23 research outputs found

    Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

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    Erbium-doped barium titanate (BaTiO3:Er) xerogel film with a thickness of about 500 nm was formed on the porous strontium titanate (SrTiO3) xerogel film on Si substrate after annealing at 800 °C or 900 °C. The elaborated structures show room temperature upconversion luminescence under 980 nm excitation with the photoluminescence (PL) bands at 523, 546, 658, 800 and 830 nm corresponding to 2H11/2→4I15/2, 4S3/2→4I15/2, 4F9/2→4I15/2 and 4I9/2→4I15/2 transitions of trivalent erbium. Raman and X-ray diffraction (XRD) analysis of BaTiO3:Er\porous SrTiO3\Si structure showed the presence of perovskite phases. Its excellent up-conversion optical performance will greatly broaden its applications in perovskite solar cells and high-end anti-counterfeiting technologies

    РАСПРЕДЕЛЕНИЕ КИСЛОРОДА И ЭРБИЯ В КРЕМНИИ ПРИ ДИФФУЗИОННОМ ЛЕГИРОВАНИИ

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    The composition of diffusion silicon layers doped by rare earth erbium was investigated. The diffusion source was an erbium oxide layer on the surface of the test silicon wafer. The erbium and oxygen distribution profile in silicon was measured by SIMS. The concentration of electrically active erbium impurity in the diffusion layers on silicon was determined by measuring the surface resistance and carrier mobility during consecutive etching of layers. The erbium diffusion coefficient at 1240 °C was estimated to be 4.8 · 10−13 cm2 · s−1. A model of erbium and oxygen simultaneous diffusion was suggested. The model takes into account the association of erbium and oxygen into complexes. The results of numerical simulation and experimental data are in a good agreement for the near−surface region of the diffusion layer.Проведены исследования состава диффузионных слоев кремния, легированного редкоземельным элементом эрбием. Диффузия проведена из оксидной пленки эрбия, созданной на поверхности пластины кремния. Методом вторичной ионной массспектрометрии определены концентрационные профили эрбия и кислорода в кремнии. Профиль электрически активного эрбия определен методом измерения поверхностного сопротивления и подвижности носителей заряда при последовательном стравливании слоев. Рассчитан коэффициент диффузии эрбия при температуре 1240 оС, его значение составило 4,8 • 10−13 см2 • с−1. Предложена модель одновременной диффузии эрбия и кислорода в кремний, учитывающая процесс связывания эрбия и кислорода в комплексы. Путем сравнения результатов численного моделирования с экспериментальными данными показано их хорошее совпадение для приповерхностной области диффузионного слоя.      

    Upconversion Luminescence of Er3+ Ions from Barium Titanate Xerogel Powder and Target Fabricated by Explosive Compaction Method

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    Photo- and cathodoluminescence in the visible range from erbium-doped barium titanate xerogels obtained in the form of a powder and a target pressed from it by explosive compaction are investigated. The powder and target exhibit upconversion luminescence of erbium ions excited at wavelengths in the regions 950–1000 and 1450–1550 nm that is characterized by strong bands at 650 and 520–560 nm and a weak band at ~820 nm that correspond to the 4F9/2 → 4I15/2, 2H11/2 → 4I15/2, 4S3/2 → 4I15/2, and 4I9/2 → 4I15/2 transitions of Er3+. The target also demonstrates cathodoluminescence at room temperature and liquid nitrogen temperature with the strongest bands at 650, 520, and 538 nm

    Optical Properties and Upconversion Luminescence of BaTiO3 Xerogel Structures Doped with Erbium and Ytterbium

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    Erbium upconversion (UC) photoluminescence (PL) from sol-gel derived barium titanate (BaTiO3:Er) xerogel structures fabricated on silicon, glass or fused silica substrates has been studied. The fabricated structures under continuous-wave excitation at 980 nm and nanosecond laser excitation at 980 and 1540 nm demonstrate room temperature PL with the bands at 410, 523, 546, 658, 800 and 830 nm, which correspond to the 2H9/2 → 4I15/2, 2H11/2 → 4I15/2, 4S3/2 → 4I15/2, 4F9/2→ 4I15/2 and 4I9/2→ 4I15/2 transitions in Er3+ ions. The intensity of erbium UС PL increases when an additional macroporous layer of strontium titanate is used beneath the BaTiO3 xerogel layer. It is enhanced for BaTiO3 xerogel films codoped with erbium and ytterbium (BaTiO3:Er,Yb). The redistribution of the intensity of the PL bands is observed for the latter and it depends on the excitation conditions. Finally, a Bragg reflector and a microcavity structure comprising of alternating (BaTiO3:Er,Yb) and SiO2 xerogel layers were fabricated with the cavity mode near the red PL band of Er3+ ions. Enhancement of UC PL from the microcavity was observed for the sample annealed from 450°C to 600°C. The fabricated cavity structures annealed at 450°C allow us to tune the cavity mode with 10 nm shift within the temperature range from +20°C to +130°C. Photonic application of BaTiO3 xerogel structures doped with lanthanides is discussed

    Luminescence from europium and erbium doped yttrium aluminium garnets fabricated in porous anodic alumina membranes

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    We report on sol-gel synthesis of Eu- and Er-doped garnets in porous anodic alumina, revealing the strong luminescence in visible and near 1R ranges associated with the 4I13/2 →4[ 15/2 and 5D0 →7Fj (j=l, 2,3, 4) transitions of trivalent Er and Eu ions, respectively.</p

    The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films

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    In this contribution, we present a structural and photoluminescence (PL) analysis of Er-doped nanocrystalline silicon thin films produced by rf magnetron sputtering method. We show the strong influence of the presence of nanocrystalline fraction in films on their luminescence efficiency at 1.54 μm studied on a series of specially prepared samples with different crystallinity, i.e., percentage and sizes of Si nanocrystals. A strong increase, by about two orders of magnitude, of Er-related PL intensity in these samples with lowering of the Si nanocrystal sizes from 7.9 to about 1.5 nm is observed. The results are discussed in terms of the sensitization effect of Si nanocrystals on Er ion
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