3,636 research outputs found
Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices
The speed of silicon-based transistors has reached an impasse in the recent
decade, primarily due to scaling techniques and the short-channel effect.
Conversely, graphene (a revolutionary new material possessing an atomic
thickness) has been shown to exhibit a promising value for electrical
conductivity. Graphene would thus appear to alleviate some of the drawbacks
associated with silicon-based transistors. It is for this reason why such a
material is considered one of the most prominent candidates to replace silicon
within nano-scale transistors. The major crux here, is that graphene is
intrinsically gapless, and yet, transistors require a band-gap pertaining to a
well-defined ON/OFF logical state. Therefore, exactly as to how one would
create this band-gap in graphene allotropes is an intensive area of growing
research. Existing methods include nano-ribbons, bilayer and multi-layer
structures, carbon nanotubes, as well as the usage of the graphene substrates.
Graphene transistors can generally be classified according to two working
principles. The first is that a single graphene layer, nanoribbon or carbon
nanotube can act as a transistor channel, with current being transported along
the horizontal axis. The second mechanism is regarded as tunneling, whether
this be band-to-band on a single graphene layer, or vertically between adjacent
graphene layers. The high-frequency graphene amplifier is another talking point
in recent research, since it does not require a clear ON/OFF state, as with
logical electronics. This paper reviews both the physical properties and
manufacturing methodologies of graphene, as well as graphene-based electronic
devices, transistors, and high-frequency amplifiers from past to present
studies. Finally, we provide possible perspectives with regards to future
developments.Comment: This is an updated version of our review article, due to be published
in Contemporary Physics (Sept 2013). Included are updated references, along
with a few minor corrections. (45 pages, 19 figures
Spin Star as Switch for Quantum Networks
Quantum state transfer is an important task in quantum information
processing. It is known that one can engineer the couplings of a
one-dimensional spin chain to achieve the goal of perfect state transfer. To
leverage the value of these spin chains, a spin star is potentially useful for
connecting different parts of a quantum network. In this work, we extend the
spin-chain engineering problem to the problems with a topology of a star
network. We show that a permanently coupled spin star can function as a network
switch for transferring quantum states selectively from one node to another by
varying the local potentials only. Together with one-dimensional chains, this
result allows applications of quantum state transfer be applied to more general
quantum networks.Comment: 10 pages, 2 figur
Kinetics of ADP-induced Human Platelet Shape Change: Apparent Positive Cooperativity
The kinetics of ADP-induced human platelet shape change have been examined. Initial velocities of platelet shape change were estimated by two methods: 1) the slope of the initial decrease in light transmission through stirred, citrated platelet-rich plasma, and 2) direct examination of platelet morphologies by phase-contrast microscopy. In both cases, a value of the Hill coefficient, n, significantly greater than 1 is obtained (2.0 +/- 0.2 and 1.8 +/- 0.2, respectively). The observed elevated value of n is not due to a substantial fraction of the ADP being platelet bound, the presence of factors in the plasma, platelet heterogeneity, of the influence of the rate of platelet shape change reversion. Our observations suggest that ADP-induced platelet shape change may be a positive cooperative or threshold type response
Multi-Qubit Gates in Arrays Coupled by 'Always On' Interactions
Recently there has been interest in the idea of quantum computing without
control of the physical interactions between component qubits. This is highly
appealing since the 'switching' of such interactions is a principal difficulty
in creating real devices. It has been established that one can employ 'always
on' interactions in a one-dimensional Heisenberg chain, provided that one can
tune the Zeeman energies of the individual (pseudo-)spins. It is important to
generalize this scheme to higher dimensional networks, since a real device
would probably be of that kind. Such generalisations have been proposed, but
only at the severe cost that the efficiency of qubit storage must *fall*. Here
we propose the use of multi-qubit gates within such higher-dimensional arrays,
finding a novel three-qubit gate that can in fact increase the efficiency
beyond the linear model. Thus we are able to propose higher dimensional
networks that can constitute a better embodiment of the 'always on' concept - a
substantial step toward bringing this novel concept to full fruition.Comment: 20 pages in preprint format, inc. 3 figures. This version has fixed
typos and printer-friendly figures, and is to appear in NJ
Time-dependent density-functional theory for open systems
By introducing the self-energy density functionals for the dissipative
interactions between the reduced system and its environment, we develop a
time-dependent density-functional theory formalism based on an equation of
motion for the Kohn-Sham reduced single-electron density matrix of the reduced
system. Two approximate schemes are proposed for the self-energy density
functionals, the complete second order approximation and the wide-band limit
approximation. A numerical method based on the wide-band limit approximation is
subsequently developed and implemented to simulate the steady and transient
current through various realistic molecular devices. Simulation results are
presented and discussed.Comment: 16 pages, 12 figure
Acute Neurological Toxicity (NT) and Long-Term Outcomes in High-grade Glioma RTOG Trials
Background: Treatment of high-grade glioma consists of fractionated radiation therapy (RT) ± chemotherapy. The incidence/significance of neurological toxicity (NT) in this disease is not known. We evaluated the relationship between acute and chronic NT, and ultimate outcome, as well as risk factors for NT from the RTOG database.
American Society of Clinical Oncology (ASCO) 46th Annual Meeting June 4-8, Chicago, IL
Bulk Fermi surface and momentum density in heavily doped LaSrCuO using high resolution Compton scattering and positron annihilation spectroscopies
We have observed the bulk Fermi surface (FS) in an overdoped (=0.3) single
crystal of LaSrCuO by using Compton scattering. A
two-dimensional (2D) momentum density reconstruction from measured Compton
profiles yields a clear FS signature in the third Brillouin zone along [100].
The quantitative agreement between density functional theory (DFT) calculations
and momentum density experiment suggests that Fermi-liquid physics is restored
in the overdoped regime. In particular the predicted FS topology is found to be
in good accord with the corresponding experimental data. We find similar
quantitative agreement between the measured 2D angular correlation of positron
annihilation radiation (2D-ACAR) spectra and the DFT based computations.
However, 2D-ACAR does not give such a clear signature of the FS in the extended
momentum space in either the theory or the experiment.Comment: 9 pages, 8 figure
Managing organizational DSS development in small manufacturing enterprise
A number of Hong Kong manufacturing companies have moved their production to the People's Republic of China while retaining their supporting functions (such as marketing, distribution, etc.) in Hong Kong. As a consequence, their mode of operation has become more complex and demands better production planning and control (PPC). One solution is to use an information system in which all factory resources are integrated within a single framework for PPC. The main instrument of this strategy is an Organizational DSS (ODSS). This paper presents a case study of development and adoption of an ODSS in a small manufacturing enterprise. Analysis of the findings highlights the cultural as well as organizational underpinnings and the need for effective intervention before and throughout the computerization. The implementation strategies are described, with emphasis on prerequisite infrastructural developments, showing how they provide opportunities and constraints
Temperley-Lieb Words as Valence-Bond Ground States
Based on the Temperley--Lieb algebra we define a class of one-dimensional
Hamiltonians with nearest and next-nearest neighbour interactions. Using the
regular representation we give ground states of this model as words of the
algebra. Two point correlation functions can be computed employing the
Temperley--Lieb relations. Choosing a spin-1/2 representation of the algebra we
obtain a generalization of the (q-deformed) Majumdar--Ghosh model. The ground
states become valence-bond states.Comment: 9 Pages, LaTeX (with included style files
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