Alignment Dynamics of Single-Walled Carbon Nanotubes in Pulsed Ultrahigh Magnetic Fields

We have measured the dynamic alignment properties of single-walled carbon nanotube (SWNT) suspensions in pulsed high magnetic fields through linear dichroism spectroscopy. Millisecond-duration pulsed high magnetic fields up to 56 T as well as microsecond-duration pulsed ultrahigh magnetic fields up to 166 T were used. Due to their anisotropic magnetic properties, SWNTs align in an applied magnetic field, and because of their anisotropic optical properties, aligned SWNTs show linear dichroism. The characteristics of their overall alignment depend on several factors, including the viscosity and temperature of the suspending solvent, the degree of anisotropy of nanotube magnetic susceptibilities, the nanotube length distribution, the degree of nanotube bundling, and the strength and duration of the applied magnetic field. In order to explain our data, we have developed a theoretical model based on the Smoluchowski equation for rigid rods that accurately reproduces the salient features of the experimental data.Comment: 20 pages, 6 figure

Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field are varied. An interesting beat pattern in the TMR and spin polarization is found for different NMS/DMS double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are splitted by the s-d exchange interaction.Comment: 4 pages, 6 figures, submitted to Phys. Rev.

Longitudinal spin transport in diluted magnetic semiconductor superlattices: the effect of the giant Zeeman splitting

Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic field region the giant Zeeman splitting plays a dominant role which leads to a large negative magnetoconductivity. In the strong magnetic field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the $s-d$ exchange interaction between the electron in the conduction band and the magnetic ions.Comment: 6 pages, 9 figures, submitted to Phys. Rev.

Crossover in the Van Vleck paramagnet TmPO 4

Abstract Magnetic anomalies caused by crossing of the lowest-lying energy levels (crossover) of Tm 3+ ion in the magnetic field along the tetragonal axis of a TmPO 4 single-crystal near 30 T are investigated experimentally and theoretically. Measurements of the differential magnetic susceptibility dM=dH by the compensated pick-up coil method with different rates of up-and down-sweep of the magnetic field from 2 K to about 19 K have allowed studying temperature variations of width and shape of the dM=dH peak and hysteresis phenomena associated with relaxation processes. The influence of the misorientation effect and hyperfine coupling on the character of anomalies are explored. Comparison of experimental and theoretical data suggests a cooling of a sample, accompanied by an increase of spin-lattice relaxation times, when approaching the crossover in pulsed regime.

RIGHT-FIELD SUBMILLIMETER MAGNETO-SPECTROSCOPY ON Hg(Fe)Se

Magnetooptical phenomena in the zero-gap semimagnetic semiconductor Hg(Fe)Se are studied by various techniques in pulsed magnetic fields up to 150 Τ. Microscopical parameters are estimated in combination with results obtained from transport and magnetization measurements

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure

The Temperature Dependence of the Three-Dimensional Analogue of the Quantum Hall Effect in Semimagnetic Hg1−x\text{}_{1-x}Fex\text{}_{x}Se

Due to the pinning of the Fermi energy to a localised donor state in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se the free carrier concentration oscillates in an applied external magnetic field. We measured the resulting modulations of the Hall resistance in fields up to 17.5 T and at temperatures between 4.2 K and 30 K

Magnetoplasma reflectivity studies on Cd3As2

Magnetoplasma reflectivity measurements were performed on Cd3As2 in order to obtain more experimental details about the structure of the plasma reflectivity edge. The experimental results can be explained by assuming the existence of a surface layer with a carrier concentration-gradient which is responsible for optical interference effects

Submilimeter Magnetospectroscopy on ZnFeSe

We report FIR laser spectroscopy study of Zn$\text{}_{1-x}$Fe$\text{}_{x}$Se (x < 0.06) Semimagnetic Semiconductor at the temperature range of 2-26 K and magnetic fields up to 18T