A theoretical model for estimation of work function reduction for MXenes with hydroxyl termination

This article presents a simple model that explains significant reduction of work function in MXenes Тіn+1Сn with hydroxyl termination and demonstrates matching results to ones in the existing literature, obtained via complex computing based on the first principles. This model can be applied for results evaluation of the hydroxyfunctionalization of various MXene types, due to prospects of the creation of novice emission electronics devices

Thermal-radiation-induced nonequilibrium carriers in an intrinsic graphene

We examine an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature T_r, other than T. The distribution of nonequilibrium electron-hole pairs was obtained for the cases of low and high concentration of carriers. For the case when the interparticle scattering is unessential, the distribution function is determined by the interplay of intraband relaxation of energy due to acoustic phonons and interband radiative transitions caused by the thermal radiation. When the Coulomb scattering dominates, then the quasi-equilibrium distribution with effective temperature and non-equilibrium concentration, determined through balance equations, is realized. Due to the effect of thermal radiation with temperature $T_r\neq T$ concentration and conductivity of carriers in graphene modify essentially. It is demonstrated, that at $T_r>T$ the negative interband absorption, caused by the inversion of carriers distribution, can occur, i.e. graphene can be unstable under thermal irradiation.Comment: 5 pages, 4 figure

Ferroelectric domain triggers the charge modulation in semiconductors (invited)

We consider a typical heterostructure "domain patterned ferroelectric film - ultra-thin dielectric layer - semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. © 2014 AIP Publishing LLC