7,284 research outputs found
Structural Transition of Li2RuO3 Induced by Molecular-Orbit Formation
A pseudo honeycomb system Li2RuO3 exhibits a second-order-like transition at
temperature T=Tc=540 K to a low-T nonmagnetic phase with a significant lattice
distortion forming Ru-Ru pairs. For this system, we have calculated the band
structure, using the generalized gradient approximation (GGA) in both the high-
and low- T phases, and found that the results of the calculation can naturally
explain the insulating behavior observed in the low-T phase. The detailed
characters of the Ru 4d t2g bands obtained by the tight-binding fit to the
calculated dispersion curves show clear evidence that the structural transition
is driven by the formation of the Ru-Ru molecular-orbits, as proposed in our
previous experimental studies.Comment: 5 pages, 5 figures, 4 tables, submitted to J. Phys. Soc. Jp
Si/Ge hole-tunneling double-barrier resonant tunneling diodes formed on sputtered flat Ge layers
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current–voltage (I–V) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the I–V curves are attributed to hole tunneling through the first heavy- and light-hole energy levels
Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films
We have carried out an ultrahigh-field cyclotron resonance study of p-type
In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs
by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T
were used to make cyclotron resonance observable in these low-mobility samples.
The clear observation of hole cyclotron resonance is direct evidence of the
existence of a large number of itinerant, effective-mass-type holes rather than
localized d-like holes. It further suggests that the p-d exchange mechanism is
more favorable than the double exchange mechanism in this narrow gap InAs-based
dilute magnetic semiconductor. In addition to the fundamental heavy-hole and
light-hole cyclotron resonance absorption appearing near the
high-magnetic-field quantum limit, we observed many inter-Landau-level
absorption bands whose transition probabilities are stronglydependent on the
sense of circular polarization of the incident light.Comment: 8 pages, 10 Postscript figure
Electronic structure and effects of dynamical electron correlation in ferromagnetic bcc-Fe, fcc-Ni and antiferromagnetic NiO
LDA+DMFT method in the framework of the iterative perturbation theory (IPT)
with full LDA Hamiltonian without mapping onto the effective Wannier orbitals.
We then apply this LDA+DMFT method to ferromagnetic bcc-Fe and fcc-Ni as a test
of transition metal, and to antiferromagnetic NiO as an example of transition
metal oxide. In Fe and Ni, the width of occupied 3d bands is narrower than
those in LDA and Ni 6eV satellite appears. In NiO, the resultant electronic
structure is of charge-transfer insulator type and the band gap is 4.3eV. These
results are in good agreement with the experimental XPS. The configuration
mixing and dynamical correlation effects play a crucial role in these results
Early evolution of CV reduced-type parent body.
第2回極域科学シンポジウム/第34回南極隕石シンポジウム 11月17日(木) 国立国語研究所 2階講
Degradation mechanism of dielectric properties of HfO due to interaction of oxygen composition and strain
Study on Power Supply System for Superconducting Magnets using Low Frequency Power Transmission
WWP1 knockout in mice exacerbates obesity-related phenotypes in white adipose tissue but improves whole-body glucose metabolism
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