358 research outputs found
Terahertz photoresponse of a quantum Hall edge-channel diode
The Teraherz (THz) photoresponse of a two-dimensional electron gas in the
quantum Hall regime is investigated. We use a sample structure which is
topologically equivalent to a Corbino geometry combined with a cross-gate
technique. This quasi-Corbino geometry allows us to directly investigate the
THz-induced transport between adjacent edge-states, thus avoiding bulk effects.
We find a pronounced photo voltage at zero applied bias, which rapidly
decreases when an external current bias is applied. The photo voltage and its
dependence on the bias current can be described using the model of an
illuminated photodiode, resulting from the reconstruction of the Landau bands
at the sample edge. Using the sample as a detector in a Fourier transform
spectrometer setup, we find a resonant response from which we extract a reduced
effective cyclotron mass. The findings support a non-bolometric mechanism of
the induced photo voltage and the proposed edge-channel diode model.Comment: 5 pages, 5 eps-figures, accepted for Phys. Rev.
Spectroscopy of nanoscopic semiconductor rings
Making use of self-assembly techniques, we demonstrate the realization of
nanoscopic semiconductor quantum rings in which the electronic states are in
the true quantum limit. We employ two complementary spectroscopic techniques to
investigate both the ground states and the excitations of these rings. Applying
a magnetic field perpendicular to the plane of the rings, we find that when
approximately one flux quantum threads the interior of each ring, a change in
the ground state from angular momentum to takes place.
This ground state transition is revealed both by a drastic modification of the
excitation spectrum and by a change in the magnetic field dispersion of the
single-electron charging energy
Excitation-induced energy shifts in the optical gain spectra of InN quantum dots
A microscopic theory for the optical absorption and gain spectra of InN quantum-dot systems is used to study the combined influence of material properties and interaction-induced effects. Atomistic tight-binding calculations for the single-particle properties of the self-assembled quantum-dot and wetting-layer system are used in conjunction with a many-body description of Coulomb interaction and carrier phonon interaction. We analyze the carrier-density and temperature dependence of strong excitation-induced energy shifts of the dipole-allowed quantum-dot transitions.(C) 2009 American Institute of Physics. (10.1063/1.3213543
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