Peltier effect in normal metal-insulator-heavy fermion metal junctions

A theoretical study has been undertaken of the Peltier effect in normal metal - insulator - heavy fermion metal junctions. The results indicate that, at temperatures below the Kondo temperature, such junctions can be used as electronic microrefrigerators to cool the normal metal electrode and are several times more efficient in cooling than the normal metal - heavy fermion metal junctions.Comment: 3 pages in REVTeX, 2 figures, to be published in Appl. Phys. Lett., April 7, 200

A short survey on nonlinear models of the classic Costas loop: rigorous derivation and limitations of the classic analysis

Rigorous nonlinear analysis of the physical model of Costas loop --- a classic phase-locked loop (PLL) based circuit for carrier recovery, is a challenging task. Thus for its analysis, simplified mathematical models and numerical simulation are widely used. In this work a short survey on nonlinear models of the BPSK Costas loop, used for pre-design and post-design analysis, is presented. Their rigorous derivation and limitations of classic analysis are discussed. It is shown that the use of simplified mathematical models, and the application of non rigorous methods of analysis (e.g., simulation and linearization) may lead to wrong conclusions concerning the performance of the Costas loop physical model.Comment: Accepted to American Control Conference (ACC) 2015 (Chicago, USA

A photoelectron spectroscopy study of the electronic structure evolution in CuInSe2-related compounds at changing copper content

Evolution of the valence-band structure at gradually increasing copper content has been analysed by x-ray photoelectron spectroscopy (XPS) in In2Se3, CuIn5Se8, CuIn3Se5, and CuInSe2 single crystals. A comparison of these spectra with calculated total and angular-momentum resolved density-of-states (DOS) revealed the main trends of this evolution. The formation of the theoretically predicted gap between the bonding and non-bonding states has been observed in both experimental XPS spectra and theoretical DOS

Optically Controlled Excitonic Transistor

Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers