Noble-gas ion bombardment on clean silicon surfaces

Under UHV conditions clean c-Si(111) surfaces have been bombarded at room temperature by noble gases (He,Ne,Ar,Kr). Using spectroscopic ellipsometry, the implantation processes were continuously recorded. A low-dose behavior (amorphization) and a high-dose behavior (dilution) are observed. After termination of the bombardment, a self-anneal behavior appears and some experiments are discussed in order to explain the observed phenomena. After applying a monotonous temperature increase up to 1100 K, the noble gas desorbs and the surface layer returns to the original state, as can be seen from a closed trajectory in the (δψ,δΔ) plane. The low-dose behavior is analyzed in the scope of a simple ellipsometric first-order approximation, and the results obtained are compared with theory. The dilution arising during the high-dose behavior can be explained ellipsometrically by means of microscopic surface roughness, and some complementary measurements are reported to verify this explanation

Introduction

Optical thin film characterization represents the total of all theoretical and experimental activities, which pursue determination of various thin film construction parameters. The purpose of optical characterization is usually in the determination of film thickness, refractive index and extinction coefficient, porosity, surface roughness, film stoichiometry, film density and the like