Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective

We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) - the simplest extension of dynamical mean field theory (DMFT) capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.Comment: 4+ pages, 4 figures, v2: minor changes, accepted for publication in Phys. Rev. Let

Transport Processes in Metal-Insulator Granular Layers

Tunnel transport processes are considered in a square lattice of metallic nanogranules embedded into insulating host to model tunnel conduction in real metal/insulator granular layers. Based on a simple model with three possible charging states ($\pm$, or 0) of a granule and three kinetic processes (creation or recombination of a $\pm$ pair, and charge transfer) between neighbor granules, the mean-field kinetic theory is developed. It describes the interplay between charging energy and temperature and between the applied electric field and the Coulomb fields by the non-compensated charge density. The resulting charge and current distributions are found to be essentially different in the free area (FA), between the metallic contacts, or in the contact areas (CA), beneath those contacts. Thus, the steady state dc transport is only compatible with zero charge density and ohmic resistivity in FA, but charge accumulation and non-ohmic behavior are \emph{necessary} for conduction over CA. The approximate analytic solutions are obtained for characteristic regimes (low or high charge density) of such conduction. The comparison is done with the measurement data on tunnel transport in related experimental systems.Comment: 10 pages, 11 figures, 1 reference corrected, acknowlegments adde

The estimation of coherence length for electron-doped superconductor Nd2−x_{2-x}Cex_xCuO4+δ_{4+\delta}

Results of low-temperature upper critical field measurements for Nd$_{2-x}$Ce$_x$CuO$_{4+\delta}$ single crystals with various $x$ and nonstoichiometric disorder ($\delta$) are presented. The coherence length of pair correlation $\xi$ and the product $k_F$$\xi$, where $k_F$ is the Fermi wave vector, are estimated. It is shown that for investigated single crystals parameter $k_F$$\xi$ $\cong$ 100 and thus phenomenologically NdCeCuO - system is in a range of Cooper-pair-based (BCS) superconductivity.Comment: 8 pages, 3 figures, 2 table

Rotational predissociation of extremely weakly bound atom-molecule complexes produced by Feshbach resonance association

We study the rotational predissociation of atom - molecule complexes with very small binding energy. Such complexes can be produced by Feshbach resonance association of ultracold molecules with ultracold atoms. Numerical calculations of the predissociation lifetimes based on the computation of the energy dependence of the scattering matrix elements become inaccurate when the binding energy is smaller than the energy width of the predissociating state. We derive expressions that represent accurately the predissociation lifetimes in terms of the real and imaginary parts of the scattering length and effective range for molecules in an excited rotational state. Our results show that the predissociation lifetimes are the longest when the binding energy is positive, i.e. when the predissociating state is just above the excited state threshold.Comment: 17 pages, 5 figure

Electronic structure and light-induced conductivity in a transparent refractory oxide

Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by specific doping.Comment: 4 pages including 4 figure

Pressure-Induced Insulating State in Ba1-xRExIrO3 (RE = Gd, Eu) Single Crystals

BaIrO3 is a novel insulator with coexistent weak ferromagnetism, charge and spin density wave. Dilute RE doping for Ba induces a metallic state, whereas application of modest pressure readily restores an insulating state characterized by a three-order-of-magnitude increase of resistivity. Since pressure generally increases orbital overlap and broadens energy bands, a pressure-induced insulating state is not commonplace. The profoundly dissimilar responses of the ground state to light doping and low hydrostatic pressures signal an unusual, delicate interplay between structural and electronic degrees of freedom in BaIrO3

Unusual Low-Temperature Phase in VO2_2 Nanoparticles

We present a systematic investigation of the crystal and electronic structure and the magnetic properties above and below the metal-insulator transition of ball-milled VO$_2$ nanoparticles and VO$_2$ microparticles. For this research, we performed a Rietveld analysis of synchrotron radiation x-ray diffraction data, O $K$ x-ray absorption spectroscopy, V $L_3$ resonant inelastic x-ray scattering, and magnetic susceptibility measurements. This study reveals an unusual low-temperature phase that involves the formation of an elongated and less-tilted V-V pair, a narrowed energy gap, and an induced paramagnetic contribution from the nanoparticles. We show that the change in the crystal structure is consistent with the change in the electronic states around the Fermi level, which leads us to suggest that the Peierls mechanism contributes to the energy splitting of the $a_{1g}$ state. Furthermore, we find that the high-temperature rutile structure of the nanoparticles is almost identical to that of the microparticles.Comment: 7 pages, 8 figures, 2 table

Spin-orbit tuned metal-insulator transitions in single-crystal Sr2Ir1-xRhxO4 (0\leqx\leq1)

Sr2IrO4 is a magnetic insulator driven by spin-orbit interaction (SOI) whereas the isoelectronic and isostructural Sr2RhO4 is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of the strong SOI in the iridate. Our investigation of structural, transport, magnetic and thermal properties reveals that substituting 4d Rh4+ (4d5) ions for 5d Ir4+(5d5) ions in Sr2IrO4 directly reduces the SOI and rebalances the competing energies so profoundly that it generates a rich phase diagram for Sr2Ir1-xRhxO4 featuring two major effects: (1) Light Rh doping (0\leqx\leq0.16) prompts a simultaneous and precipitous drop in both the electrical resistivity and the magnetic ordering temperature TC, which is suppressed to zero at x = 0.16 from 240 K at x=0. (2) However, with heavier Rh doping (0.24< x<0.85 (\pm0.05)) disorder scattering leads to localized states and a return to an insulating state with spin frustration and exotic magnetic behavior that only disappears near x=1. The intricacy of Sr2Ir1-xRhxO4 is further highlighted by comparison with Sr2Ir1-xRuxO4 where Ru4+(4d4) drives a direct crossover from the insulating to metallic states.Comment: 5 figure