Structural Transition of Li2RuO3 Induced by Molecular-Orbit Formation

A pseudo honeycomb system Li2RuO3 exhibits a second-order-like transition at temperature T=Tc=540 K to a low-T nonmagnetic phase with a significant lattice distortion forming Ru-Ru pairs. For this system, we have calculated the band structure, using the generalized gradient approximation (GGA) in both the high- and low- T phases, and found that the results of the calculation can naturally explain the insulating behavior observed in the low-T phase. The detailed characters of the Ru 4d t2g bands obtained by the tight-binding fit to the calculated dispersion curves show clear evidence that the structural transition is driven by the formation of the Ru-Ru molecular-orbits, as proposed in our previous experimental studies.Comment: 5 pages, 5 figures, 4 tables, submitted to J. Phys. Soc. Jp

Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers

We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current–voltage (I–V) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the I–V curves are attributed to hole tunneling through the first heavy- and light-hole energy levels

Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films

We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were used to make cyclotron resonance observable in these low-mobility samples. The clear observation of hole cyclotron resonance is direct evidence of the existence of a large number of itinerant, effective-mass-type holes rather than localized d-like holes. It further suggests that the p-d exchange mechanism is more favorable than the double exchange mechanism in this narrow gap InAs-based dilute magnetic semiconductor. In addition to the fundamental heavy-hole and light-hole cyclotron resonance absorption appearing near the high-magnetic-field quantum limit, we observed many inter-Landau-level absorption bands whose transition probabilities are stronglydependent on the sense of circular polarization of the incident light.Comment: 8 pages, 10 Postscript figure

Electronic structure and effects of dynamical electron correlation in ferromagnetic bcc-Fe, fcc-Ni and antiferromagnetic NiO

LDA+DMFT method in the framework of the iterative perturbation theory (IPT) with full LDA Hamiltonian without mapping onto the effective Wannier orbitals. We then apply this LDA+DMFT method to ferromagnetic bcc-Fe and fcc-Ni as a test of transition metal, and to antiferromagnetic NiO as an example of transition metal oxide. In Fe and Ni, the width of occupied 3d bands is narrower than those in LDA and Ni 6eV satellite appears. In NiO, the resultant electronic structure is of charge-transfer insulator type and the band gap is 4.3eV. These results are in good agreement with the experimental XPS. The configuration mixing and dynamical correlation effects play a crucial role in these results

Early evolution of CV reduced-type parent body.

第2回極域科学シンポジウム/第34回南極隕石シンポジウム 11月17日（木） 国立国語研究所 2階講