25 research outputs found

    Magnetoresistance of a 2-dimensional electron gas in a random magnetic field

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    We report magnetoresistance measurements on a two-dimensional electron gas (2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation.Comment: REVTEX 3.0, 11 pages, 3 Postscript figures appended. The manuscript can also be obtained from our World Wide Web server: http://roemer.fys.ku.dk/randmag.ht

    S(k) for Haldane Gap Antiferromagnets: Large-scale Numerical Results vs. Field Theory and Experiment

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    The structure function, S(k), for the s=1, Haldane gap antiferromagnetic chain, is measured accurately using the recent density matrix renormalization group method, with chain-length 100. Excellent agreement with the nonlinear σ\sigma model prediction is obtained, both at kπk\approx \pi where a single magnon process dominates and at k0k\approx 0 where a two magnon process dominates. We repeat our calculation with crystal field anisotropy chosen to model NENP, obtaining good agreement with both field theory predictions and recent experiments. Correlation lengths, gaps and velocities are determined for both polarizations.Comment: 11 pages, 3 postscript figures included, REVTEX 3.0, UBCTP-93-02

    Impurities in s=1s=1 Heisenberg Antiferromagnets

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    The s=1s=1 Heisenberg Antiferromagnet is studied in the presence of two kinds of local impurities. First, a perturbed antiferromagnetic bond with JJJ'\ne J at the center of an even-length open chain is considered. Using the density matrix renormalization group method we find that, for sufficiently strong or weak JJ', a bound state is localized at the impurity site, giving rise to an energy level in the Haldane gap. The energy of the bound state is in agreement with perturbative results, based on s=1/2s=1/2 chain-end excitations, both in the weak and strong coupling limit. In a region around the uniform limit, J=JJ'=J, no states are found with energy below the Haldane gap. Secondly, a s=1/2s=1/2 impurity at the center of an otherwise even-length open chain is considered. The coupling to the s=1/2s=1/2 impurity is varied. Bound states in the Haldane gap are found {\it only} for sufficiently weak (antiferromagnetic) coupling. For a s=1/2s=1/2 impurity coupled with a strong (antiferromagnetic) bond, {\it no} states are found in the Haldane. Our results are in good qualitative agreement with recent experiments on doped NENP and Y2_2BaNiO5_5.Comment: 29 pages, RevTeX 3.0, 12 uuencoded postscript figures include

    Equal Time Correlations in Haldane Gap Antiferromagnets

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    The S=1S=1 antiferromagnetic Heisenberg chain both with and without single ion anisotropy is studied. Using the recently proposed density matrix renormalization group technique we calculate the energy gaps as well as several different correlation functions. The two gaps, Δ,Δ\Delta_{||}, \Delta_\perp, along with associated correlation lengths and velocities are determined. The numerical results are shown to be in good agreement with theoretical predictions derived from the nonlinear sigma model and a free boson model. We also study the S=1/2S=1/2 excitations that occur at the ends of open chains; in particular we study the behavior associated with open boundary conditions, using a model of S=1/2S=1/2 spins coupled to the free bosons.Comment: 32 pages, uufiles encoded REVTEX 3.0, 19 postscript figures included, UBCTP-93-02

    The superconductor-insulator transition in 2D dirty boson systems

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    Universal properties of the zero temperature superconductor-insulator transition in two-dimensional amorphous films are studied by extensive Monte Carlo simulations of bosons in a disordered medium. We report results for both short-range and long-range Coulomb interactions for several different points in parameter space. In all cases we observe a transition from a superconducting phase to an insulating Bose glass phase. {}From finite-size scaling of our Monte Carlo data we determine the universal conductivity σ\sigma^* and the critical exponents at the transition. The result σ=(0.55±0.06)(2e)2/h\sigma^* = (0.55 \pm 0.06) (2e)^2/h for bosons with long-range Coulomb interaction is roughly consistent with experiments reported so far. We also find σ=(0.14±0.03)(2e)2/h\sigma^* = (0.14 \pm 0.03) (2e)^2/h for bosons with short-range interactions.Comment: Revtex 3.0, 54 pages, 17 figures included, UBCTP-93-01

    Integer Quantum Hall Effect in Double-Layer Systems

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    We consider the localization of independent electron orbitals in double-layer two-dimensional electron systems in the strong magnetic field limit. Our study is based on numerical Thouless number calculations for realistic microscopic models and on transfer matrix calculations for phenomenological network models. The microscopic calculations indicate a crossover regime for weak interlayer tunneling in which the correlation length exponent appears to increase. Comparison of network model calculations with microscopic calculations casts doubt on their generic applicability.Comment: 14 pages, 12 figures included, RevTeX 3.0 and epsf. Additional reference

    Rising rural body-mass index is the main driver of the global obesity epidemic in adults

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    Body-mass index (BMI) has increased steadily in most countries in parallel with a rise in the proportion of the population who live in cities 1,2 . This has led to a widely reported view that urbanization is one of the most important drivers of the global rise in obesity 3�6 . Here we use 2,009 population-based studies, with measurements of height and weight in more than 112 million adults, to report national, regional and global trends in mean BMI segregated by place of residence (a rural or urban area) from 1985 to 2017. We show that, contrary to the dominant paradigm, more than 55 of the global rise in mean BMI from 1985 to 2017�and more than 80 in some low- and middle-income regions�was due to increases in BMI in rural areas. This large contribution stems from the fact that, with the exception of women in sub-Saharan Africa, BMI is increasing at the same rate or faster in rural areas than in cities in low- and middle-income regions. These trends have in turn resulted in a closing�and in some countries reversal�of the gap in BMI between urban and rural areas in low- and middle-income countries, especially for women. In high-income and industrialized countries, we noted a persistently higher rural BMI, especially for women. There is an urgent need for an integrated approach to rural nutrition that enhances financial and physical access to healthy foods, to avoid replacing the rural undernutrition disadvantage in poor countries with a more general malnutrition disadvantage that entails excessive consumption of low-quality calories. © 2019, The Author(s)

    Energy Deposition of keV Electrons in Light Elements

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    The Monte Carlo simulation method has been used to investigate the spatial distribution of deposited energy for 1–10 keV electrons incident on solid hydrogen, nitrogen, neon, silicon, aluminum, and argon. In the simulation, elastic scattering cross sections are calculated exactly using the single‐atom crystalline potentials. Inelastic energy loss processes for hydrogen are based on the ionization cross section from Green and Sawada [J. Atmos. Terr. Phys. 3 4, 1719 (1972)] and the gas‐phase stopping power from Parks e t a l. [Nucl. Fus. 1 7, 539 (1977)]. For the heavier materials a modification of Gryziński’s [Phys. Rev. A 1 3 8, 305 (1965); 1 3 8, 322 (1965); 1 3 8, 336 (1965)] semiempirical expression for each core and valence electron excitation is used. The energy‐deposition distribution of keV electrons and the ionization distribution of weakly bound electrons are practically equal, whereas the penetration depth distribution extends deeper into the material than the energy‐deposition distribution. The energy‐deposition distributions of keV electrons for light materials, except for hydrogen, can be represented quite well by a universal distribution. In addition, accurate Gaussian approximations for the different materials in the entire energy region from 1 to 10 keV have been evaluated. Parameters such as the mean penetration depth and the mean energy‐deposition depth are included as well.Peer reviewe
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