X-ray dosimetry of copper-doped CdGa₂S₄ single crystals

Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄ single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics Ir ~ E tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5, which testifies to the mechanism of quadratic recombination of charge carriers generated by X-rays in CdGa₂S₄

Frequency-dependent dielectric coefficients of TlInS₂ amorphous films

The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂ amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂. Such a behavior is caused by optical transitions in TlInS₂ amorphous films