitial position has a
dominant effect on lattice expansion as compared to substitutional Mn. The
expansion coeffcient of interstitial Mn estimated from our data is consistent
with theory predictions. The concentration of interstitial Mn and the
corresponding lattice expansion of the epilayer are reduced by annealing,
accompanied by an increase of the density of randomly distributed Mn atoms in
the disordered surface layer. Substitutional Mn atoms remain stable during the
low-temperature annealing.Comment: 9 pages, 9 figure
Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
We report on a systematic study of optical properties of (Ga,Mn)As epilayers
spanning the wide range of accessible substitutional Mn_Ga dopings. The growth
and post-growth annealing procedures were optimized for each nominal Mn doping
in order to obtain films which are as close as possible to uniform
uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the
mid-infrared absorption spectra whose position exhibits a prevailing blue-shift
for increasing Mn-doping. In the visible range, a peak in the magnetic circular
dichroism blue shifts with increasing Mn-doping. These observed trends confirm
that disorder-broadened valence band states provide a better one-particle
representation for the electronic structure of high-doped (Ga,Mn)As with
metallic conduction than an energy spectrum assuming the Fermi level pinned in
a narrow impurity band.Comment: 22 pages, 14 figure
Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in
(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and
reflects the dependence of the tunneling density of states in a ferromagnetic
layer on orientation of the magnetic moment. Based on ab initio relativistic
calculations of the anisotropy in the density of states we predict sizable TAMR
effects in room-temperature metallic ferromagnets. This opens prospect for new
spintronic devices with a simpler geometry as these do not require
antiferromagnetically coupled contacts on either side of the tunnel junction.
We focus on several model systems ranging from simple hcp-Co to more complex
ferromagnetic structures with enhanced spin-orbit coupling, namely bulk and
thin film L1-CoPt ordered alloys and a monatomic-Co chain at a Pt surface
step edge. Reliability of the predicted density of states anisotropies is
confirmed by comparing quantitatively our ab initio results for the
magnetocrystalline anisotropies in these systems with experimental data.Comment: 4 pages, 2 figure
The period-gap cataclysmic variable CzeV404 Her: A link between SW Sex and SU UMa systems
Context: We present a new study of the eclipsing cataclysmic variable CzeV404
Her (Porb = 0.098 d) that is located in the period gap. Aims: This report
determines the origin of the object and the system parameters and probes the
accretion flow structure of the system. Methods: We conducted simultaneous
time-resolved photometric and spectroscopic observations of CzeV404 Her. We
applied our light-curve modelling techniques and the Doppler tomography method
to determine the system parameters and analyse the structure of the accretion
disk. Results: We found that the system has a massive white dwarf M_WD =
1.00(2) M_sun a mass ratio of q = 0.16, and a relatively hot secondary with an
effective temperature T_2 = 4100(50) K. The system inclination is i =
78.8{\deg}. The accretion disk spreads out to the tidal limitation radius and
has an extended hot spot or line region. The hot spot or line is hotter than
the remaining outer part of the disk in quiescence or in intermediate state,
but does not stand out completely from the disk flux in (super)outbursts.
Conclusions: We claim that this object represents a link between two distinct
classes of SU UMa-type and SW Sex-type cataclysmic variables. The accretion
flow structure in the disk corresponds to the SW Sex systems, but the physical
conditions inside the disk fit the behaviour of SU UMa-type objects
Theory of ferromagnetic (III,Mn)V semiconductors
The body of research on (III,Mn)V diluted magnetic semiconductors initiated
during the 1990's has concentrated on three major fronts: i) the microscopic
origins and fundamental physics of the ferromagnetism that occurs in these
systems, ii) the materials science of growth and defects and iii) the
development of spintronic devices with new functionalities. This article
reviews the current status of the field, concentrating on the first two, more
mature research directions. From the fundamental point of view, (Ga,Mn)As and
several other (III,Mn)V DMSs are now regarded as textbook examples of a rare
class of robust ferromagnets with dilute magnetic moments coupled by
delocalized charge carriers. Both local moments and itinerant holes are
provided by Mn, which makes the systems particularly favorable for realizing
this unusual ordered state. Advances in growth and post-growth treatment
techniques have played a central role in the field, often pushing the limits of
dilute Mn moment densities and the uniformity and purity of materials far
beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds,
material quality and magnetic properties are intimately connected. In the
review we focus on the theoretical understanding of the origins of
ferromagnetism and basic structural, magnetic, magneto-transport, and
magneto-optical characteristics of simple (III,Mn)V epilayers, with the main
emphasis on (Ga,Mn)As. The conclusions we arrive at are based on an extensive
literature covering results of complementary ab initio and effective
Hamiltonian computational techniques, and on comparisons between theory and
experiment.Comment: 58 pages, 49 figures Version accepted for publication in Rev. Mod.
Phys. Related webpage: http://unix12.fzu.cz/ms
Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
We analyze microscopically the valence and impurity band models of
ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with
conventional parameterization and the full potential LDA+U calculations give a
very similar picture of states near the Fermi energy which reside in an
exchange-split sp-d hybridized valence band with dominant orbital character of
the host semiconductor; this microscopic spectral character is consistent with
the physical premise of the k.p kinetic-exchange model. On the other hand, the
various models with a band structure comprising an impurity band detached from
the valence band assume mutually incompatible microscopic spectral character.
By adapting the tight-binding Anderson calculations individually to each of the
impurity band pictures in the single Mn impurity limit and then by exploring
the entire doping range we find that a detached impurity band does not persist
in any of these models in ferromagnetic (Ga,Mn)As.Comment: 29 pages, 25 figure
Evaluation of pyrolysis processes and biochar quality in the operation of flame curtain pyrolysis kiln for sustainable biochar production
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Disorder effects in diluted ferromagnetic semiconductors
Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed
within a two step approach. First, within a single site CPA formalism, we
calculate the element resolved averaged Green's function of the itinerant
carrier. Then using a generalized RKKY formula we evaluate the Mn-Mn long-range
exchange integrals and the Curie temperature as a function of the exchange
parameter, magnetic impurity concentration and carrier density. The effect of
the disorder (impurity scattering) appears to play a crucial role. The standard
RKKY calculation (no scattering processes), strongly underestimate the Curie
temperature and is inappropriate to describe magnetism in diluted magnetic
semi-conductors. It is also shown that an antiferromagnetic exchange favors
higher Curie temperature.Comment: tex file + 4 .eps figures are included. submited to PR
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in
spintronics research because of their potential to combine ferromagnetism and
semiconducting properties in one physical system. Ferromagnetism requires
~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at
these high dopings significantly suppress the Curie temperature. We present
experiments in which by etching the (Ga,Mn)As surface oxide we achieve a
dramatic reduction of annealing times necessary to optimize the ferromagnetic
film after growth, and report Curie temperature of 180 K at approximately 8% of
Mn_Ga. Our study elucidates the mechanism controlling the removal of the most
detrimental, interstitial Mn defect. The limits and utility of electrical
gating of the highly-doped (Ga,Mn)As semiconductor are not yet established; so
far electric-field effects have been demonstrated on magnetization with tens of
Volts applied on a top-gate, field effect transistor structure. In the second
part of the paper we present a back-gate, n-GaAs/AlAs/GaMnAs transistor
operating at a few Volts. Inspired by the etching study of (Ga,Mn)As films we
apply the oxide-etching/re-oxidation procedure to reduce the thickness (arial
density of carriers) of the (Ga,Mn)As and observe a large enhancement of the
gating efficiency. We report gatable spintronic characteristics on a series of
anisotropic magnetoresistance measurements.Comment: 13 pages, 4 figure
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