Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the P

Raman-scattering study of the InGaN alloy over the whole composition range

We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions

Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered

Site multiplicity of rare earth ions in III-nitrides

This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect

Structural and optical properties of MOCVD AllnN epilayers

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Electric field inside a "Rossky cavity" in uniformly polarized water

Electric field produced inside a solute by a uniformly polarized liquid is strongly affected by dipolar polarization of the liquid at the interface. We show, by numerical simulations, that the electric "cavity" field inside a hydrated non-polar solute does not follow the predictions of standard Maxwell's electrostatics of dielectrics. Instead, the field inside the solute tends, with increasing solute size, to the limit predicted by the Lorentz virtual cavity. The standard paradigm fails because of its reliance on the surface charge density at the dielectric interface determined by the boundary conditions of the Maxwell dielectric. The interface of a polar liquid instead carries a preferential in-plane orientation of the surface dipoles thus producing virtually no surface charge. The resulting boundary conditions for electrostatic problems differ from the traditional recipes, affecting the microscopic and macroscopic fields based on them. We show that relatively small differences in cavity fields propagate into significant differences in the dielectric constant of an ideal mixture. The slope of the dielectric increment of the mixture versus the solute concentration depends strongly on which polarization scenario at the interface is realized. A much steeper slope found in the case of Lorentz polarization also implies a higher free energy penalty for polarizing such mixtures.Comment: 9 pages, 8 figure

Correlating Composition and Luminescence Variations in AlInGaN epilayers

Epilayers of the quaternary alloy AlxInyGa1 x yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples

Parton Distributions in the Valon Model

The parton distribution functions determined by CTEQ at low $Q^2$ are used as inputs to test the validity of the valon model. The valon distributions in a nucleon are first found to be nearly $Q$ independent. The parton distribution in a valon are shown to be consistent with being universal, independent of the valon type. The momentum fractions of the partons in the valon add up separately to one. These properties affirm the validity of the valon model. The various distributions are parameterized for convenient application of the model.Comment: 9 pages + 9 figures in ep

Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN

GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ⁰C in vacuum, in flowing nitrogen gas or a mixture of NH₃ and N₂. Rutherford backscattering spectrometry in the channeling mode was used to study the evolution of damage introduction and recovery in the Ga sublattice and to monitor the rare earth profiles after annealing. The surface morphology of the samples was analyzed by scanning electron microscopy and the optical properties by room temperature cathodoluminescence (CL). Samples annealed in vacuum and N₂ already show the first signs of surface dissociation at 1000 ⁰C. At higher temperature, Ga droplets form, at the surface. However, samples annealed in NH₃+N₂ exhibit a very good recovery of the lattice along with a smooth surface. These samples also show the strongest CL intensity for the rare earth related emissions in the green (for Er) and red (for Eu). After annealing at 1200 ⁰C in NH₃+N₂ the Eu implanted sample reveals the channeling qualities of an unimplanted sample and a strong increase of CL intensity is observed